MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CS Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR16CS OUTLINE DRAWING 4 Dimensions in mm ∗ 1.3 VOLTAGE CLASS +0.3 0 –0 (1.5) 3.0 –0.5 +0.3 1.5 MAX 8.6±0.3 9.8±0.5 TYPE NAME 4.5 1.5 MAX 10.5 MAX 1 5 0.5 1 2 3 24 • IT (RMS) ...................................................................... 16A • VDRM ....................................................................... 600V • IFGT !, IRGT !, IRGT # ............................................ 20mA 1 1 2 3 3 4 2.6±0.4 4.5 0.8 ∗ Measurement point of case temperature T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220S APPLICATION Contactless AC switches , light dimmer, electric flasher unit, hair drier, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage ✽1 600 V VDSM Non-repetitive peak off-state voltage ✽1 720 V Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=100°C ✽3 ITSM Surge on-state current I2t I2t for fusing PGM Peak gate power dissipation 5 W PG (AV) Average gate power dissipation 0.5 W VGM Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Tstg 16 A 60Hz sinewave 1 full cycle, peak value, non-repetitive 170 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 121 A2s Storage temperature — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 1.2 g ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CS MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=25A, Instantaneous measurement — — 1.5 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 20 mA — — 20 mA — — 20 mA IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V Rth (j-c) Thermal resistance Junction to case ✽3 ✽4 — — 1.4 °C/ W (dv/dt)c Critical-rate of rise of off-state commutating voltage Tj=125°C 10 — — V/µs ✽5 ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. Case temperature is measured on the T2 terminal. ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. ✽5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125°C MAIN CURRENT 2. Rate of decay of on-state commutating current (di/dt)c=–8.0A/ms TIME (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD=400V TIME (dv/dt)c VD PERFORMANCE CURVES 102 7 5 3 2 RATED SURGE ON-STATE CURRENT 200 Tj = 125°C Tj = 25°C 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 103 7 5 3 2 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CS Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE PG(AV) = 0.5W PGM = 5W 101 7 5 3 VGT = 1.5V 2 IGM = 2A 100 7 5 3 2 IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) 3 2 VGM = 10V 100 (%) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 103 7 5 4 3 2 102 7 5 4 3 2 MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) TRANSIENT THERMAL IMPEDANCE (°C/W) 101 –60 –40 –20 0 20 40 60 80 100 120 140 102 2 3 5 7 103 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (°C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 40 160 35 140 30 360° CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) CASE TEMPERATURE (°C) 100 (%) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) ON-STATE POWER DISSIPATION (W) 102 7 5 4 3 2 IFGT I, IRGT I JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE IRGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) 103 7 5 4 3 2 TYPICAL EXAMPLE CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CS MEDIUM POWER USE 120 120 120 t2.3 100 100 100 t2.3 80 60 60 t2.3 60 40 20 2 4 6 60 40 20 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 104 7 5 3 2 103 7 5 3 2 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 3 2 DISTRIBUTION + – T2 , G TYPICAL EXAMPLE 102 7 5 3 2 100 –40 80 RMS ON-STATE CURRENT (A) 105 7 TYPICAL EXAMPLE 5 3 2 101 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 0 8 10 12 14 16 18 20 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) 100 (%) 0 AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE COPPER 140 AND ALUMINUM 0 LACHING CURRENT (mA) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) AMBIENT TEMPERATURE (°C) Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C T2 , G TYPICAL T2– , G– EXAMPLE + + 0 40 80 120 JUNCTION TEMPERATURE (°C) 160 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CS BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 140 120 III QUADRANT 100 80 60 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 100 (%) Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C COMMUTATION CHARACTERISTICS 7 SUPPLY TYPICAL TIME VOLTAGE 5 EXAMPLE (di/dt)c MAIN CURRENT TIME MAIN 3 Tj = 125°C VOLTAGE TIME 2 IT = 4A VD (dv/dt)c τ = 500µs VD = 200V 101 f = 3Hz 7 5 MINIMUM I QUADRANT 3 CHARAC2 TERISTICS VALUE 100 7 0 10 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 TYPICAL EXAMPLE III QUADRANT 2 3 5 7 101 2 3 5 7 102 2 3 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω IFGT I IRGT I IRGT III A 6V V 102 7 5 4 3 2 A 6V RG TEST PROCEDURE 1 V RG TEST PROCEDURE 2 6Ω 101 0 10 A 6V 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) V RG TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CS The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR16CS OUTLINE DRAWING 4 Dimensions in mm ∗ 1.3 VOLTAGE CLASS +0.3 0 –0 (1.5) 3.0 –0.5 +0.3 1.5 MAX 8.6±0.3 9.8±0.5 TYPE NAME 4.5 1.5 MAX 10.5 MAX 1 5 0.5 1 2 3 24 • IT (RMS) ...................................................................... 16A • VDRM ....................................................................... 600V • IFGT !, IRGT !, IRGT # ............................................ 20mA 1 1 2 3 3 4 2.6±0.4 4.5 0.8 ∗ Measurement point of case temperature T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220S APPLICATION Contactless AC switches , light dimmer, electric flasher unit, hair drier, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage ✽1 600 V VDSM Non-repetitive peak off-state voltage ✽1 720 V Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=125°C ✽3 ITSM Surge on-state current I2t I2t for fusing PGM Peak gate power dissipation 5 W PG (AV) Average gate power dissipation 0.5 W VGM Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Tstg 16 A 60Hz sinewave 1 full cycle, peak value, non-repetitive 170 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 121 A2s Storage temperature — Weight Typical value A –40 ~ +150 °C –40 ~ +150 °C 1.2 g ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CS MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=150°C, VDRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=25A, Instantaneous measurement — — 1.5 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 20 mA — — 20 mA — — 20 mA 0.2/0.1 — — V — — 1.4 °C/ W 10/1 — — V/µs IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C/150°C, VD=1/2VDRM Rth (j-c) Thermal resistance Junction to case ✽3 ✽4 (dv/dt)c Critical-rate of rise of off-state commutating voltage ✽5 Tj=125°C/150°C ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. Case temperature is measured on the T2 terminal. ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. ✽5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125°C/150°C MAIN CURRENT 2. Rate of decay of on-state commutating current (di/dt)c=–8.0A/ms TIME (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD=400V TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT 200 102 7 5 3 2 Tj = 150°C 101 7 5 3 2 100 0.5 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 103 7 5 3 2 Tj = 25°C 1.0 1.5 2.0 2.5 3.0 3.5 ON-STATE VOLTAGE (V) 4.0 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CS MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE PG(AV) = 0.5W PGM = 5W 101 7 5 3 VGT = 1.5V 2 IGM = 2A 100 7 5 3 2 10–1 7 IFGT I, IRGT I, IRGT III VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) 3 2 VGM = 10V 100 (%) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 103 7 5 4 3 2 102 7 5 4 3 2 MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) TRANSIENT THERMAL IMPEDANCE (°C/W) 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 102 2 3 5 7 103 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (°C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 40 160 35 140 30 360° CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) CASE TEMPERATURE (°C) 100 (%) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) ON-STATE POWER DISSIPATION (W) 102 7 5 4 3 2 IFGT I, IRGT I JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE IRGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) 103 7 5 4 3 2 TYPICAL EXAMPLE CURVES APPLY 120 REGARDLESS OF CONDUCTION ANGLE 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CS MEDIUM POWER USE 120 120 t2.3 100 100 t2.3 100 60 60 t2.3 80 60 40 CURVES APPLY REGARDLESS 20 OF CONDUCTION ANGLE 0 0 2 4 6 8 10 12 14 16 18 20 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 100 (%) RMS ON-STATE CURRENT (A) 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE DISTRIBUTION + 100 (%) JUNCTION TEMPERATURE (°C) 103 7 5 3 2 – T2 , G TYPICAL EXAMPLE 102 7 5 3 2 100 –40 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS 120 OF CONDUCTION ANGLE RESISTIVE, 100 INDUCTIVE LOADS 80 RMS ON-STATE CURRENT (A) 5 3 TYPICAL EXAMPLE 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140160 101 7 5 3 2 AMBIENT TEMPERATURE (°C) 120 BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) LACHING CURRENT (mA) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE COPPER AND ALUMINUM 140 100 (%) AMBIENT TEMPERATURE (°C) The product guaranteed maximum junction temperature 150°C (See warning.) T2 , G TYPICAL T2– , G– EXAMPLE + + 0 40 80 120 JUNCTION TEMPERATURE (°C) 160 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CS MEDIUM POWER USE TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 III QUADRANT 100 80 60 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 100 (%) 160 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150°C) 160 TYPICAL EXAMPLE Tj = 150°C 140 BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125°C) 140 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 120 100 III QUADRANT 80 60 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) COMMUTATION CHARACTERISTICS (Tj = 125°C) COMMUTATION CHARACTERISTICS (Tj = 150°C) 102 7 5 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c 3 2 (di/dt)c TIME TIME VD 101 7 MINIMUM 5 CHARACTERISTICS 3 VALUE 2 100 7 5 7 101 3 TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz TIME III QUADRANT I QUADRANT 5 7 102 2 3 2 3 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 100 (%) The product guaranteed maximum junction temperature 150°C (See warning.) 102 7 5 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c 3 2 101 7 5 TIME (di/dt)c TIME TIME VD TYPICAL EXAMPLE Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz I QUADRANT 3 MINIMUM 2 CHARAC- III QUADRANT TERISTICS VALUE 100 7 3 5 7 101 2 3 5 7 102 2 3 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 TYPICAL EXAMPLE IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16CS MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC 6Ω A 6V TEST PROCEDURE 1 6Ω LOAD A 6V RG V V RG TEST PROCEDURE 2 C1 R1 C1 = 0.1~0.47µF R1 = 47~100Ω C0 R0 C0 = 0.1µF R0 = 100Ω A 6V V RG TEST PROCEDURE 3 Mar. 2002