MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR30GM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE BCR30GM OUTLINE DRAWING 2 Dimensions in mm 39.2 MAX 20.2 MAX 2-φ4.2 23.0MAX 5.0 MIN 3 IT (RMS) ...................................................................... 30A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ........................................... 50mA Viso ........................................................................ 2200V UL Recognized: File No. E80276 GATE TERMINAL INDICATION TRADEMARK 2.6 • • • • • 1.5 3-φ1.3 ∗ TYPE NAME 22.5 MAX T1 TERMINAL INDICATION 7.95 φ2.0(T1,T2) 9.75 7.0 7.0 8.25 6.35 3 1 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL φ1.55(G) 11 MAX 1 2 6.35 20.1 MAX 21.6 MAX 30.0±0.2 LOT No. VOLTAGE CLASS Tb TEST POINT BCR30GM (C TYPE) APPLICATION Contactless AC switches, light dimmer, on/off and speed control of small induction motors, on/off control of copier lamps, microwave ovens MAXIMUM RATINGS Symbol Voltage class Parameter voltage ✽1 VDRM Repetitive peak off-state VDSM Non-repetitive peak off-state voltage ✽1 Symbol 12 400 600 V 500 720 V Conditions Parameter Unit 8 IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tb=60°C ITSM Surge on-state current I2t I2t for fusing PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM Ratings Unit 30 A 60Hz sinewave 1 full cycle, peak value, non-repetitive 300 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 375 A2s 5 W 0.5 W Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature –40 ~ +125 Tstg Storage temperature –40 ~ +125 Viso — Mounting torque Screw M4 — Weight Typical value Isolation voltage Ta=25°C, AC 1 minute, T 2 · T1 · G terminal to base A °C °C 15 kg·cm 1.47 N·cm 26 g 2200 V ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR30GM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Limits Test conditions Parameter Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 3.0 mA VTM On-state voltage Tb=25°C, I TM=45A, Instantaneous measurement — — 1.6 V — — 2.5 V — — 2.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω VRGT # # — — 2.5 V IFGT ! ! — — 50 mA — — 50 mA — — 50 mA 0.2 — — V — — 1.6 °C/ W ✽3 — — V/µs IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM R th (j-b) Thermal resistance Junction to base ✽4 (dv/dt) c Critical-rate of rise of off-state commutating voltage ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. ✽4. The contact thermal resistance R th (b-f) in case of greasing is 0.5°C/W. Voltage class VDRM (V) 8 (dv/dt) c Symbol Min. R — SUPPLY VOLTAGE 1. Junction temperature Tj =125°C 400 L 20 V/µs R 12 Commutating voltage and current waveforms (inductive load) Test conditions Unit — 2. Rate of decay of on-state commutating current (di/dt)c=–16A/ms L MAIN CURRENT (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD =400V 600 TIME TIME (dv/dt)c 20 VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 7 5 3 2 500 TC = 25°C 102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 103 400 300 200 100 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR30GM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 102 7 5 3 2 VGM = 10V 101 7 5 VGT = 2.5V 3 2 PG(AV) = 0.5W PGM = 5W IGM = 2A 100 7 5 3 2 IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) GATE CHARACTERISTICS 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) TYPICAL EXAMPLE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 50 160 40 360° CONDUCTION 30 RESISTIVE, INDUCTIVE LOADS 20 10 0 102 2 3 5 7 103 2.0 JUNCTION TEMPERATURE (°C) CASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 0 TYPICAL EXAMPLE 10 20 30 40 RMS ON-STATE CURRENT (A) 50 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 40 RESISTIVE, 20 INDUCTIVE LOADS 0 0 10 20 30 40 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR30GM MEDIUM POWER USE CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 60 40 20 10 20 30 40 100 (%) 100 (%) 105 7 5 3 2 TYPICAL EXAMPLE 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE 102 7 5 4 3 2 101 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 –60–40 –20 0 20 40 60 80 100 120 140 0 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE RMS ON-STATE CURRENT (A) 100 (%) 103 7 5 4 3 2 0 BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) 100 (%) 160 160 t3.0 80 0 HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 120 120 t3.0 100 REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED 140 ALUMINUM AND GREASED NATURAL CONVECTION 120 80 80 t4.0 TYPICAL EXAMPLE Tj = 125°C 120 100 80 I QUADRANT 60 40 III QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) AMBIENT TEMPERATURE (°C) INSULATED TYPE, GLASS PASSIVATION TYPE COMMUTATION CHARACTERISTICS 102 7 5 4 3 2 101 7 5 4 3 2 TYPICAL EXAMPLE TC = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz MINIMUM CHARACTERISTICS VALUE I QUADRANT III QUADRANT 100 1 10 2 3 4 5 7 102 2 3 4 5 7 103 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR30GM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 6Ω 6Ω TYPICAL EXAMPLE IFGT I A 6V IRGT I V A 6V RG V RG IRGT III TEST PROCEDURE 1 102 7 5 4 3 2 TEST PROCEDURE 2 6Ω A 6V V 101 0 10 2 3 4 5 7 101 RG 2 3 4 5 7 102 TEST PROCEDURE 3 GATE CURRENT PULSE WIDTH (µs) Feb.1999