Z01xxxA SENSITIVE GATE TRIACS FEATURES IT(RMS) = 0.8A VDRM = 400V to 800V IGT ≤ 3mA to ≤ 25mA A1 G A2 DESCRIPTION The Z01xxxA series of triacs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where gate high sensitivity is required. TO92 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2 t dI/dt Tstg Tj Tl Symbol VDRM VRRM January 1995 Parameter Value Unit Tl= 70 °C 0.8 A Non repetitive surge peak on-state current (Tj initial = 25°C ) tp = 8.3 ms 8.5 A tp = 10 ms 8 I2t Value for fusing tp = 10 ms 0.32 A2s Critical rate of rise of on-state current diG /dt = 0.1 A/µs. IG = 50 mA Repetitive F = 50 Hz 10 A/µs Non Repetitive 50 RMS on-state current (360° conduction angle) Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 2mm from case °C 260 °C Voltage Parameter Repetitive peak off-state voltage Tj = 125°C - 40, + 150 - 40, + 125 Unit D M S N 400 600 700 800 V 1/5 Z01xxxA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 150 °C/W Rth(j-l) Junction to leads for D.C 80 °C/W Rth(j-l) Junction to leads for A.C 360° conduction angle (F=50Hz) 60 °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.1 W PGM = 2 W (tp = 20 µs) IGM = 1 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=140Ω Sensitivity Quadrant Tj= 25°C Unit 03 07 09 10 I-II-III MAX 3 5 10 25 IV MAX 5 7 10 25 mA VGT VD=12V (DC) RL=140Ω Tj= 25°C I-II-III-IV MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj= 125°C I-II-III-IV MIN 0.2 V tgt VD=VDRM IG = 40mA IT = 1.1A dIG/dt = 0.5A/µs Tj= 25°C I-II-III-IV TYP 2 µs IH * IT= 50 mA Gate open Tj= 25°C IG= 1.2 IGT Tj= 25°C IL MAX 7 10 10 25 mA I-III-IV TYP 7 10 10 25 mA II TYP 14 20 20 50 VTM * ITM= 1.1A tp= 380µs Tj= 25°C MAX 1.5 V IDRM IRRM VD = VDRM VR = VRRM Tj= 25°C MAX 10 µA Tj= 110°C MAX 200 Tj= 110°C MIN 10 20 50 TYP 20 50 150 400 dV/dt * (dV/dt)c * VD=67%VDRM Gate open (dI/dt)c = 0.35 A/ms Tj= 110°C MIN TYP 2 1 1 * For either polarity of electrode A2 voltage with reference to electrode A1 ORDERING INFORMATION Z 01 07 M A PACKAGE : A = TO92 TRIAC TOP GLASS CURRENT SENSITIVITY 2/5 VOLTAGE 100 5 V/µs V/µs Z01xxxA Fig.1 : Maximum RMS power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tlead). Tlead (o C) P (W) P(W) 1 1 180 -65 Rth(j-l) Rth(j-a) O o = 180 0.8 0.8 o = 120 -85 o 0.6 0.6 = 90 -95 o = 60 0.4 = 30 0.4 o -105 0.2 I 0 0 0.1 -75 0.2 0.3 0.4 0.5 T(RMS) 0.6 0.2 (A) -115 Tamb (oC) 0.7 0 0 0.8 Fig.3 : RMS on-state current versus case temperature. 20 40 60 80 100 -125 140 120 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) I T(RMS) (A) 1.00 1 0.8 0.6 o = 180 0.10 0.4 0.2 Tlead( o C) 0 0 tp (s) 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] 1E-2 1E-1 1 E+0 1 E+1 1E +2 5 E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 7 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.01 1E-3 o Tj initial = 25 C 6 5 Igt 4 3 Ih 2 1 Number of cycles Tj(oC) -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/5 Z01xxxA Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ≤ 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). I TSM (A). I2 t (A2 s) I TM (A) 100 10 Tj initial = 25oC Tj initial o 25 C 10 I TSM 1 1 Tj max Tj max Vto =0.95V Rt =0.42 0 I2 t VTM (V) tp(ms) 0.1 1 10 4/5 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 Z01xxxA PACKAGE MECHANICAL DATA TO92 (Plastic) REF. A a B A DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. 1.35 0.053 B C C D F D E E F a 4.7 2.54 0.185 0.100 4.4 4.8 12.7 0.173 0.189 0.500 3.7 0.146 0.45 0.017 Marking : type number Weight : 0.2 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5