SECOS BCP2098

BCP2098
NPN Silicon
Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
DESCRIPTION
The BCP2098 is an epitaxial planar type NPN silicon transistor.
4
1
FEATURES


2
3
A
Excellent DC Current Gain Characteristics
Low Saturation Voltage, Typically VCE(SAT)=0.25V
At IC / IB=4A / 0.1A
E
C
B
D
F
G
CLASSIFICATION OF hFE (1)
H
Product-Rank
BCP2098-Q
BCP2098-R
Range
120~270
180~390
K
J
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
0.89
1.20
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-89
1K
13’ inch
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
REF.
G
H
J
K
L
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
6
V
A
Collector Current -Continuous
IC
5
Collector Current (Pulse) 1
ICP
10
Total Power Dissipation
Junction & Storage temperature
A
PD
0.5(2.0)
2
W
TJ, TSTG
-55~150
°C
Note:
1. Single pulse, PW=10ms.
2. When mounted on a 40*40*0.7mm ceramic board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameters
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter
breakdown
V(BR)CBO
50
-
-
V
IC=50μA, IE=0
V(BR)CEO
20
-
-
V
IC=1mA, IB=0
-
V
IE=50μA, IC=0
0.5
μA
VCB=40V, IE=0
μA
V(BR)EBO
6
-
Collector cut-off current
ICBO
-
-
Emitter cut-off current
IEBO
-
-
0.5
DC current gain
hFE
120
-
390
VCE(sat)
-
0.25
1
Emitter-base breakdown voltage
Collector-emitter saturation voltage1
Test Conditions
VEB=5V, IC=0
VCE=2V, IC=0.5A
V
Transition frequency
fT
-
150
-
MHz
Output Capacitance
COB
-
30
-
pF
IC=4A, IB=0.1A
VCE=6V, IC=50mA,
f=100MHz
VCB=20V, IE=0, f=1MHz
Note:
1. Measured under pulse condition. Pulse width≦300s, Duty Cycle≦2%.
http://www.SeCoSGmbH.com/
19-May-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2
BCP2098
Elektronische Bauelemente
NPN Silicon
Epitaxial Planar Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
19-May-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2