BCR101... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ ) BCR101F/L3 BCR101T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration Package BCR101F* UCs 1=B 2=E 3=C - - - TSFP-3 BCR101L3* UC 1=B 2=E 3=C - - - TSLP-3-4 BCR101T* UCs 1=B 2=E 3=C - - - SC75 *Preliminary Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on voltage Vi(on) 50 Collector current IC 50 Total power dissipation- Ptot 250 BCR101L3, TS ≤ 135°C 250 BCR101T, TS ≤ 109°C 250 Tj Storage temperature Tstg 1 V mA mW BCR101F, TS ≤ 128°C Junction temperature Unit 150 °C -65 ... 150 Nov-27-2003 BCR101... Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value BCR101F ≤ 90 BCR101L3 ≤ 60 BCR101T ≤ 165 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage 50 - - I CBO - - 100 nA I EBO - - 75 µA h FE 70 - - - - - 0.3 V Vi(off) 0.5 - 1.8 Vi(on) 1 - 3 Input resistor R1 70 100 130 kΩ Resistor ratio R1/R 2 0.9 1 1.1 - fT - 100 - MHz Ccb - 3 - pF V(BR)CBO IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) VCEsat IC = 5 mA, IB = 0.25 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 1 mA, VCE = 0.3 V AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1For calculation of R thJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% 2 Nov-27-2003 BCR101... DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 3 10 -1 A IC h FE 10 -2 10 2 10 -3 10 1 -4 10 10 -3 10 -2 A 10 10 -4 0 -1 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 IC V 0.5 VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 -2 A A 10 -2 10 -3 IC IC 10 -1 10 -3 10 -4 10 -4 10 -5 10 -5 -1 10 10 0 10 1 V 10 10 -6 0.5 2 Vi(on) 1 1.5 2 2.5 3 V 4 Vi(off) 3 Nov-27-2003 BCR101... Total power dissipation Ptot = ƒ(TS) BCR101F Total power dissipation Ptot = ƒ(TS) BCR101L3 300 300 mW 200 P tot P tot mW 200 150 150 100 100 50 50 0 0 20 40 60 80 100 120 °C 0 0 150 20 40 60 80 120 °C 100 TS Total power dissipation Ptot = ƒ(TS) BCR101T Permissible Puls Load R thJS = ƒ (tp) BCR101F 10 2 300 K/W RthJS mW Ptot 150 TS 200 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 150 10 0 100 50 0 0 20 40 60 80 100 120 °C 10 -1 -6 10 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Nov-27-2003 BCR101... Permissible Puls Load R thJS = ƒ (tp) BCR101L3 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR101F 10 2 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 RthJS P totmax/P totDC 10 3 10 -5 10 -4 10 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -3 10 -2 s 10 10 -1 -7 10 0 10 -6 10 -5 10 -4 10 -3 10 tp -2 s 10 0 10 0 tp Permissible Puls Load R thJS = ƒ (tp) BCR101T Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR101L3 10 3 10 3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 RthJS Ptotmax/ PtotDC K/W 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 5 Nov-27-2003 BCR101... Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR101T P totmax / P totDC 10 3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 Nov-27-2003