ZETEX BCX19R

SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS –
BCX19 BCX19R -
COMPLEMENTARY TYPES -
BCX19
U1
U4
E
C
BCX17
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
V CES
50
V
Collector-Emitter Voltage
V CEO
45
V
Emitter-Base Voltage
V EBO
5
V
Peak Pulse Current
I CM
1000
mA
Continuous Collector Current
IC
500
mA
Base Current
IB
100
mA
Peak Base Current
I BM
200
mA
Power Dissipation at T amb=25°C
P TOT
330
mW
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Collector-Base Cut-Off
Current
MIN.
TYP.
MAX. UNIT
CONDITIONS.
I CBO
100
200
nA
µA
V CB =20V
V CB =20V, T j=150°C
Emitter-Base Cut-Off
Current
I EBO
10
µA
V EB =5V
Base-Emitter Voltage
V BE
1.2
V
I C =500mA, V CE =1V*
Collector-Emitter
Saturation Voltage
V CE(sat)
620
mV
I C =500mA, I B =50mA*
Static Forward Current
Transfer Ratio
h FE
Transition Frequency
fT
200
MHz
I C =10mA, V CE =5V
f =35MHz
Output Capacitance
C obo
5.0
pF
V CB =10V, f =1MHz
100
70
40
I C =10 0 mA, V CE =1V
I C =300mA, V CE =1V*
I C =500mA, V CE =1V*
600
*Measured under pulsed conditions.
TBA