BCP2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION The BCP2098 is an epitaxial planar type NPN silicon transistor. 4 1 FEATURES 2 3 A Excellent DC Current Gain Characteristics Low Saturation Voltage, Typically VCE(SAT)=0.25V At IC / IB=4A / 0.1A E C B D F G CLASSIFICATION OF hFE (1) H Product-Rank BCP2098-Q BCP2098-R Range 120~270 180~390 K J Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. A B C D E F PACKAGE INFORMATION Package MPQ Leader Size SOT-89 1K 13’ inch L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 REF. G H J K L ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6 V A Collector Current -Continuous IC 5 Collector Current (Pulse) 1 ICP 10 Total Power Dissipation Junction & Storage temperature A PD 0.5(2.0) 2 W TJ, TSTG -55~150 °C Note: 1. Single pulse, PW=10ms. 2. When mounted on a 40*40*0.7mm ceramic board. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown V(BR)CBO 50 - - V IC=50μA, IE=0 V(BR)CEO 20 - - V IC=1mA, IB=0 - V IE=50μA, IC=0 0.5 μA VCB=40V, IE=0 μA V(BR)EBO 6 - Collector cut-off current ICBO - - Emitter cut-off current IEBO - - 0.5 DC current gain hFE 120 - 390 VCE(sat) - 0.25 1 Emitter-base breakdown voltage Collector-emitter saturation voltage1 Test Conditions VEB=5V, IC=0 VCE=2V, IC=0.5A V Transition frequency fT - 150 - MHz Output Capacitance COB - 30 - pF IC=4A, IB=0.1A VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0, f=1MHz Note: 1. Measured under pulse condition. Pulse width≦300s, Duty Cycle≦2%. http://www.SeCoSGmbH.com/ 19-May-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 2 BCP2098 Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 19-May-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 2