MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING BCR16PM Dimensions in mm 10.5 MAX 2.8 8.5 17 5.0 1.2 5.2 TYPE NAME φ3.2±0.2 VOLTAGE CLASS 13.5 MIN 3.6 1.3 MAX 0.8 2.54 IT (RMS) ...................................................................... 16A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) ✽5 Viso ........................................................................ 1500V UL Recognized: File No. E80276 123 0.5 4.5 • • • • • 2.54 2.6 ∗ Measurement point of case temperature 2 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Contactless AC switches, light dimmer, electric flasher unit, hair drier, control of household equipment such as TV sets · refrigerator · washing machine · electric fan, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VDRM Repetitive peak off-state voltage ✽1 400 600 V VDSM Non-repetitive peak off-state voltage ✽1 500 720 V Symbol Conditions Parameter Ratings Unit IT (RMS) RMS on-state current Commercial power frequency, sine full wave 360° conduction, Tc=71°C ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VGM Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Storage temperature Tstg — Viso for fusing Weight Typical value Isolation voltage Ta=25°C, AC 1 minute, T 1 · T2 · G terminal to case 16 A 160 A 107.5 A2s A –40 ~ +125 °C –40 ~ +125 °C 2.0 g 1500 V ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Limits Test conditions Parameter Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=25A, Instantaneous measurement — — 1.5 V — — 1.5 V — — 1.5 V 1.5 ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω VRGT # # — — IFGT ! ! — — 30 ✽5 mA — — 30 ✽5 mA — — 30 ✽5 mA 0.2 — — V — — 3.0 °C/ W ✽3 — — V/µs IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM R th (j-c) Thermal resistance Junction to case ✽4 (dv/dt) c Critical-rate of rise of off-state commutating voltage V ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. ✽4. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W. ✽5. High sensitivity (I GT≤20mA) is also available. (IGT item 1) Voltage class VDRM (V) 8 400 (dv/dt) c Symbol Min. R — SUPPLY VOLTAGE 1. Junction temperature Tj =125°C L 10 V/µs R 12 Commutating voltage and current waveforms (inductive load) Test conditions Unit — 2. Rate of decay of on-state commutating current (di/dt)c=–8A/ms 3. Peak off-state voltage VD =400V 600 L TIME MAIN CURRENT (di/dt)c TIME MAIN VOLTAGE TIME (dv/dt)c 10 VD PERFORMANCE CURVES 103 7 5 3 2 102 7 5 3 2 RATED SURGE ON-STATE CURRENT 200 Tj = 125°C Tj = 25°C 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 101 7 5 3 VGT = 1.5V 2 PG(AV) = 0.5W PGM = 5W IGM = 2A 100 7 5 3 2 IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) 3 2 VGM = 10V 100 (%) GATE CHARACTERISTICS 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III 102 7 5 4 3 2 IFGT I, IRGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 102 2 3 5 7 103 2 3 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TEMPERATURE (°C) 103 7 5 3 2 NO FINS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 40 35 30 360° CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 40 20 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 103 7 5 3 2 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) JUNCTION TEMPERATURE (°C) 103 7 5 3 2 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, T2+, G– TYPICAL EXAMPLE DISTRIBUTION 102 7 5 3 2 T2 , G TYPICAL T2– , G– EXAMPLE –40 60 RMS ON-STATE CURRENT (A) 104 7 5 3 2 100 80 RMS ON-STATE CURRENT (A) 105 7 TYPICAL EXAMPLE 5 3 2 101 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 0 BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) LACHING CURRENT (mA) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) 100 (%) CASE TEMPERATURE (°C) 160 AMBIENT TEMPERATURE (°C) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT + + 0 40 80 120 JUNCTION TEMPERATURE (°C) 160 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16PM MEDIUM POWER USE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 140 I QUADRANT 120 III QUADRANT 100 80 #1 #2 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 100 (%) INSULATED TYPE, PLANAR PASSIVATION TYPE COMMUTATION CHARACTERISTICS 100 (%) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 103 7 5 4 3 2 t VD (dv/dt)C CURRENT WAVEFORM (di/dt)C IT τ t 101 I QUADRANT 7 5 3 MINIMUM 2 CHARACIII QUADRANT 100 TERISTICS 7 VALUE 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH VOLTAGE WAVEFORM 3 TYPICAL 2 EXAMPLE 102 Tj = 125°C 7 IT = 4A 5 τ = 500µs 3 VD = 200V 2 f = 3Hz RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω TYPICAL EXAMPLE IFGT I IRGT I A 6V IRGT III V TEST PROCEDURE 1 102 7 5 4 3 2 A 6V RG V RG TEST PROCEDURE 2 6Ω A 6V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) V RG TEST PROCEDURE 3 Feb.1999