DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ43T Magnetic field sensor Product specification Supersedes data of 2003 Mar 26 2003 Sep 15 Philips Semiconductors Product specification Magnetic field sensor KMZ43T DESCRIPTION PINNING The KMZ43T is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. The sensor contains two galvanic separated Wheatstone bridges, at a relative angle of 45° to one another. A rotating magnetic field in the x-y plane will produce two independent sinusoidal output signals, one a function of +cos(2α) and the second a function of +sin(2α), α being the angle between sensor and field direction (see Fig.3). Unlike the KMZ41(1), which needs a saturation field strength of 100 kA/m, the KMZ43T is suited to high precision angle measurement applications under low field conditions (saturation field strength 25 kA/m). The sensor can be operated at any frequency between DC and 1 MHz. PIN SYMBOL DESCRIPTION 1 −VO1 output voltage bridge 1 2 −VO2 output voltage bridge 2 3 VCC2 supply voltage bridge 2 4 VCC1 supply voltage bridge 1 5 +VO1 output voltage bridge 1 6 +VO2 output voltage bridge 2 7 GND2 ground 2 8 GND1 ground 1 handbook, halfpage 8 5 The information in application notes AN00023 (Contactless Angle Measurement Using KMZ41 and UZZ9000) and AN00004 (Contactless Angle Measurement Using KMZ41 and UZZ9001) is applicable to the KMZ43T, but one should be aware of the difference in the bridge 1 output. x y pin 1 index 1 4 MGD790 Fig.1 Simplified outline SOT96-1. (1) The KMZ41 delivers a +sin(2α) and a −cos(2α) signal. QUICK REFERENCE DATA SYMBOL PARAMETER MIN. TYP. MAX. UNIT Per bridge VCC supply voltage − 5 9 V S sensitivity (α2 = 0°; α1 = 135°) 2.1 2.35 2.6 mV/° Voffset offset voltage per supply voltage −2 − +2 mV/V Rbridge bridge resistance per bridge 2.7 3.2 3.7 kΩ 2003 Sep 15 2 Philips Semiconductors Product specification Magnetic field sensor KMZ43T CIRCUIT DIAGRAM handbook, halfpage GND1 +VO2 GND2 +VO1 8 7 6 5 1 2 3 4 −VO1 −VO2 VCC2 MGD789 VCC1 Fig.2 Simplified circuit diagram. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC1 supply voltage bridge 1 − 9 V VCC2 supply voltage bridge 2 − 9 V Tstg storage temperature −65 +150 °C Tamb operating ambient temperature −40 +150 °C STIMULATING FIELD STRENGTH CONDITIONS Hext MIN. magnetic field strength CONDITIONS note 1 MIN. MAX. − 25 UNIT kA/m Note 1. The minimum stimulating magnetic field in the x-y plane to ensure minimum angular inaccuracy specified in note 11 to Characteristics table. THERMAL CHARACTERISTICS SYMBOL Rth j-a 2003 Sep 15 PARAMETER thermal resistance from junction to ambient 3 VALUE UNIT 155 K/W Philips Semiconductors Product specification Magnetic field sensor KMZ43T CHARACTERISTICS Tamb = 25 °C and Hext = 25 kA/m; VCC1 = 5 V; VCC2 = 5 V; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ω operating angular velocity 0 − 1 MHz k amplitude synchronism note 9 99.5 100 100.5 % TCk temperature coefficient of amplitude synchronism Tamb = −40 to +150 °C; note 10 −0.01 0 −0.01 %/K ∆α angular inaccuracy note 11 0 0.05 0.1 deg − 5 9 V −2 0 +2 mV/V 2.1 2.35 2.6 mV/° Per bridge VCC supply voltage Voffset offset voltage per supply voltage see Fig.3 S sensitivity open circuit; note 1 α1 = 135° (bridge 1) α2 = 0° (bridge 2) 2.1 2.35 2.6 mV/° TCS temperature coefficient of sensitivity Tamb = −40 to +150 °C; note 2 −0.25 −0.29 −0.33 %/K Vpeak peak output voltage note 3; see Fig.3 60 67 75 mV TCVpeak temperature coefficient of peak output voltage Tamb = −40 to +150 °C; note 4 −0.25 −0.29 −0.33 %/K Rbridge bridge resistance note 5 2.7 3.2 3.7 kΩ TCRbridge temperature coefficient of bridge resistance Tamb = −40 to +150 °C; note 6 0.28 0.32 0.35 %/K TCVoffset temperature coefficient of offset voltage Tamb = −40 to +150 °C; note 7; see Fig.3 −4 0 +4 (µV/V)/K FH hysteresis of output voltage note 8 0 0.05 0.18 %FS Notes 1. Sensitivity changes with angle due to sinusoidal output. 2. ST – ST 2 1 TC S = 100 × -------------------------------- where T1 = −40 °C; T2 = 150 °C. S T × 190°C 1 3. Vpeak = (Vout max − Voffset). Periodicity of Vpeak: sin(2α) and cos(2α) respectively. 4. V peak ( T ) – V peak ( T ) 2 1 TC Vpeak = 100 × ----------------------------------------------------- where T1 = −40 °C; T2 = 150 °C. V peak ( T ) × 190°C 1 5. Bridge resistance between pins 8 and 4, pins 7 and 3, pins 5 and 1, and pins 6 and 2. 6. R bridge( T ) – R bridge( T ) 2 1 TC Rbridge = 100 × ---------------------------------------------------------- where T1 = −40 °C; T2 = 150 °C. R bridge ( T ) × 190°C 1 7. V offset ( T ) – V offset ( T ) 2 1 TC Voffset = -------------------------------------------------------- where T1 = −40 °C; T2 = 150 °C. 190°C 2003 Sep 15 4 Philips Semiconductors Product specification Magnetic field sensor 8. KMZ43T V O1 ( 67.5° ) 135° ⇒ 45° – V O1 ( 67.5° ) 45° ⇒ 135° FH 1 = 100 × ---------------------------------------------------------------------------------------------------------- . 2 × V peak1 V O2 ( 22.5° ) 90° ⇒ 0° – V O2 ( 22.5° ) 0° ⇒ 90° FH 2 = 100 × ------------------------------------------------------------------------------------------------. 2 × V peak2 9. V peak1 k = 100 × ----------------- . V peak2 kT – kT 2 1 10. TC k = 100 × ------------------------------- where T1 = −40 °C; T2 = 150 °C. k T × 190°C 1 11. ∆α = αreal − αmeasured without offset voltage influences due to deviations from ideal sinusoidal characteristics. 100 handbook, full pagewidth α = 0° VO1 Vout (mV) direction of magnetic field α 50 Voffset 1 0 0 Vpeak 1 −50 −VO1 GND1 −VO2 GND2 VCC2 +VO2 VCC1 +VO1 VO2 MBL215 −100 0 90 180 270 α (deg) 360 Fig.3 Output signals related to the direction of the magnetic field. 2003 Sep 15 5 Philips Semiconductors Product specification Magnetic field sensor KMZ43T MDB692 Vout handbook, halfpage VO2 FH2 0 0 VO1 FH1 0 45 90 α (deg) 135 Fig.4 Definition of hysteresis. 2003 Sep 15 6 Philips Semiconductors Product specification Magnetic field sensor KMZ43T PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 inches 0.010 0.057 0.069 0.004 0.049 0.05 0.244 0.039 0.028 0.041 0.228 0.016 0.024 0.01 0.01 0.028 0.004 0.012 θ Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03 MS-012 2003 Sep 15 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-18 7 o 8 0o Philips Semiconductors Product specification Magnetic field sensor KMZ43T DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Sep 15 8 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613520/03/pp9 Date of release: 2003 Sep 15 Document order number: 9397 750 11713