PHILIPS BGY925

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D167
BGY925
UHF amplifier module
Product specification
Supersedes data of 1999 Dec 01
2000 Feb 02
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
FEATURES
PINNING - SOT365A
• 26 V nominal supply voltage
PIN
• 23 W output power into a load of 50 Ω with an RF drive
power of 36 mW.
APPLICATIONS
• Base station transmitting equipment operating in the
920 to 960 MHz frequency range.
DESCRIPTION
1
RF input
2
VS1
3
VS2
4
RF output
Flange
ground
DESCRIPTION
The BGY925 is a three-stage UHF amplifier module in a
SOT365A package. It consists of one NPN silicon planar
transistor die and two silicon MOSFET dies mounted on a
metallized ceramic AlN substrate, together with matching
and bias circuitry.
handbook, halfpage
1
2
3
4
MSA447
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
f
(MHz)
VS1, VS2
(V)
PL
(W)
Gp
(dB)
η
(%)
(note 1)
ZS, ZL
(Ω)
920 to 960
26
23
≥28
≥30
50
MODE OF
OPERATION
CW
Note
1. At PL = 16 W.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VS1
DC supply voltage
−
28
V
VS2
DC supply voltage
−
28
V
PD
input drive power
−
80
mW
PL
load power
−
32
W
Tstg
storage temperature
−30
+100
°C
Tmb
operating mounting-base temperature
−10
+90
°C
2000 Feb 02
2
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
CHARACTERISTICS
ZS = ZL = 50 Ω; PL = 23 W; VS1 = VS2 = 26 V; Tmb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f
frequency range
920
−
960
MHz
IS1
supply current
−
50
−
mA
IS2
supply current
−
500
−
mA
PL
load power
Gp
power gain
PD < −60 dBm
23
−
−
W
160 mW ≤ PL < 2 W
28
30
34
dB
2 W ≤ PL ≤ 23 W
28
30
32
dB
η
efficiency
PL = 16 W
30
−
−
%
H2
second harmonic
PL = 16 W
−
−
−35
dBc
H3
third harmonic
PL = 16 W
−
−
−40
dBc
VSWRin
−
−
2:1
stability
VSWR ≤ 3 : 1 through all phases;
VS2 = 26 to 27 V; PL = 23 W
−
−
−60
dBc
reverse intermodulation
Pcarrier = 16 W; Pinterference = 1.6 µW;
fi = fc ± 600 kHz
−
−80
−
dBc
direct intermodulation
Pcarrier = 16 W; Pinterference = 1.6 mW;
fi = fc + 270 kHz
−
−55
−
dBc
8
dBc
−
MHz
input VSWR
NF
noise figure
B
AM bandwidth
corner frequency = 3 dB;
Pcarrier = 16 W; modulation = 20%
2
ruggedness
VSWR ≤ 5 : 1 through all phases;
VS2 = 26 V; PL = 23 W
no degradation
2000 Feb 02
3
−
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
MCD830
35
MCD831
60
handbook, halfpage
handbook, halfpage
Gp
(dB)
η
(%)
920 MHz
30
920 MHz
940 MHz
40
960 MHz
940 MHz
960 MHz
25
20
20
0
0
10
20
PL (W)
30
0
10
20
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; Tmb = 25 °C.
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; Tmb = 25 °C.
Fig.2
Fig.3
Power gain as a function of load power;
typical values.
MCD832
35
Gp
(dB)
30
940 MHz
30
Efficiency as a function of load power;
typical values.
MCD833
3
handbook, halfpage
PL (W)
handbook, halfpage
IS2
960 MHz
(A)
2
920 MHz
25
1
20
10−4
10−2
1
PL (W)
0
10−4
102
10−2
1
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; Tmb = 25 °C.
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; Tmb = 25 °C;
f = 920 to 960 MHz.
Fig.4
Fig.5
Power gain as a function of load power;
typical values.
2000 Feb 02
4
102
PL (W)
Supply current as a function of load power;
typical values.
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
MCD834
35
MCD835
0
handbook, halfpage
handbook, halfpage
Return
Losses
(dB)
−4
Gp
(dB)
30
−8
−12
25
−16
20
800
900
1000
f (MHz)
−20
800
1100
900
1000
f (MHz)
1100
ZS = ZL = 50 Ω; PD = −30 dBm; VS1 = VS2 = 26 V; Tmb = 25 °C.
ZS = ZL = 50 Ω; PD = −30 dBm; VS1 = VS2 = 26 V; Tmb = 25 °C.
Fig.6
Fig.7
Small signal in band power gain as a
function of frequency; typical values.
MCD836
40
Small signal in band input return losses as
a function of frequency; typical values.
MCD837
34
handbook,
G halfpage
handbook, halfpage
p
(dB)
20
Gp
(dB)
32
0
(1)
30
(2)
−20
(3)
(4)
28
(5)
−40
(6)
(7)
26
−60
−80
24
500
0
1000
f (MHz)
1500
0
10
20
30
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; Tmb = 25 °C.
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; PD = −30 dBm; Tmb = 25 °C.
Fig.8
Small signal out band power gain as a
function of frequency; typical values.
2000 Feb 02
(1) Tamb = −33°C.
(2) Tamb = −20°C.
(5) Tamb = 50°C.
(6) Tamb = 75°C.
(3) Tamb = 3°C.
(4) Tamb = 25°C.
(7) Tamb = 100°C.
Fig.9
5
PL (W)
40
Power gain as a function of load power;
typical values
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
MCD838
50
η
handbook, halfpage
IS2
(%)
(A)
40
0.4
30
0.3
20
0.2
10
0.1
0
−50
MCD839
0.5
handbook, halfpage
0
50
Tamb (°C)
0
−50
100
0
50
Tamb (°C)
100
ZS = ZL = 50 Ω; PL = 16 W; VS1 = VS2 = 26 V.
ZS = ZL = 50 Ω; VS1 = VS2 = 26 V; PD = 0.
Fig.10 Efficiency as a function of ambient
temperature; typical values.
Fig.11 Quiescent current as a function of ambient
temperature; typical values.
MCD840
40
MCD841
34
handbook, halfpage
handbook, halfpage
Gp
(dB)
PL(−1db)
(W)
32
30
30
20
28
10
26
0
−50
0
50
Tamb (°C)
24
−50
100
0
50
Tamb (°C)
100
ZS = ZL = 50 Ω; Pref = 5 W; VS1 = VS2 = 26 V.
ZS = ZL = 50 Ω; PL = 5 W; VS1 = VS2 = 26 V.
Fig.12 Load power at −1 dB gain as a function of
ambient temperature; typical values.
Fig.13 Power gain as a function of ambient
temperature; typical values.
2000 Feb 02
6
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
handbook, halfpage
pin
numbers
1
C3
2
Z1 R1
RF
input
C4
L1
3
R2
L2
C2
Vs2
C1
Vs1
Fig.14 Test circuit.
2000 Feb 02
7
4
Z2
RF
output
MGL161
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Philips Semiconductors
UHF amplifier module
2000 Feb 02
90
8
1
4
C4
C3
L1
L2
R1
R2
C2
Fig.15 Printed-circuit board component layout.
MGL162
BGY925
Dimensions in mm.
3
Product specification
2
handbook, full pagewidth
C1
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
List of components (See Figs 14 and 15)
COMPONENT
DESCRIPTION
VALUE
C1, C2
electrolytic capacitor
10 µF; 35 V
C3, C4
multilayer ceramic chip capacitor
100 nF; 50 V
L1, L2
Grade 4S2 Ferroxcube bead
R1, R2
metal film resistor
10 Ω; 0.4 W
Z1, Z2
stripline; note 1
50 Ω
CATALOGUE NO.
4330 030 36300
2322 195 13109
Note
1. The striplines are on a double copper-clad printed-circuit board with epoxy dielectric (εr = 4.5); thickness = 1 mm.
MOUNTING RECOMMENDATIONS
mounting-base; too little will also result in poor thermal
conduction.
To ensure a good thermal contact and to prevent
mechanical stress when bolted down, the flatness of the
mounting base is designed to be typically better than
0.1 mm. The mounting area of the heatsink should be flat
and free from burrs and loose particles. The heatsink
should be rigid and not prone to bowing under thermal
cycling conditions. The thickness of a solid heatsink
should be not less than 5 mm to ensure a rigid assembly.
The module should be mounted to the heatsink using
3 mm bolts with flat washers. The bolts should first be
tightened to “finger tight” and then further tightened in
alternating steps to a maximum torque of 0.4 to 0.6 Nm.
Once mounted on the heatsink, the module leads can be
soldered to the printed-circuit board. A soldering iron may
be used up to a temperature of 250 °C for a maximum of
10 seconds at a distance of 2 mm from the plastic cap.
A thin, even layer of thermal compound should be applied
between the mounting base and the heatsink to achieve
the best possible thermal contact resistance. Excessive
use of thermal compound will result in an increase in
thermal resistance and possible bowing of the
2000 Feb 02
ESD precautions must be taken to protect the device from
electrostatic damage.
9
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
PACKAGE OUTLINE
Plastic rectangular single-ended flat package; flange mounted; 2 mounting holes; 4 in-line leads
SOT365A
D
A
F
y
U
q
A
U2
p
E
U1
L
1
2
3
4
bp
e1
e
w M
e
c
v A
Z
0
Q
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
mm
9.5
9.0
0.56
0.46
0.3
0.2
30.1
29.9
18.6
18.4
OUTLINE
VERSION
e
e1
2.54 17.78
F
L
p
Q
3.25
3.15
6.5
6.1
4.1
3.9
4.0
3.8
REFERENCES
IEC
JEDEC
EIAJ
SOT365A
2000 Feb 02
q
U
40.74 48.0
40.54 48.4
U1
U2
v
w
y
Z
15.4
15.2
7.75
7.55
0.3
0.25
0.1
12.8
12.6
EUROPEAN
PROJECTION
ISSUE DATE
99-02-06
10
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Feb 02
11
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SCA 69
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603516/04/pp12
Date of release: 2000
Feb 02
Document order number:
9397 750 06749