MITSUBISHI BCR08AM-14

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AM-14
LOW POWER USE
PLANAR PASSIVATION TYPE
BCR08AM-14
OUTLINE DRAWING
Dimensions in mm
φ 5.0 MAX.
VOLTAGE
CLASS
TYPE
NAME
➁
➂
12.5 MIN.
➀ T1 TERMINAL
➁ T2 TERMINAL
➂ GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ 0.7
1.3
1.25 1.25
➀ ➂ ➁
............................................................... 0.8A
................................................................. 700V
● IFGT ! , IRGT ! , IRGT # ....................................... 5mA
3.9 MAX.
➀
5.0 MAX.
4.4
● IT (RMS)
● VDRM
JEDEC : TO-92
APPLICATION
Contactless AC switches, heating, refrigerator, washing machine, electric fan,
vending machines, trigger circuit for low and medium triac, solid state relay,
other general purpose control applications
MAXIMUM RATINGS
Symbol
V DRM
V DSM
Voltage class
Parameter
Repetitive peak off-state
Non-repetitive peak off-state voltage✽1
Symbol
Unit
14
voltage✽1
V
700
840
Parameter
V
Conditions
Ratings
Unit
I T (RMS)
I TSM
RMS on-state current
Surge on-state current
Commercial frequency, sine full wave 360° conduction, Tc=67°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
0.8
8
A
A
I 2t
I 2t for fusing
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
PGM
Peak gate power dissipation
PG (AV)
VGM
Average gate power dissipation
Peak gate voltage
I GM
Tj
Peak gate current
Junction temperature
T stg
—
Storage temperature
Weight
Typical value
0.26
A2s
1
0.1
W
W
6
V
1
–40 ~ +125
A
°C
–40 ~ +125
0.23
°C
g
✽1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AM-14
LOW POWER USE
PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Limits
Test conditions
Min.
—
Typ.
—
Max.
1.0
Unit
I DRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
V TM
V FGT !
On-state voltage
Tc=25°C, ITM=1.2A, Instantaneous measurement
—
—
—
—
2.0
2.0
V RGT !
V RGT #
Gate trigger voltage
Tj=25°C, VD=6V, RL=6Ω, RG =330Ω
—
—
—
—
2.0
2.0
—
—
5
—
—
—
—
5
5
0.1
—
—
—
—
50
°C/ W
✽2
—
—
V/µs
!
@
#
I FGT !
I RGT !
Gate trigger current
I RGT #
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
Rth (j-c)
Thermal resistance
Junction to case ✽3
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
!
@
Tj=25°C, VD=6V, RL=6Ω, RG =330Ω
#
mA
V
V
V
V
mA
mA
mA
V
✽2. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
Voltage
class
(dv/dt)c
VDRM
(V)
Min.
Commutating voltage and current waveforms
(inductive load)
Test conditions
Unit
SUPPLY
VOLTAGE
1. Junction temperature
Tj=125°C
14
700
0.5
V/µs
2. Rate of decay of on-state commutating
current
(di/dt) c=–0.4A/ms
TIME
(di/dt)c
MAIN
CURRENT
TIME
MAIN
VOLTAGE
(dv/dt)c
3. Peak off-state voltage
VD=400V
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
RATED SURGE ON-STATE
CURRENT
10
3
2
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
101
7
5
Tj = 25°C
100
7
5
3
2
10–1
7
5
3
1.5
2.0
2.5
3.0
3.5
4.0
ON-STATE VOLTAGE (V)
5.0
8
6
4
2
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999