MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16HM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE BCR16HM OUTLINE DRAWING 2 Dimensions in mm 39.2 MAX 20.2 MAX 2-φ4.2 23.0MAX 5.0 MIN 3 IT (RMS) ...................................................................... 16A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ........................................... 30mA Viso ........................................................................ 2200V UL Recognized: File No. E80276 GATE TERMINAL INDICATION TRADEMARK 2.6 • • • • • 1.5 3-φ1.3 ∗ TYPE NAME 22.5 MAX T1 TERMINAL INDICATION 7.95 φ2.0(T1,T2) 9.75 7.0 7.0 8.25 6.35 3 1 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL φ1.55(G) 11 MAX 1 2 6.35 20.1 MAX 21.6 MAX 30.0±0.2 LOT No. VOLTAGE CLASS Tb TEST POINT BCR16HM (C TYPE) APPLICATION Contactless AC switches, light dimmer, on/off and speed control of small induction motors, on/off control of copier lamps, microwave ovens MAXIMUM RATINGS Symbol Voltage class Parameter voltage ✽1 VDRM Repetitive peak off-state VDSM Non-repetitive peak off-state voltage ✽1 Symbol 12 400 600 V 500 720 V Conditions Parameter Unit 8 IT (RMS) RMS on-state current Commercial frequency, sine full wave, 360° conduction, Tb=82°C ITSM Surge on-state current I2t I2t for fusing PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM Ratings Unit 16 A 60Hz sinewave 1 full cycle, peak value, non-repetitive 170 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 121 A2s 5 W 0.5 W Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature –40 ~ +125 Tstg Storage temperature –40 ~ +125 — Mounting torque — Weight Viso Isolation voltage Screw M4 Ta=25°C, AC 1 minute, T 2 · T1 · G terminal to base 15 1.47 A °C °C kg·cm N·m 26 g 2200 V ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16HM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Limits Test conditions Parameter Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 3.0 mA VTM On-state voltage Tb=25°C, I TM=25A, Instantaneous measurement — — 1.6 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 30 mA — — 30 mA — — 30 mA 0.2 — — V — — 2.0 °C/ W ✽3 — — V/µs IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM R th (j-b) Thermal resistance Junction to base ✽4 (dv/dt) c Critical-rate of rise of off-state commutating voltage ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. ✽4. The contact thermal resistance R th (b-f) in case of greasing is 0.5°C/W. Voltage class VDRM (V) 8 (dv/dt) c Symbol Min. R — SUPPLY VOLTAGE 1. Junction temperature Tj =125°C 400 L 10 V/µs R 12 Commutating voltage and current waveforms (inductive load) Test conditions Unit — 2. Rate of decay of on-state commutating current (di/dt)c=–8A/ms L MAIN CURRENT (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD =400V 600 TIME TIME (dv/dt)c 10 VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 7 5 3 2 Tb = 25°C 102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 103 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16HM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 102 7 5 3 2 VGM = 10V 101 7 5 3 2 PG(AV) = 0.5W VGT = 1.5V PGM = 5W IGM = 2A 100 7 5 3 2 IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) GATE CHARACTERISTICS 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) TYPICAL EXAMPLE 102 2 3 5 7 103 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (°C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE BASE TEMPERATURE VS. RMS ON-STATE CURRENT 40 160 35 140 30 360° CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) BASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16HM MEDIUM POWER USE 120 120 t3.0 80 80 t2.0 80 60 40 CURVES APPLY 20 REGARDLESS OF CONDUCTION ANGLE 0 0 2 4 6 8 10 12 14 16 18 20 103 7 5 4 3 2 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 RMS ON-STATE CURRENT (A) JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 100 (%) 100 REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED 140 ALUMINUM AND GREASED NATURAL CONVECTION 120 160 160 t4.0 BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 100 (%) AMBIENT TEMPERATURE (°C) INSULATED TYPE, GLASS PASSIVATION TYPE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 140 120 TYPICAL EXAMPLE Tj = 125°C I QUADRANT III QUADRANT 100 80 #1 #2 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 100 (%) JUNCTION TEMPERATURE (°C) COMMUTATION CHARACTERISTICS 102 7 5 4 3 2 101 7 5 4 3 2 TYPICAL EXAMPLE TC = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz MINIMUM CHARACTERISTICS VALUE 100 0 10 III QUADRANT I QUADRANT 2 3 4 5 7 101 2 3 4 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16HM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 103 7 5 4 3 2 6Ω TYPICAL EXAMPLE IFGT I A 6V IRGT I V IRGT III TEST PROCEDURE 1 102 7 5 4 3 2 V RG TEST PROCEDURE 2 6Ω A 6V 101 A 6V RG 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) V RG TEST PROCEDURE 3 Feb.1999