DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification November 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain • Easy power control ook, halfpage 1 • Gold metallization • Good thermal stability d 3 2 • Withstands full load mismatch g • Designed for broadband operation. MBB072 s 4 DESCRIPTION Top view Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT172D studless envelope, with a ceramic cap. All leads are isolated from the mounting base. MSB007 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING PINNING - SOT172D PIN DESCRIPTION 1 source 2 gate 3 drain 4 source Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B November 1992 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 500 12.5 2 > 10 > 50 2 Philips Semiconductors Product specification UHF power MOS transistor BLF521 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 40 V ±VGS gate-source voltage − 20 V ID DC drain current − 1 A Ptot total power dissipation − 10 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C up to Tmb = 25 °C THERMAL RESISTANCE SYMBOL THERMAL RESISTANCE PARAMETER Rth j-mb thermal resistance from junction to mounting base Rth j-a thermal resistance from junction to ambient (note 1) 17.5 K/W 75 K/W Note 1. Mounted on printed circuit board, see Fig.12. MRA989 5 MDA486 16 handbook, halfpage handbook, halfpage Ptot (W) ID (A) (2) 12 1 (1) (1) 8 (2) 4 0.1 1 10 VDS (V) 0 100 0 (1) Current in this area may be limited by RDS(on). (2) Tmb = 25 °C. 80 120 160 Tmb ( °C) (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. November 1992 40 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification UHF power MOS transistor BLF521 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VGS = 0; ID = 3 mA MIN. TYP. MAX. UNIT 40 − − V(BR)DSS drain-source breakdown voltage V IDSS drain-source leakage current VGS = 0; VDS = 12.5 V − − 10 µA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 3 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance ID = 0.3 A; VDS = 10 V 80 135 − mS RDS(on) drain-source on-state resistance ID = 0.3 A; VGS = 15 V − 3.5 4 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V − 1.3 − A Cis input capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 5.3 − pF Cos output capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 7.8 − pF Crs feedback capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 1.8 − pF MDA485 15 MDA484 1600 handbook, halfpage handbook, halfpage ID (mA) T.C (mV/K) 1200 10 800 5 400 0 0 −5 1 10 102 ID (A) 0 103 4 VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Fig.5 Temperature coefficient of gate-source voltage as a function of drain current, typical values. November 1992 4 8 12 16 20 VGS (V) Drain current as a function of gate-source voltage, typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF521 MDA483 5 MDA482 30 handbook, halfpage handbook, halfpage RDSon (Ω) 4 C (pF) 20 3 Cos 2 10 Cis 1 0 0 0 40 80 120 Tj (°C) 160 0 4 ID = 0.3 A; VGS = 15 V. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values. MDA481 5 handbook, halfpage Crs (pF) 4 3 2 1 0 0 4 8 12 VDS (V) 16 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. November 1992 5 8 12 VDS (V) 16 Input and output capacitance as functions of drain-source voltage, typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF521 APPLICATION INFORMATION FOR CLASS-B OPERATION Tamb = 25 °C; RGS = 274 Ω, unless otherwise specified. RF performance in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) GP (dB) ηD (%) 500 12.5 10 2 > 10 typ. 13 > 50 typ. 60 Ruggedness in class-B operation The BLF521 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VDS = 15.5 V; f = 500 MHz at rated output power. MDA480 handbook, halfpage 100 ηD (dB) 16 (%) 80 20 Gp Gp ηD 12 MDA479 4 handbook, halfpage PL (W) 3 60 2 8 40 4 20 1 0 0.5 1.5 2.5 PL (W) 0 0 3.5 0 Class-B operation; VDS = 12.5 V; IDQ = 10 mA; ZL = 9.5 + j12.8; f = 500 MHz. Fig.9 0.4 0.6 0.8 1.0 PIN (W) Class-B operation; VDS = 12.5 V; IDQ = 20 mA; ZL = 9.5 + j12.8; f = 175 MHz. Power gain and efficiency as functions of load power, typical values. November 1992 0.2 Fig.10 Load power as a function of input power, typical values. 6 Philips Semiconductors Product specification UHF power MOS transistor handbook, full pagewidth BLF521 ,,,,, ,,,,, ,,,,, C12 50 Ω input C1 L1 L2 L5 D.U.T. C3 L3 L8 L9 BLF521 C2 L10 C15 L4 C4 C13 C14 L6 R1 C7 R6 C5 C11 C8 L7 R2 C9 R3 C6 C10 +VD R4 R5 f = 500 MHz. Fig.11 Test circuit for class-B operation. November 1992 7 MDA475 50 Ω output Philips Semiconductors Product specification UHF power MOS transistor BLF521 List of components (class-AB test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C5, C8, C15 multilayer ceramic chip capacitor (note 1) 390 pF, 500 V C2, C13 film dielectric trimmer 2 to 9 pF C3 multilayer ceramic chip capacitor (note 2) 5.6 pF, 500 V C4 film dielectric trimmer 2 to 18 pF 2222 809 09003 C6, C11 multilayer ceramic chip capacitor 2 × 100 nF in parallel, 50 V 2222 852 47104 C7, C9 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104 C10 electrolytic capacitor 10 µF, 63 V 2222 030 38109 C12 multilayer ceramic chip capacitor (note 2) 9.1 pF, 50 V C14 film dielectric trimmer 1.4 to 5.5 pF L1 stripline (note 3) 83 Ω 20 × 2 mm L2 stripline (note 3) 83 Ω 21 × 2 mm 2222 809 09002 2222 809 09001 L3 stripline (note 3) 83 Ω 19 × 2 mm L4, L5 stripline (note 3) 67 Ω 12 × 3 mm L6 5 turns enamelled 0.5 mm copper wire 62 nH length 3.75 mm int. dia. 3 mm leads 2 × 4 mm L7 grade 3B Ferroxcube RF choke L8 stripline (note 3) 83 Ω 18.6 × 2 mm L9 stripline (note 3) 83 Ω 31.6 × 2 mm L10 stripline (note 3) 83 Ω 2 × 2 mm 4312 020 36642 R1 0.4 W metal film resistor 274 Ω 2322 151 72741 R2 0.4 W metal film resistor 1.96 kΩ 2322 151 71962 R3 0.4 W metal film resistor 1 MΩ 2322 151 71005 R4 cermet potentiometer 5 kΩ R5 0.4 W metal film resistor 7.5 kΩ 2322 151 77502 R6 1 W metal film resistor 10 Ω 2322 153 51009 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness 1.6 mm. November 1992 8 Philips Semiconductors Product specification UHF power MOS transistor BLF521 +VDS R4 handbook, full pagewidth C9 C11 C10 R3 R6 R2 L7 C5 C8 C7 C3 L1 L2 L3 C6 R1 L5 L4 C15 C12 L6 L8 L9 L10 C1 C2 C4 C13 C14 MBA381 150 mm handbook, full pagewidth rivets strap strap rivets 70 mm strap strap rivets mounting screws (6x) MBA380 The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Fig.12 Component layout for 500 MHz test circuit. November 1992 9 Philips Semiconductors Product specification UHF power MOS transistor BLF521 MDA478 50 MDA477 50 ZL handbook, halfpage handbook, halfpage (Ω) Zi (Ω) 40 ri 0 30 RL 20 xi −50 XL 10 −100 100 200 300 400 f (MHz) 0 100 500 200 300 400 f (MHz) 500 Class-B operation; VDS = 12.5 V; IDQ = 10 mA; RGS = 274 Ω; PL = 2 W. Class-B operation; VDS = 12.5 V; IDQ = 10 mA; RGS = 274 Ω; PL = 2 W. Fig.13 Input impedance as a function of frequency (series components), typical values per section. Fig.14 Load impedance as a function of frequency (series components), typical values. MDA476 20 Gp handbook, halfpage (dB) 16 12 handbook, halfpage 8 4 Zi ZL MBA379 0 100 200 300 400 f (MHz) 500 Class-B operation; VDS = 12.5 V; IDQ = 10 mA; RGS = 274 Ω; PL = 2 W. Fig.15 Definition of MOS impedance. November 1992 Fig.16 Power gain as a function of frequency, typical values. 10 Philips Semiconductors Product specification UHF power MOS transistor BLF521 Common emitter S-parameters Measured at VDS = 12.5 V and ID = 100 mA. f (MHz) S21 S11 S12 S22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 40 0.968 −24.0 10.749 161.5 0.044 72.6 0.900 −27.4 100 0.864 −55.4 9.105 138.3 0.094 51.7 0.828 −62.4 200 0.701 −91.0 6.353 112.7 0.130 29.7 0.735 −100.8 300 0.626 −112.4 4.693 97.0 0.140 17.2 0.693 −122.7 400 0.587 −127.0 3.622 85.6 0.141 9.4 0.678 −136.3 500 0.580 −137.1 2.959 76.5 0.139 4.0 0.675 −145.4 600 0.580 −144.6 2.498 68.8 0.135 0.0 0.675 −152.1 700 0.581 −151.7 2.131 61.4 0.130 −2.5 0.677 −157.5 800 0.588 −157.6 1.874 54.7 0.123 −4.3 0.677 −162.3 900 0.596 −163.5 1.656 48.8 0.115 −4.8 0.683 −166.9 1000 0.605 −168.8 1.473 43.0 0.107 −4.4 0.689 −171.2 Measured at VDS = 12.5 V and ID = 150 mA. f (MHz) S11 S21 S12 S22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 40 0.965 −25.9 11.435 160.6 0.044 72.0 0.876 −29.2 100 0.857 −58.7 9.534 136.8 0.092 50.1 0.804 −65.7 200 0.691 −95.1 6.529 111.3 0.125 28.6 0.715 −104.3 300 0.622 −116.7 4.783 96.0 0.134 16.7 0.678 −125.8 400 0.588 −130.3 3.663 84.8 0.135 9.2 0.666 −138.8 500 0.580 −140.8 2.988 75.9 0.133 4.3 0.665 −147.5 600 0.582 −147.8 2.515 68.4 0.128 0.7 0.666 −154.0 700 0.586 −154.9 2.154 61.2 0.123 −1.3 0.668 −159.1 800 0.588 −160.5 1.897 54.6 0.117 −2.6 0.669 −163.8 900 0.599 −166.3 1.673 48.8 0.111 −2.6 0.675 −168.1 1000 0.609 −171.7 1.493 43.0 0.103 −1.7 0.681 −172.3 November 1992 11 Philips Semiconductors Product specification UHF power MOS transistor BLF521 Measured at VDS = 12.5 V and ID = 200 mA. f (MHz) S21 S11 S12 S22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 40 0.965 −26.7 11.660 160.1 0.044 71.4 0.854 −30.4 100 0.851 −60.7 9.625 135.9 0.091 49.4 0.783 −67.7 200 0.688 −97.5 6.524 110.5 0.123 27.9 0.699 −106.5 300 0.623 −118.8 4.751 95.2 0.131 16.4 0.666 −127.6 400 0.590 −132.7 3.644 84.3 0.132 9.2 0.657 −140.3 500 0.585 −142.4 2.968 75.3 0.130 4.3 0.658 −148.7 600 0.583 −150.0 2.495 67.8 0.126 1.0 0.659 −155.0 700 0.589 −156.7 2.137 60.7 0.120 −0.8 0.662 −160.0 800 0.593 −162.2 1.877 54.3 0.114 −1.9 0.664 −164.6 900 0.602 −167.8 1.656 48.4 0.108 −1.7 0.670 −168.9 1000 0.612 −173.0 1.476 42.8 0.100 −0.5 0.677 −173.0 Measured at VDS = 12.5 V and ID = 250 mA. f (MHz) S11 S21 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) S12 ANGLE (deg) MAGNITUDE (ratio) S22 ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 40 0.963 −27.3 11.640 159.7 0.045 70.8 0.832 −31.3 100 0.848 −62.0 9.567 135.2 0.092 48.9 0.766 −69.2 200 0.686 −99.3 6.434 109.8 0.123 27.4 0.688 −108.2 300 0.624 −120.3 4.674 94.6 0.130 16.0 0.657 −128.9 400 0.594 −134.2 3.582 83.8 0.130 8.9 0.651 −141.3 500 0.585 −143.9 2.914 74.7 0.128 4.2 0.651 −149.6 600 0.590 −150.8 2.447 67.4 0.124 0.9 0.654 −155.8 700 0.595 −157.6 2.097 60.3 0.119 −0.6 0.658 −160.7 800 0.601 −163.1 1.840 53.8 0.113 −1.7 0.660 −165.2 900 0.607 −168.8 1.625 48.0 0.106 −1.3 0.667 −169.4 1000 0.613 −174.1 1.447 42.2 0.099 −0.1 0.673 −173.3 November 1992 12 Philips Semiconductors Product specification UHF power MOS transistor BLF521 PACKAGE OUTLINE Studless ceramic package; 4 leads SOT172D D A Q c D1 H b 4 b1 H 1 3 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 H Q mm 3.71 2.89 3.31 3.04 0.89 0.63 0.16 0.10 5.20 4.95 5.33 5.08 26.17 24.63 1.15 0.88 inches 0.146 0.114 0.13 0.12 0.035 0.006 0.025 0.004 0.205 0.210 0.195 0.200 1.03 0.97 0.045 0.035 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-06-28 SOT172D November 1992 EUROPEAN PROJECTION 13 Philips Semiconductors Product specification UHF power MOS transistor BLF521 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1992 14