ETC BC856ALT1/D

BC856ALT1 Series
Preferred Devices
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
–65
–45
–30
V
Collector-Base Voltage
VCBO
–80
–50
–30
V
Emitter–Base Voltage
VEBO
–5.0
V
IC
–100
mAdc
Symbol
Max
Unit
Rating
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
Collector Current – Continuous
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COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,
(Note 1.) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
MARKING DIAGRAM
3
PD
RJA
225
1.8
mW
mW/°C
556
°C/W
PD
RJA
300
2.4
mW
mW/°C
417
°C/W
3
1
xx
2
SOT–23
CASE 318
STYLE 6
1
xx
2
= Device Code
= (See Table Below)
ORDERING INFORMATION
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
–55 to
+150
°C
Device
Package Mark
Shipping
BC856ALT1 SOT–23
3A
3000/Tape & Reel
BC856BLT1 SOT–23
3B
3000/Tape & Reel
BC857ALT1 SOT–23
3E
3000/Tape & Reel
BC857BLT1 SOT–23
3F
3000/Tape & Reel
BC858ALT1 SOT–23
3J
3000/Tape & Reel
BC858BLT1 SOT–23
3K
3000/Tape & Reel
BC858CLT1 SOT–23
3L
3000/Tape & Reel
BC859BLT1 SOT–23
4B
3000/Tape & Reel
BC859CLT1 SOT–23
4C
3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 2
Publication Order Number:
BC856ALT1/D
BC856ALT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)CEO
–65
–45
–30
–
–
–
–
–
–
V
Collector–Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)CES
–80
–50
–30
–
–
–
–
–
–
V
Collector–Base Breakdown Voltage
(IC = –10 A)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)CBO
–80
–50
–30
–
–
–
–
–
–
V
Emitter–Base Breakdown Voltage
(IE = –1.0 A)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)EBO
–5.0
–5.0
–5.0
–
–
–
–
–
–
V
ICBO
–
–
–
–
–15
–4.0
nA
µA
hFE
–
–
–
90
150
270
–
–
–
–
125
220
420
180
290
520
250
475
800
–
–
–
–
–0.3
–0.65
–
–
–0.7
–0.9
–
–
–0.6
–
–
–
–0.75
–0.82
fT
100
–
–
MHz
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
Cob
–
–
4.5
pF
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
BC856, BC857, BC858 Series
BC859 Series
NF
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current (VCB = –30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µA, VCE = –5.0 V)
(IC = –2.0 mA, VCE = –5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC858C, BC859C
Collector–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VBE(sat)
Base–Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
VBE(on)
V
V
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
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2
dB
–
–
–
–
10
4.0
BC856ALT1 Series
BC857/BC858/BC859
-1.0
1.5
TA = 25°C
-0.9
VCE = -10 V
TA = 25°C
-0.8
1.0
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
0.7
0.5
-0.7
VBE(on) @ VCE = -10 V
-0.6
-0.5
-0.4
-0.3
-0.2
0.3
VCE(sat) @ IC/IB = 10
-0.1
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
IC, COLLECTOR CURRENT (mAdc)
0
-0.1 -0.2
-100 -200
TA = 25°C
-1.6
-1.2
IC =
-10 mA
IC = -50 mA
IC = -200 mA
IC = -100 mA
IC = -20 mA
-0.4
-0.02
1.6
2.0
2.4
2.8
-10 -20
-0.1
-1.0
IB, BASE CURRENT (mA)
-0.2
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Cib
TA = 25°C
5.0
Cob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-10
-1.0
IC, COLLECTOR CURRENT (mA)
-100
Figure 4. Base–Emitter Temperature Coefficient
10
7.0
-55°C to +125°C
1.2
Figure 3. Collector Saturation Region
C, CAPACITANCE (pF)
-100
-50
1.0
-2.0
0
-0.5 -1.0 -2.0
-5.0 -10 -20
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
Figure 1. Normalized DC Current Gain
-0.8
VBE(sat) @ IC/IB = 10
-20 -30 -40
400
300
200
150
VCE = -10 V
TA = 25°C
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
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BC856ALT1 Series
BC856
TJ = 25°C
VCE = -5.0 V
TA = 25°C
-0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
-1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
-0.6
VBE @ VCE = -5.0 V
-0.4
-0.2
0.2
VCE(sat) @ IC/IB = 10
0
-0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (AMP)
-0.1 -0.2
-0.5
-50 -100 -200
-5.0 -10 -20
-1.0 -2.0
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
-2.0
-1.6
-1.2
IC =
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-0.8
-0.4
TJ = 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
IB, BASE CURRENT (mA)
-5.0
-10
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
-20
-1.0
-1.4
-1.8
-2.6
-3.0
-0.2
20
Cib
10
8.0
6.0
Cob
4.0
2.0
-0.1 -0.2
-0.5
-1.0 -2.0
-5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
-0.5 -1.0
-50
-2.0
-5.0 -10 -20
IC, COLLECTOR CURRENT (mA)
-100 -200
Figure 10. Base–Emitter Temperature Coefficient
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
-55°C to 125°C
-2.2
Figure 9. Collector Saturation Region
40
θVB for VBE
VCE = -5.0 V
500
200
100
50
20
-100
-1.0
-10
IC, COLLECTOR CURRENT (mA)
-50 -100
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
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4
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
BC856ALT1 Series
1.0
0.7
0.5
0.3
D = 0.5
0.2
0.2
0.1
0.07
0.05
0.1
0.05
SINGLE PULSE
SINGLE PULSE
t1
t2
0.03
DUTY CYCLE, D = t1/t2
0.02
0.01
0.1
ZθJC(t) = r(t) RθJC
RθJC = 83.3°C/W MAX
ZθJA(t) = r(t) RθJA
RθJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
0.2
0.5
1.0
2.0
10
5.0
20
t, TIME (ms)
50
100
200
500
1.0k
2.0k
5.0k 10k
Figure 13. Thermal Response
-200
1s
The safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
3 ms
IC, COLLECTOR CURRENT (mA)
-100
-50
-10
-5.0
-2.0
-1.0
TA = 25°C
TJ = 25°C
BC558, BC559
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
-10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
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5
BC856ALT1 Series
INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT-23 POWER DISSIPATION
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
The power dissipation of the SOT-23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient; and the operating
temperature, TA. Using the values provided on the data
sheet, PD can be calculated as follows.
PD =
PD = 150°C – 25°C = 225 milliwatts
556°C/W
The 556°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 225 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, a power dissipation of 400 milliwatts can
be achieved using the same footprint.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
SOLDERING PRECAUTIONS
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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BC856ALT1 Series
PACKAGE DIMENSIONS
SOT–23
TO–236AB
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
1
V
B S
2
G
C
D
H
J
K
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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7
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
BC856ALT1 Series
Thermal Clad is a registered trademark of the Bergquist Company
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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BC856ALT1/D