DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 November 1992 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs FEATURES BF901; BF901R QUICK REFERENCE DATA • Intended for low voltage operation SYMBOL PARAMETER TYP. MAX. UNIT • Short channel transistor with high ratio Yfs :Cis VDS drain-source voltage − 12 V • Low noise gain-controlled amplifier to 1 GHz ID drain current − 30 mA Ptot total power dissipation − 200 mW • BF901R has reverse pinning. DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low voltage operation. These MOS-FET tetrodes are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. Tj junction temperature − 150 °C Yfs transfer admittance 28 35 mS Cig1-s input capacitance at gate 1 2.35 2.75 pF Crs feedback capacitance 25 − fF F noise figure at 800 MHz 1.7 − dB d handbook, halfpage 4 3 g2 g1 1 2 s,b Top view MAM039 PINNING PIN DESCRIPTION 1 source 2 drain 3 gate 2 4 gate 1 Marking code: MO1. Fig.1 Simplified outline (SOT143) and symbol. d handbook, halfpage 3 4 g2 g1 2 1 s,b Top view MAM040 Marking code: MO2. Fig.2 Simplified outline (SOT143R) and symbol. November 1992 2 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs BF901; BF901R LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 12 V VD-G2 drain-gate 2 voltage − 6 V ID DC drain current − 30 mA ±IG1-S gate 1-source current − 10 mA ±IG2-S gate 2-source current − 10 mA Ptot total power dissipation BF901 up to Tamb = 50 °C (note 1) − 200 mW BF901R up to Tamb = 40 °C (note 1) − 200 mW Tstg storage temperature −65 150 °C Tj junction temperature − 150 °C THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER THERMAL RESISTANCE thermal resistance from junction to ambient (note 1) BF901 500 K/W BF901R 550 K/W Note 1. Device mounted on an FR4 printboard. MBB756 240 handbook, halfpage P tot (mW) BF901R BF901 120 0 0 50 100 150 200 Tamb (°C) Fig.3 Power derating curve. November 1992 3 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs BF901; BF901R STATIC CHARACTERISTICS Tj = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ±IG1-SS gate 1 cut-off current ±VG1-S = 5 V; VG2-S = VDS = 0 − 50 nA ±IG2-SS gate 2 cut-off current ±VG2-S = 5 V; VG1-S = VDS = 0 − 50 nA ±V(BR)G1-SS gate 1-source breakdown voltage ±IG1-SS = 10 mA; VG2-S = VDS = 0 6 20 V ±V(BR)G2-SS gate 2-source breakdown voltage ±IG2-SS = 10 mA; VG1-S = VDS = 0 6 20 V VG1-S(th) gate 1-source threshold voltage ID = 20 µA; VDS = 8 V; VG2-S = 4 V 0 0.7 V VG2-S(th) gate 2-source threshold voltage ID = 20 µA; VDS = 8 V; VG1-S = 0 0.3 1 V IDSX drain-source current VDS = 4 V; VG1-S = 1.1 V; VG2-S = 3.4 V 2 18 mA DYNAMIC CHARACTERISTICS Measuring conditions (common source): ID = 14 mA; VDS = 5 V; VG2-S = 4 V; Tamb = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 35 Yfs transfer admittance pulsed; Tj = 25 °C 25 28 mS Cig1-s input capacitance at gate 1 f = 1 MHz − 2.35 2.75 pF Cig2-s input capacitance at gate 2 f = 1 MHz − 1.2 − pF Cos output capacitance f = 1 MHz − 1.4 − pF Crs feedback capacitance f = 1 MHz − 25 − fF F noise figure f = 200 MHz; Gs = 2 mS; Bs = Bsopt. − 0.7 − dB f = 800 MHz; Gs = 3.3 mS; Bs = Bsopt. − 1.7 − dB November 1992 4 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs BF901; BF901R PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.55 0.25 0.45 0.25 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-03-10 SOT143R November 1992 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs BF901; BF901R Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B November 1992 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs BF901; BF901R DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1992 7