INFINEON BFR193L3_07

BFR193L3
NPN Silicon RF Transistor*
• For low noise, high-gain amplifiers up to 2 GHz
• For linear broadband amplifiers
3
• fT = 8 GHz, F = 1 dB at 900 MHz
1
2
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR193L3
Marking
RC
Pin Configuration
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
80
Base current
IB
10
Total power dissipation2)
Ptot
580
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-55 ... 150
Storage temperature
T stg
-55 ... 150
V
mA
TS ≤ 95°C
Thermal Resistance
Parameter
Symbol
Junction - soldering point 3)
RthJS
Value
Unit
tbd
K/W
1Pb-containing
2T
package may be available upon special request
is
measured
on the collector lead at the soldering point to the pcb
S
3For
calculation of RthJA please refer to Application Note Thermal Resistance
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BFR193L3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
70
100
140
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, I B = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, I E = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain-
-
IC = 30 mA, VCE = 8 V, pulse measured
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BFR193L3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
6
8
-
Ccb
-
0.63
0.9
Cce
-
0.22
-
Ceb
-
2.25
-
Unit
GHz
IC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Noise figure
dB
F
IC = 10 mA, VCE = 8 V, Z S = ZSopt ,
f = 900 MHz
-
1
-
-
1.6
-
-
19
-
-
12.5
-
IC = 10 mA, VCE = 8 V, Z S = ZSopt ,
f = 1.8 GHz
Power gain, maximum available1)
G ma
IC = 30 mA, VCE = 8 V, Z S = ZSopt ,
ZL = ZLopt , f = 900 MHz
IC = 30 mA, VCE = 8 V, Z S = ZSopt ,
ZL = ZLopt , f = 1.8 GHz
|S 21e|2
Transducer gain
dB
IC = 30 mA, VCE = 8 V, Z S = ZL = 50Ω ,
f = 900 MHz
-
14.5
-
-
9
-
IC = 30 mA, VCE = 8 V, Z S = ZL = 50Ω ,
f = 1.8 GHz
1/2
ma = |S21 / S12| (k-(k²-1) )
1G
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2007-03-30
BFR193L3
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
0.2738
24
1.935
3.8742
0.94371
1
1.1824
18.828
0.96893
1.1828
1.0037
0
3
fA
V
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
NK =
FC =
V
Ω
fF
ps
mA
V
ns
-
125
0.26949
14.267
0.037925
1.8368
0.76534
0.70276
0.69477
0
0.30002
0
0
0.72063
A
A
Ω
V
deg
fF
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
0.95341
10.627
1.4289
0.037409
0.91763
0.11938
0.48654
0.8
935.03
0.053563
0.75
1.11
300
fA
fA
mA
Ω
V
fF
V
eV
K
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
C4
C7
C1
L2
B
Transistor
Chip
B’
C’
R1
L3
C
E’
C6
C2
L1
C5
C3
L1 =
L2 =
L3 =
C1 =
C2 =
C3 =
C4 =
C5 =
C6 =
C7 =
R1 =
0.575
0.575
0.275
33
28
131
8
8
24
300
204
nH
nH
nH
fF
fF
fF
fF
fF
fF
fF
Ω
Valid up to 6GHz
E
EHA07536
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
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2007-03-30
Package TSLP-3-1
BFR193L3
Package Outline
Bottom view
0.4 +0.1
0.6 ±0.05
0.5 ±0.035
2
1 ±0.05
3
0.65 ±0.05
3
1)
2
1
1)
0.05 MAX.
0.35 ±0.05
Pin 1
marking
2 x 0.15 ±0.035
2 x 0.25 ±0.035
1
0.25 ±0.035
1)
Top view
1)
1) Dimension applies to plated terminal
Foot Print
R0.1
0.2
0.225
0.2
0.225
0.315
0.35
1
0.3
0.945
0.35
0.45
0.275
0.6
0.355
For board assembly information please refer to Infineon website "Packages"
0.17
0.15
Copper
Solder mask
Stencil apertures
Marking Layout (Example)
BFR193L3
Type code
Pin 1 marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
0.5
1.16
Pin 1
marking
8
4
0.76
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2007-03-30
BFR193L3
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
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2007-03-30