MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING BCR3AS Dimensions in mm 6.5 ∗ 2.3 MIN 1.0 MAX 0.9 MAX 5.5±0.2 TYPE NAME 1.0 2.3 10 MAX 4 VOLTAGE CLASS 0.5±0.1 1.5±0.2 5.0±0.2 0.5±0.2 2.3 0.8 2.3 ∗ Measurement point of case temperature 1 2 3 24 • IT (RMS) ........................................................................ 3A • VDRM ..............................................................400V/600V • IFGT !, IRGT !, IRGT # ......................... 15mA (10mA) ✽2 1 1 2 3 3 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL MP-3 APPLICATION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VDRM Repetitive peak off-state voltage ✽1 400 600 V VDSM Non-repetitive peak off-state voltage ✽1 500 720 V Conditions Parameter Symbol IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc =108°C ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM Ratings Unit 3 A 30 A 3.7 A2s 3 W 0.3 W Peak gate voltage 6 V IGM Peak gate current 0.3 A Tj Junction temperature –40 ~ +125 °C –40 ~ +125 °C 0.26 g Storage temperature Tstg — Weight Typical value ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=4.5A, Instantaneous measurement — — 1.7 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 IFGT ! ! — — 15 ✽2 mA — — 15 ✽2 mA — — 15 ✽2 mA IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # IRGT # V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V Rth (j-c) Thermal resistance Junction to case ✽4 — — 3.8 °C/ W (dv/dt)c Critical-rate of rise of off-state commutating voltage ✽3 — — V/µs ✽2. High sensitivity (IGT≤10mA) is also available. ✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. ✽4. Case temperature is measured on the T2 terminal. Voltage class VDRM (V) 8 400 (dv/dt) c Min. SUPPLY VOLTAGE 1. Junction temperature Tj=125°C 5 12 Commutating voltage and current waveforms (inductive load) Test conditions Unit V/µs 600 TIME 2. Rate of decay of on-state commutating current (di/dt)c=–1.5A/ms MAIN CURRENT 3. Peak off-state voltage VD=400V MAIN VOLTAGE (di/dt)c TIME TIME (dv/dt)c VD PERFORMANCE CURVES TC = 25°C 101 7 5 3 2 100 7 5 3 2 10–1 RATED SURGE ON-STATE CURRENT 40 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 102 7 5 3 2 0 1 2 3 4 ON-STATE VOLTAGE (V) 5 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) PGM = 3W 101 7 5 3 2 IGM = 0.5A PG(AV) = 0.3W 100 7 5 3 2 IFGT I, IRGT III IRGT I TYPICAL EXAMPLE IRGT III 102 IFGT I, IRGT I 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (°C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 10 160 8 360° CONDUCTION 6 RESISTIVE, INDUCTIVE LOADS 4 2 0 103 7 5 4 3 2 GATE CURRENT (mA) CASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) VGD = 0.2V 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 102 7 5 3 2 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) GATE CHARACTERISTICS 0 1 2 3 4 RMS ON-STATE CURRENT (A) 5 CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3AS LOW POWER USE 80 60 40 20 HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 100 (%) 0 103 7 5 4 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE LACHING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE 102 7 5 4 3 2 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 T2+, G– TYPICAL EXAMPLE ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION T2+, G+ TYPICAL – – T2 , G EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE 100 (%) JUNCTION TEMPERATURE (°C) 140 160 TYPICAL EXAMPLE Tj = 125°C 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 100 (%) 105 7 TYPICAL EXAMPLE 5 3 2 RMS ON-STATE CURRENT (A) 101 –60 –40 –20 0 20 40 60 80 100 120 140 BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 LACHING CURRENT (mA) AMBIENT TEMPERATURE (°C) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 120 100 80 60 40 III QUADRANT 20 I QUADRANT 0 1 2 10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3AS LOW POWER USE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 102 VOLTAGE WAVEFORM 7 t 5 (dv/dt)C VD 4 3 CURRENT WAVEFORM (di/dt)C 2 IT τ t 101 7 5 4 3 MINIMUM 2 CHARAC- TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz I QUADRANT III QUADRANT TERISTICS VALUE 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) 100 (%) COMMUTATION CHARACTERISTICS GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III IRGT I IFGT I 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω A 6V A 6V RG V TEST PROCEDURE 1 V RG TEST PROCEDURE 2 6Ω A 6V V RG TEST PROCEDURE 3 Feb.1999