STMICROELECTRONICS T1020-600W

T1020-600W
T1030-600W
®
SNUBBERLESS TRIAC
FEATURES
■
■
■
■
■
ITRMS = 10 A
VDRM = VRRM = 600V
EXCELLENT SWITCHING PERFORMANCES
INSULATING VOLTAGE = 1500V(RMS)
U.L. RECOGNIZED : E81734
A2
DESCRIPTION
The T1020-600W and 1030-600W triacs use high
performance glass passivated chip technology,
housed in a fully molded plastic ISOWATT220AB
package.
The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on
inductive and resistive loads.
A1
G
G
A1
A2
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
Parameter
Value
Unit
Tc= 90°C
10
A
tp = 16.7 ms
(1 cycle, 60 Hz)
110
A
tp = 10 ms
(1/2 cycle, 50 Hz)
125
I2t Value (half-cycle, 50 Hz)
tp = 10 ms
78
A2s
Critical rate of rise of on-state current
Gate supply : IG = 500 mA dIG /dt = 1 A/µs.
Repetitive
F = 50 Hz
20
A/µs
Non Repetitive
100
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
(Tj initial = 25°C )
Storage temperature range
Operating junction temperature range
Symbol
VDRM
VRRM
Parameter
Repetitive peak off-state voltage
Tj = 125°C
September 2001 - Ed: 1A
- 40 to + 150
- 40 to + 125
°C
Value
Unit
600
V
1/5
T1020-600W / 1030-600W
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
50
°C/W
Rth(j-c)
Junction to case for A.C (360° conduction angle)
3.0
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 100 mW PGM = 2 W (tp = 20 µs)
IGM = 1 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
IGT
Test Conditions
VD=12V (DC) RL=33Ω
Quadrant
Tj= 25°C
I-II-III
MAX
T1020
T1030
Unit
20
30
mA
VGT
VD=12V (DC) RL=33Ω
Tj= 25°C
I-II-III
MAX
1.5
V
VGD
VD=VDRM RL=3.3kΩ
Tj= 125°C
I-II-III
MIN
0.2
V
tgt
IG=500mA
VD=VDRM
dlG/dt= 3Aµs
Tj= 25°C
I-II-III
TYP
2
µs
IH *
IT= 100mA
Tj= 25°C
MAX
Gate open
35
50
VTM *
ITM= 14A tp= 380µs
Tj= 25°C
MAX
1.5
V
IDRM
IRRM
VDRM rated
VRRM rated
Tj= 25°C
MAX
10
µA
Tj= 125°C
MAX
2
mA
dV/dt *
Linear slope up to
Gate open
VD=67%VDRM
Tj= 125°C
MIN
200
300
V/µs
(dV/dt)c *
(dI/dt)c = 5.3 A/ms (see note)
Tj= 125°C
MIN
10
20
V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : In usual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use
a snuber R-C network accross T1020W / T1030W triacs.
2/5
T1020-600W / 1030-600W
Fig.1 : Maximum power dissipation versus RMS
on-state current.
Fig.2 : Correlation between maximum power dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
Tcase (oC)
P (W)
P(W)
14
180
O
= 180
12
= 120
10
= 60
6
= 30
o
Rth = 0 o C/W
o
2.5 C/W
o
5 C/W
7 o C/W
12
o
10
o
= 90
8
14
-105
6
o
4
2
2
3
4
5
6
7
8
9
10
Fig.3 : RMS on-state current versus case temperature.
I
T(RMS)
-115
2
I T(RMS) (A)
1
o
Tamb ( C)
-125
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Thermal transient impedance junction to
case and junction to ambient versus pulse duration.
Zth/Rth
(A)
1
12
Zth(j-c)
10
o
0.1
= 180
8
Zth(j-a)
6
4
0.01
2
o
Tcase( C)
0
-95
8
o
4
0
0
-85
0
10
20
30
40
50
60
tp(s)
70
80
90 100 110 120 130
Fig.5 : Relative variation of gate trigger current
and holding current versus junction temperature.
Igt[Tj]
o
Igt[Tj=25 C]
Ih[Tj]
Ih[Tj=25 o C]
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITSM(A)
120
2.6
o
Tj initial = 25 C
2.4
100
2.2
2.0
80
Igt
1.8
1.6
1.4
60
Ih
1.2
40
1.0
0.8
20
0.6
0.4
Number of cycles
Tj(oC)
-40
-20
0
20
40
60
80
100
120
140
0
1
10
100
1000
3/5
T1020-600W / 1030-600W
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp  10ms, and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
I TSM (A). I2 t (A2 s)
I TM (A)
1000
1000
Tj initial = 25 oC
I TSM
Tj initial
o
25 C
I2 t
100
100
10
10
Tj max
Vto =0.9V
Rt =0.038
Tj max
VTM (V)
tp(ms)
1
1
4/5
10
1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
T1020-600W / 1030-600W
PACKAGE MECHANICAL DATA
ISOWATT220AB
DIMENSIONS
REF.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
B
2.50
2.70
0.098
0.106
D
2.50
2.75
0.098
0.108
E
0.40
0.70
0.016
0.028
F
0.75
1.00
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.40
2.70
0.094
0.106
H
10.00
10.40
0.394
0.409
L3
■
■
■
■
Inches
Min.
L2
■
Millimeters
16.00 typ.
28.60
30.60
0.630 typ.
1.125
1.205
L4
9.80
10.60
0.386
0.417
L6
15.90
16.40
0.626
0.646
L7
9.00
9.30
0.354
0.366
Diam
3.00
3.20
0.118
0.126
Cooling method: C
Marking: Type number
Weight: 2.1 g
Recommended torque value: 0.55 m.N.
Maximum torque value: 0.70 m.N.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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