ETC C1232

®
ISO 9001 Registered
Process C1232
CMOS 1.2µm
EEPROM with Lateral PNP
Electrical Characteristics
T=25oC Unless otherwise noted
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Saturation Current
Punch Through Voltage
Poly Field Threshold
Symbol
VTN
γN
βN
IDSATN
BVDSSN
VTFP(N)
Minimum
0.30
0.35
64
16
5
8
Typical
0.475
0.45
78
25
Maximum
0.65
0.55
92
40
Unit
V
V1/2
µA/V2
mA
V
V
Comments
100x10µm
100x100µm
100x100µm
100x1.5µm
N-Channel Native Transistor Symbol
Threshold Voltage
VTZBN
γZBN
Body Factor
Saturation Current
IDSATN
Conduction Factor
βZBN
Minimum
– 0.20
0.30
13
45
Typical
0.37
0.45
15.7
55
Maximum
0.52
0.60
18.9
65
Unit
V
V1/2
mA
µA/V2
Comments
100x2.5µm
100x2.5µm
100x2.5µm
100x100µm
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Saturation Current
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VTP
γP
βP
IDSATP
BVDSSP
VTFP(P)
Minimum
– 0.65
0.5
20
–6
–5
–8
Typical
– 0.475
0.6
25
–10
Maximum
0.30
0.7
30
–16
Unit
V
V1/2
µA/V2
mA
V
V
Comments
100x1.2µm
100x1.2µm
100x100µm
100x1.5µm
EECMOS Characteristics
Tunnel Oxide Thickness
Interpoly Oxide Thickness
Buried N+ Sheet Res.
Initial Program/Erase Window
Unprog. Memory Threshold
Endurance
Programming Voltage
Symbol
TTUNLOX
TP1P2
ρBN+
Minimum
84
340
200
Typical
88
390
300
3.0
3.0
Maximum
92
440
400
Comments
14
17
Unit
nm
nm
Ω/o
V
V
Cycles
V
Lateral PNP
Beta
Early Voltage
Symbol
HFE
VAP
Typical
35
TBD
Maximum
100
Unit
Comments
© IMP, Inc.
VT
VPP
10,000
12
Minimum
10
V
81
Process C1232
Electrical Characteristics
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Field Oxide Thickness
Gate Poly Sheet Res.
Bottom Poly Sheet Res.
High Resistance Poly
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
Symbol
ρN-well(f)
ρN+
xjN+
ρP+
xjP+
TGOX
TFIELD
ρPOLY2
ρPOLY1
ρPOLYHI
ρM1
ρM2
TPASS
Minimum
1.2
20
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-1 to Silicon
Metal-2 to Metal-1
Poly-1 to Poly-2
Symbol
COX
CM1P
CM1S
CMM
CP1P1
Minimum
1.28
60
22.5
25
24
1.5
19
Typical
20
35
0.35
110
0.35
25.0
700
35
32
2.0
50
25
200+900
Maximum
2.8
50
Typical
1.38
0.057
0.028
0.035
0.86
Maximum
1.58
160
27.5
45
40
2.5
32
Unit
KΩ/o
Ω/o
µm
Ω/o
µm
nm
nm
Ω/o
Ω/o
kΩ/o
mΩ/o
mΩ/o
nm
Comments
n-well
Unit
fF/µm2
fF/µm2
fF/µm2
fF/µm2
fF/µm2
Comments
oxide+nit.
Physical Characteristics
Starting Material
P <100>
Starting Mat. Resistivity
25 - 50 Ω-cm
Epi Layer
P Type, 7 - 8.5 Ω-cm
with N+ Buried Layer
Operating Voltage
5V
Well Type
N-well
Metal Layers
2
Poly Layers
2
Contact Size
1.5x1.5µm
Via Size
1.5x1.5µm
Metal-1 Width/Space
2.5 / 1.5µm
Metal-2 Width/Space
2.5 / 1.5µm
Gate Poly Width/Space
1.5 / 2.0µm
Buried N+ Width/Space
2.5 / 1.75µm
High Poly Width/Space
N+/P+ Width/Space
N+ To P+ Space
Tunnel Oxide Width/Space
Tunnel Ox. Overlap Bot. Poly
Contact To Poly Space
Contact Overlap Of Diffusion
Contact Overlap Of Poly
Metal-1 Overlap Of Contact
Metal-1 Overlap Of Via
Metal-2 Overlap Of Via
Minimum Pad Opening
Minimum Pad-to-Pad Spacing
Minimum Pad Pitch
1.5 / 1.5µm
2.0 / 2.0µm
9.0µm
1.5 / 1.5µm
1.0µm
1.5µm
1.0µm
1.0µm
1.0µm
1.0µm
1.0µm
65x65µm
5.0µm
80.0µm
Special Feature of C1232 Process: EEPROM process with high resistivity poly resistors
and native n-channel devices.
82
C1232-4-98