DISCRETE SEMICONDUCTORS DATA SHEET BLF248 VHF push-pull power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF248 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. 1 2 d2 halfpage g2 DESCRIPTION 5 Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. DESCRIPTION 1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source d1 5 3 4 Top view MBB157 MSB008 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING PINNING - SOT262 A1 PIN s g1 Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source test circuit. MODE OF OPERATION class-AB September 1992 f (MHz) VDS (V) PL (W) GP (dB) ηD (%) 225 28 300 > 10 > 55 175 28 300 typ. 13 typ. 67 2 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 25 A Ptot total power dissipation 500 W Tstg storage temperature 150 °C up to Tmb = 25 °C total device; − both sections equally loaded −65 THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Rth j-mb thermal resistance from junction to mounting base total device; both sections equally loaded. 0.35 K/W Rth mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded. 0.15 K/W MGP203 MRA933 102 handbook, halfpage 600 handbook, halfpage Ptot ID (A) (2) (W) (1) (2) 400 (1) 10 200 1 1 10 VDS (V) 0 102 0 (1) Current is this area may be limited by RDS(on). (2) Tmb = 25 °C. Total device; both sections equally loaded. 100 Th (°C) 150 (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. Fig.2 DC SOAR. September 1992 50 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 CHARACTERISTICS (per section) Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VGS = 0; ID = 100 mA 65 − − V V(BR)DSS drain-source breakdown voltage IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 5 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 100 mA; VDS = 10 V 2 − 4.5 V ∆VGS gate-source voltage difference of both transistor sections ID = 100 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 8 A; VDS = 10 V 5 7.5 − S gfs1/gfs2 forward transconductance ratio of both transistor sections ID = 8 A; VDS = 10 V 0.9 − 1.1 RDS(on) drain-source on-state resistance ID = 8 A; VGS = 10 V − 0.1 0.15 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 37 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 500 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 360 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 46 − pF MGP204 0 MGP205 60 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) −1 40 −2 −3 20 −4 −5 10−1 1 ID (A) 0 10 0 5 VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Fig.5 Temperature coefficient of gate-source voltage as a function of drain current, typical values per section. September 1992 4 10 15 VGS (V) 20 Drain current as a function of gate-source voltage, typical values per section. Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 MGP207 1500 MGP206 handbook, halfpage 200 handbook, halfpage C (pF) RDS(on) (mΩ) 1000 100 Cis 500 Cos 0 0 0 0 50 100 Tj (°C) 10 150 ID = 8 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values per section. MGP208 600 handbook, halfpage Crs (pF) 400 200 0 0 10 20 30 VDS (V) 40 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values per section. September 1992 5 20 30 VDS (V) 40 Input and output capacitance as functions of drain-source voltage, typical values per section. Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25 °C; Rth mb-h = 0.15 K/W, unless otherwise specified. RF performance in a linear amplifier in a common source class-AB circuit. RGS = 536 Ω per section; optimum load impedance per section = 0.79 − j0.11 Ω. MODE OF OPERATION class-AB f (MHz) VDS (V) PL (W) GP (dB) ηD (%) 225 28 300 > 10 typ. 11.5 > 55 typ. 65 175 28 300 typ. 13 typ. 67 Ruggedness in class-AB operation The BLF248 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 28 V; f = 225 MHz at rated output power. MGP210 MGP209 20 Gp (dB) ηD Th = 25 °C 70 °C 15 25 °C 70 °C Gp 10 5 0 0 400 80 handbook, halfpage 100 200 300 PL (W) handbook, halfpage ηD (%) PL (W) 60 70 °C 40 200 20 100 0 0 400 0 20 30 PIN (W) 40 Fig.10 Load power as a function of input power, typical values. Power gain and efficiency as functions of load power, typical values. September 1992 10 Class-AB operation; VDS = 28 V; IDQ = 2 × 250 mA; RGS = 536 Ω (per section); ZL = 0.79 − j0.11 Ω (per section); f = 225 MHz. Class-AB operation; VDS = 28 V; IDQ = 2 × 250 mA; RGS = 536 Ω (per section); ZL = 0.79 − j0.11 Ω (per section); f = 225 MHz. Fig.9 Th = 25 °C 300 6 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... C12 C17 C8 R7 R2 L12 C18 C9 C13 C6 L13 R3 C25 D.U.T. L1 50 Ω input C1 L4 L2 C4 L18 L20 C29 L22 L8 L6 C3 L10 L16 C5 C22 C23 C24 C27 L23 C28 50 Ω output Philips Semiconductors A C16 VHF push-pull power MOS transistor dbook, full pagewidth September 1992 R1 VDD1 7 C2 L3 L7 L5 C30 L9 L11 L21 L24 L14 C7 C10 L19 L17 C26 R4 C14 C19 R5 R8 A L15 C11 C20 IC1 C15 R9 R6 C34 C32 C21 C31 MGP211 f = 225 MHz. Fig.11 Test circuit for class-AB operation. BLF248 VDD2 Product specification VDD1 C33 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 List of components (class-AB test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C2 multilayer ceramic chip capacitor (note 1) 2 × 56 pF + 18 pF in parallel, 500 V C3 film dielectric trimmer 2 to 9 pF C4 multilayer ceramic chip capacitor (note 1) 47 pF, 500 V C5 film dielectric trimmer 5 to 60 pF C6, C7, C9, C10, C12, C15, C31, C34 multilayer ceramic chip capacitor (note 1) 1 nF, 500 V C8, C11, C16, C21, C32 multilayer ceramic chip capacitor 100 nF, 50 V C13, C14, C18, C19 multilayer ceramic chip capacitor (note 1) 510 pF, 500 V C17, C20, C33 electrolytic capacitor 10 µF, 63 V C22 multilayer ceramic chip capacitor (note 1) 82 pF, 500 V C23 multilayer ceramic chip capacitor (note 1) 10 pF + 30 pF in parallel, 500 V C24, C28 film dielectric trimmer 2 to 18 pF C25, C26 multilayer ceramic chip capacitor (note 1) 39 pF + 47 pF in parallel, 500 V C27 multilayer ceramic chip capacitor (note 1) 18 pF, 500 V C29, C30 multilayer ceramic chip capacitor (note 1) 3 × 100 pF in parallel, 500 V L1, L3, L22, L24 stripline (note 2) 50 Ω 4.8 × 80 mm L2, L23 semi-rigid cable (note 3) 50 Ω ext. dia. 3.6 mm ext. conductor length 80 mm L4, L5 stripline (note 2) 43 Ω 6 × 32.5 mm L6, L7, L10, L11 stripline (note 2) 43 Ω 6 × 10.5 mm L8, L9 stripline (note 2) 43 Ω 6 × 3 mm L12, L15 grade 3B Ferroxcube wide-band HF choke 2 in parallel L13, L14 2 turns enamelled 1.6 mm copper wire 25 nH int. dia. 5 mm leads 2 × 7 mm space 2.5 mm L16, L17 stripline (notes 2 and 4) 43 Ω 6 × 3 mm L18, L19 stripline (notes 2 and 4) 43 Ω 6 × 35 mm L20, L21 stripline (notes 2 and 4) 43 Ω 6 × 9 mm R1, R6 10 turns potentiometer 50 kΩ R2, R5 0.4 W metal film resistor 1 kΩ September 1992 8 CATALOGUE NO. 2222 809 09005 2222 809 08003 2222 852 47104 2222 809 09006 4312 020 36642 Philips Semiconductors Product specification VHF push-pull power MOS transistor COMPONENT BLF248 DESCRIPTION VALUE R3, R4 0.4 W metal film resistor 536 Ω R7, R8 1 W metal film resistor 10 Ω ±5% R9 1 W metal film resistor 3.16 kΩ IC1 78L05 voltage regulator DIMENSIONS CATALOGUE NO. Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. L1, L3 - L11, L16 - L22 and L24 are micro-striplines on a double copper-clad printed circuit board, with glass microfibre PTFE dielectric (εr = 2.2), thickness 1⁄16 inch, thickness of copper sheet 2 × 35 µm. 3. L2 and L23 are soldered on striplines L1 and L24 respectively. 4. A copper strap, thickness 0.8 mm, is soldered on striplines L16 - L21. September 1992 9 Philips Semiconductors Product specification VHF push-pull power MOS transistor handbook, full pagewidth BLF248 130 119 100 IC1 R9 +VDD1 to R1, R6 C31 C32 C16 L12 C17 R7 C34 L1 C12 C13 C18 C33 L2 L12 slider R1 L22 C9 L13 R2 C8 +VDD1 C6 hollow rivet R3 C1 L4 hollow rivets C3 L5 L8 L10 L6 C4 L7 C5 C2 R4 R5 C11 L9 C22 L11 C29 C25 L16 L20 L18 C27 C23 C24 L17 C26 L19 C10 hollow rivets C28 L21 C30 +VDD2 L14 L3 slider R6 C7 L23 L15 L24 R8 C19 copper strap C20 L15 C14 C15 C21 copper strap MGP213 The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets. Dimensions in mm. Fig.12 Component layout for 225 MHz class-AB test circuit. September 1992 10 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 MGP218 MGP217 3 5 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri 0 2 xi RL −5 1 XL −10 0 −15 −20 −1 0 50 100 150 0 200 250 f (MHz) 50 100 150 200 250 f (MHz) Class-AB operation; VDS = 28 V; ID = 2 × 250 mA; RGS = 536 Ω (per section); PL = 300 W (total device); Th = 25 °C. Class-AB operation; VDS = 28 V; ID = 2 × 250 mA; RGS = 536 Ω (per section); PL = 300 W (total device); Th = 25 °C. Fig.13 Input impedance as a function of frequency (series components), typical values per section. Fig.14 Load impedance as a function of frequency (series components), typical values per section. MGP216 40 handbook, halfpage Gp (dB) 30 20 10 0 0 50 100 150 200 250 f (MHz) Class-AB operation; VDS = 28 V; ID = 2 × 250 mA; RGS = 536 Ω (per section); PL = 300 W (total device); Th = 25 °C. Fig.15 Power gain as a function of frequency, typical values per section. September 1992 11 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1 D A F U1 B q C w2 M C H1 1 H c 2 E1 p U2 5 E w1 M A B A 3 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 5.77 5.00 5.85 5.58 0.16 0.10 inches 0.227 0.197 0.230 0.006 0.220 0.004 OUTLINE VERSION D F H H1 p Q q U1 U2 w1 w2 w3 21.98 10.27 10.29 11.05 21.71 10.05 10.03 1.78 1.52 20.58 20.06 17.02 16.51 3.28 3.02 2.85 2.59 27.94 34.17 33.90 9.91 9.65 0.51 1.02 0.25 0.865 0.404 0.405 0.435 0.855 0.396 0.395 0.070 0.060 0.81 0.79 0.67 0.65 0.129 0.119 0.112 1.100 0.102 1.345 1.335 0.390 0.380 0.02 0.04 0.01 e E E1 REFERENCES IEC JEDEC EIAJ SOT262A1 September 1992 EUROPEAN PROJECTION ISSUE DATE 97-06-28 12 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1992 13