MOTOROLA TPV8200B

Order this document
by TPV8200B/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
The TPV8200B is designed for output stages in band IV and V TV transmitter
amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
Including input and output matching networks, the TPV8200B features high
impedances. It can operate over the 470 MHz to 860 MHz bandwidth using a
single fixed tuned circuit.
Motorola Preferred Device
190 W, 470 – 860 MHz
RF POWER TRANSISTOR
NPN SILICON
• To be used class AB for TV band IV and V.
• Specified 28 Volts, 860 MHz Characteristics
Output Power = 190 Watts (peak sync.)
Output Power = 150 Watts (CW)
Gain = 8 dB Min
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CASE 375A–01, STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Voltage
Rating
VCEO
30
Vdc
Collector–Base Voltage
VCBO
65
Vdc
Emitter–Base Voltage
VEBO
4
Vdc
Collector–Current — Continuous
IC
20
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
250
1.43
Watts
W/°C
Quiescent Current (without RF drive)
ICQ
2 x 500
mAdc
Storage Temperature Range
Tstg
– 65 to +150
°C
Symbol
Max
Unit
RθJC
0.7
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V(BR)CEO
30
35
—
Vdc
Collector–Base Breakdown Voltage
(IC = 20 mAdc, IE = 0)
V(BR)CBO
65
80
—
Vdc
Emitter–Base Breakdown Voltage (IE = 20 mAdc, IC = 0)
V(BR)EBO
4
5
—
Vdc
ICER
—
—
15
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Leakage Current (VCE = 28 Vdc, RBE = 75 Ω)
NOTE:
1. Thermal resistance is determined under specific RF condition.
mAdc
(continued)
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 6
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1994
TPV8200B
1
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
hFE
30
75
120
—
Cob
—
76
—
pF
Common–Emitter Amplifier Power Gain
(VCE = 28 Vdc, Pout = 150 W, ICQ = 2 x 75 mA, f = 860 MHz)
Gpe
8
9.5
—
dB
Collector Efficiency
(VCE = 28 Vdc, Pout = 150 W, ICQ = 2 x 75 mA, f = 860 MHz)
η
45
53
—
%
Output Power @ 1 dB Compression (Pref = 40 W)
(VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz)
Pout
150
165
—
W
Input overdrive: no degradation
(VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz)
Pin
30
—
—
W
Characteristic
ON CHARACTERISTICS
DC Current Gain (ICE = 2 Adc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance (each side) (2)
(VCB = 28 Vdc, IE = 0, f = 1 MHz)
FUNCTIONAL TESTS IN CW
ψ
Output Mismatch Stress:
(VCE = 28 Vdc, Pout = 120 W, ICQ = 2 x 75 mA, f = 860 MHz,
Load VSWR = 3:1, all phase angles at frequency of test)
No Degradation in Output Power
Before or After Test
FUNCTIONAL TESTS IN VIDEO (Standard Black Level)
Peak Output Power @ 1 dB Compression
(VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz)
Pout
190
210
—
W
NOTE:
2. Value of “Cob” is that of die only. It is not measurable in TPV8200B because of internal matching network.
VCC
T1
R4
C8
R5
R3
P1
C10
C9
C11
T2
C6
C7
D.U.T.
C3
R2
C5
L1
INPUT
C2
L2
C4
OUTPUT
C1
R2
C7
C6
R1
C1 — Chip Capacitor 47 pF ATC 100A
C2 — Chip Capacitor 12 pF ATC 100B
C2 — + Trimmer Capacitor 0.5– 4 pF
C3 — Chip Capacitor 8.2 pF ATC 100B
C4 — Chip Capacitor 12 pF ATC 100B
C5 — Chip Capacitor 100 pF ATC 100A
C6 — Chip Capacitor 2 x 1000 pF Vitramon
C7 — Chip Capacitor 2 x 0.1 µF Vitramon
C3
C8 — Capacitor 220 µF/16 V
C9 — Capacitor 100 µF/40 V
C10 — Chip Capacitor 100 pF Vitramon
C11 — Chip Capacitor 15 nF Vitramon
L1 — Coaxial 25 Ω / length = 41 mm
L2 — Coaxial 25 Ω / length = 41 mm
R1 — Chip Resistor 47 Ω
R2 — 2 x 1 Ω (0.5 Ω)
R3 — Resistor 0.8 Ω
R4 — Resistor 47 Ω
R5 — Resistor 1.2 kΩ
P1 — Trimmer Resistor 5 kΩ
T1 — Transistor BD 135
T2 — Transistor BD 135
PC Board: 1/50″ Glass Teflon ∈r = 2.55
Figure 1. 860 MHz Test Circuit
TPV8200B
2
MOTOROLA RF DEVICE DATA
INPUT
OUTPUT
ÂÂ
ÂÂ
ÂÂ
ÂÂ
Figure 2. Components View
CAUTION
The TPV8200B is a high power transistor and thermal adaptation is very important for good RF performance
(see mechanical drawing for mounting recommendations).
Maximum Ratings are given to avoid destruction of the transistor; another limitation is MMMTBF and the
user must first determine the minimum wanted life–time in order to choose the right way of use for the device
(see MMMTBF curves), especially in case of CW application.
MOTOROLA RF DEVICE DATA
TPV8200B
3
230
13
210
12
G pe , POWER GAIN (dB)
Po, OUTPUT POWER (WATTS)
TYPICAL CHARACTERISTICS
190
170
VCE = 28 V
ICQ = 2 x 75 mA
150
130
470
11
10
VCE = 28 V
ICQ = 2 x 75 mA
Pout = 150 W
9
665
8
470
860
665
f, FREQUENCY (MHz)
860
f, FREQUENCY (MHz)
Figure 3. Output Power @ 1 dB Comp.
versus Frequency
Figure 4. Power Gain versus Frequency
150
50
η , EFFICIENCY (%)
Po, OUTPUT POWER (WATTS)
60
100
VCE = 28 V
ICQ = 2 x 75 mA
f = 860 MHz
50
40
30
20
VCE = 28 V
ICQ = 2 x 75 mA
f = 860 MHz
10
0
0
0
10
0
20
50
INPUT POWER (WATTS)
Figure 5. Output Power versus Input Power
150
Figure 6. Collector Efficiency versus Output Power
–20
–20
IMD
–17 dB
INTERMODULATION (dB)
VCE = 28 V
ICQ = 2 x 75 mA
f = 860 MHz
–5 dB
INTERMODULATION (dB)
100
OUTPUT POWER (WATTS)
–30
–40
VCE = 28 V
ICQ = 2 x 75 mA
f = 860 MHz
–30
–40
0 dB
IMD
–7 dB
–50
–50
50
100
150
200
250
25
50
75
100
Po, OUTPUT POWER (WATTS)
Po, OUTPUT POWER (WATTS)
Figure 7. Intermodulation versus Peak Power
(Side Band)
Figure 8. Intermodulation versus Peak Power
(Dual Sound)
TPV8200B
4
MOTOROLA RF DEVICE DATA
TYPICAL VIDEO CHARACTERISTICS @ f = 860 MHz
VCE = 28 V
VCE = 28 V
ICQ = 2 x 75 mA
f = 860 MHz
(Channel 69)
Black Level
100
VCE = 28 V
ICQ = 2 x 75 mA
f = 860 MHz
27%
(Channel 69)
0%
Black Level
(Input Video Waveform)
0
40
(Input Video Waveform)
30
SYNC. PULSE (%)
Po, OUTPUT POWER (WATTS)
200
150
100
25
20
50
5
10
15
20
25
15
0
50
Pin, INPUT POWER (WATTS)
Pout = 100 W
(Input Video Waveform)
%
100
90
80
70
60
50
40
30
20
10
0
Pout = 150 W
200
Figure 10. Sync. Pulse versus Peak
Output Power
(Input Video Waveform)
%
100
90
80
70
60
50
40
30
20
10
0
150
Po, OUTPUT POWER (WATTS)
Figure 9. Peak Output Power versus Peak
Input Power
TEST CONDITIONS:
10% Rest Carrier
Channel 69
VCE = 28 V
ICQ = 2 x 75 mA
100
%
100
90
80
70
60
50
40
30
20
10
0
Pout = 210 W
Pout = 210 W
APL 10–90 (%)
Figure 11. Gain versus Output Power
MOTOROLA RF DEVICE DATA
TPV8200B
5
Zin
f = 470 MHz
860
f
MHz
Zin
Ohms
ZOL*
Ohms
470
567
665
762
860
0.80 + j2.11
0.85 + j3.15
1.56 + j4.20
2.64 + j3.36
2.72 + j2.24
7.93 + j0.94
5.94 + j0.30
4.55 – j0.02
3.70 – j0.52
2.91 – j0.92
ZOL* = Conjugate of optimum load impedance into which
ZOL* = the device operates at a given output power,
ZOL* = voltage, current, and frequency.
470
ZOL*
f = 860 MHz
Zo = 10 Ω
Base–base & collector–collector Impedances with
Circuit Tuned for Maximum Gain @ VCE = 28 V / ICQ = 2 x 75 mA / Pout = 150 W
Figure 12. Series Equivalent Input/Output Impedances
RELIABILITY DEPENDENCE ON THERMAL CONSIDERATIONS
0.80
1011
0.75
1010
MMMTBF (HOURS. A2 )
Rth , JUNCTION – CASE (°C/W)
MMMTBF: Metal Migration Mean Time Before Failure.
0.70
0.65
109
108
107
0.60
0.55
50
100
150
200
250
106
50
Figure 13. Thermal Resistance versus
Junction Temperature
TYPICAL CONDITIONS (120 W CW):
TPV8200B
6
J = (5.64) 104 A/cm2
200
250
Figure 14. MMMTBF versus Junction Temperature
TYPICAL CONDITIONS (210 W VIDEO):
Pdiss = 161 W
Tjct = 183°C
150
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Pout = 120 W
Pin = 15 W
VCE = 28 V
η = 45%
ICQ = 9.5 A
RTH = 0.7°C/W
Tmax = 70°C
100
MTBF =
26 YEARS
Pout = 70 W
Pin = 7.8 W
VCE = 28 V
η = 38%
ICQ = 6.6 A
RTH = 0.7°C/W
Tmax = 70°C
Pdiss = 123 W
Tjct = 156°C
MTBF =
252 YEARS
J = (3.92) 104 A/cm2
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
Q
2 PL
G
L
1
0.25 (0.010)
T B
2
5
3
4
D
E
N
F
H
–T–
A
SEATING
PLANE
C
CASE 375A–01
ISSUE O
MOTOROLA RF DEVICE DATA
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
F
G
H
K
L
N
Q
R
–B–
R
K
M
INCHES
MIN
MAX
1.330
1.350
0.375
0.395
0.180
0.205
0.320
0.340
0.060
0.070
0.004
0.006
1.100 BSC
0.082
0.097
0.580
0.620
0.435 BSC
0.845
0.875
0.118
0.130
0.390
0.410
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
33.79
34.29
9.52
10.03
4.57
5.21
8.13
8.64
1.52
1.77
0.11
0.15
27.94 BSC
2.08
2.46
14.73
15.75
11.05 BSC
21.46
22.23
3.00
3.30
9.91
10.41
COLLECTOR
COLLECTOR
BASE
BASE
EMITTER
TPV8200B
7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
TPV8200B
8
◊
*TPV8200B/D*
TPV8200B/D
MOTOROLA RF DEVICE
DATA