ETC BCW69LT1/D

ON Semiconductor
BCW69LT1
BCW70LT1
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–45
Vdc
Emitter–Base Voltage
VEBO
–5.0
Vdc
IC
–100
mAdc
Collector Current — Continuous
3
1
DEVICE MARKING
2
BCW69LT1 = H1; BCW70LT1 = H2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RθJA
556
°C/W
PD
300
mW
2.4
mW/°C
RθJA
417
°C/W
TJ, Tstg
–55 to +150
°C
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0)
V(BR)CEO
–45
—
Vdc
Collector–Emitter Breakdown Voltage (IC = –100 µAdc, VEB = 0)
V(BR)CES
–50
—
Vdc
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
—
—
–100
–10
nAdc
µAdc
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = –20 Vdc, IE = 0)
(VCB = –20 Vdc, IE = 0, TA = 100°C)
ICBO
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
1
Publication Order Number:
BCW689LT1/D
BCW69LT1 BCW70LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Max
120
215
260
500
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
hFE
—
BCW69
BCW70
Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc)
VCE(sat)
—
–0.3
Vdc
Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc)
VBE(on)
–0.6
–0.75
Vdc
Cobo
—
7.0
pF
NF
—
10
dB
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(IE = 0, VCB = –10 Vdc, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
TYPICAL NOISE CHARACTERISTICS
(VCE = –5.0 Vdc, TA = 25°C)
10
7.0
IC = 10 µA
5.0
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
30 µA
3.0
100 µA
300 µA
1.0 mA
2.0
IC = 1.0 mA
3.0
2.0
300 µA
1.0
0.7
0.5
100 µA
0.3
30 µA
0.2
1.0
10
20
50
100 200
500 1.0k
f, FREQUENCY (Hz)
2.0k
5.0k
0.1
10k
BANDWIDTH = 1.0 Hz
RS ≈ ∞
10 µA
10
Figure 1. Noise Voltage
20
50
100 200
500 1.0k 2.0k
f, FREQUENCY (Hz)
Figure 2. Noise Current
http://onsemi.com
2
5.0k
10k
BCW69LT1 BCW70LT1
NOISE FIGURE CONTOURS
1.0M
500k
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
200k
100k
50k
200k
100k
50k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
200
100
1.0M
500k
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
(VCE = –5.0 Vdc, TA = 25°C)
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
500 700 1.0k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
200
100
2.0 dB
3.0 dB
5.0 dB
10
20
RS , SOURCE RESISTANCE (OHMS)
Figure 3. Narrow Band, 100 Hz
1.0M
500k
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
500 700 1.0k
Figure 4. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is Defined as:
20k
10k
NF 20 log10
0.5 dB
5.0k
2.0k
1.0k
500
200
100
30
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10–23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
1.0 dB
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
2 2 12
S In RS en2 4KTR
4KTRS
500 700 1.0k
IC, COLLECTOR CURRENT (µA)
Figure 5. Wideband
http://onsemi.com
3
BCW69LT1 BCW70LT1
1.0
100
TA = 25°C
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL STATIC CHARACTERISTICS
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10
TA = 25°C
PULSE WIDTH = 300 µs
80 DUTY CYCLE ≤ 2.0%
300 µA
200 µA
150 µA
40
100 µA
20
50 µA
0
5.0
10
15
20
25
30
35
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
VCE(sat) @ IC/IB = 10
0.1
0.2
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
40
Figure 7. Collector Characteristics
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 6. Collector Saturation Region
1.4
250 µA
60
0
20
IB = 400 µA
350 µA
50
100
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
0
*VC for VCE(sat)
25°C to 125°C
-55°C to 25°C
0.8
25°C to 125°C
1.6
2.4
0.1
Figure 8. “On” Voltages
VB for VBE
0.2
-55°C to 25°C
0.5
1.0 2.0
5.0
10 20
IC, COLLECTOR CURRENT (mA)
Figure 9. Temperature Coefficients
http://onsemi.com
4
50
100
BCW69LT1 BCW70LT1
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
20
50 70
20 30
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
3.0
tf
30
td @ VBE(off) = 0.5 V
2.0
100
70
50
10
-1.0
100
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
IC, COLLECTOR CURRENT (mA)
Figure 10. Turn–On Time
-50 -70 -100
Figure 11. Turn–Off Time
500
10
TJ = 25°C
C, CAPACITANCE (pF)
5.0 V
200
TJ = 25°C
7.0
VCE = 20 V
300
100
Cib
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
f,
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
VCC = -3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Current–Gain — Bandwidth Product
Figure 13. Capacitance
1.0
0.7
0.5
20
50
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.03
0.02
10
FIGURE 16
0.05
P(pk)
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200
Figure 14. Thermal Response
http://onsemi.com
5
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
ZθJA(t) = r(t) • RθJA
TJ(pk) – TA = P(pk) ZθJA(t)
500 1.0k 2.0k
5.0k 10k 20k
50k100k
BCW69LT1 BCW70LT1
IC, COLLECTOR CURRENT (nA)
104
103
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
VCC = 30 V
A train of periodical power pulses can be represented by the model
as shown in Figure 16. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 14 was calculated for various duty cycles.
To find ZθJA(t), multiply the value obtained from Figure 14 by the
steady state value RθJA.
ICEO
102
101
ICBO
AND
ICEX @ VBE(off) = 3.0 V
100
Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
10-1
10-2
-40
-20
0
The peak rise in junction temperature is therefore
∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
+20 +40 +60 +80 +100 +120 +140 +160
For more information, see AN–569.
TJ, JUNCTION TEMPERATURE (°C)
Figure 15. Typical Collector Leakage Current
http://onsemi.com
6
BCW69LT1 BCW70LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from the
device junction to ambient, and the operating temperature,
TA. Using the values provided on the data sheet for the
SOT–23 package, PD can be calculated as follows:
PD =
•
•
TJ(max) – TA
RθJA
•
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
•
= 225 milliwatts
•
The 556°C/W for the SOT–23 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts.
There are other alternatives to achieving higher power
dissipation from the SOT–23 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, an aluminum core board, the power
dissipation can be doubled using the same footprint.
•
•
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and soldering
should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
http://onsemi.com
7
BCW69LT1 BCW70LT1
PACKAGE DIMENSIONS
SOT–23 (TO–236)
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
1
V
B S
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
Thermal Clad is a trademark of the Bergquist Company
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: [email protected]
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: [email protected]
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: [email protected]
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: [email protected]
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: [email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
For additional information, please contact your local
Sales Representative.
http://onsemi.com
8
BCW69LT1/D