® ISO 9001 Registered Process C1015 CMOS 1.0µm Analog Mixed Mode Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Minimum 0.65 0.72 40.0 0.70 P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTP γP βP LeffP ∆WP BVDSSP VTFP(P) Minimum –1.3 0.46 12.5 0.72 Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Field Oxide Thickness Gate Poly Sheet Res. Top Poly Sheet Resistance Metal-1 Sheet Resistance Metal-2 Sheet Resistance Passivation Thickness Symbol ρN-well(f) ρN+ xjN+ ρP+ xjP+ TGOX TFIELD ρPOLY1 ρPOLY2 ρM1 ρM2 TPASS Minimum 0.65 27 Capacitance Gate Oxide Metal-1 to Poly1 Metal-1 to Silicon Metal-2 to Metal-1 Poly-1 to Poly-2 Symbol COX CM1P CM1S CMM CP1P2 Minimum © Daily Silver IMP Typical 0.85 0.82 43.5 0.90 0.25 Maximum 1.05 0.92 47.0 1.10 Unit V V1/2 µA/V2 µm µm V V Comments 25 x 1.0µm 25 x 1.0µm 25 x 25µm 25 x 1.0µm Per side Typical –1.1 0.56 14.0 0.97 0.3 Maximum –0.9 0.66 15.5 1.22 Unit V V1/2 µA/V2 µm µm V V Comments 25 x 1.0µm 25 x 1.0µm 25 x 25µm 25 x 1.0µm Per side Typical 0.80 37 0.25 85 0.3 20.0 580 32 23 45 25 200+900 Maximum 1.10 47 Unit KΩ/o Ω/o µm Ω/o µm nm nm Ω/o Ω/o mΩ/o mΩ/o nm Comments n-well Typical 1.73 0.046 0.028 0.035 0.5 Maximum 8 8 –8 –8 65 18.7 25 18 0.42 110 21.3 39 28 0.57 Unit fF/µm2 fF/µm2 fF/µm2 fF/µm2 fF/µm2 oxide+nit. Comments 21 Process C1015 Physical Characteristics Starting Material Starting Mat. Resistivity Typ. Operating Voltage Well Type Metal Layers Poly Layers Contact Size Via Size Metal-1 Width/Space Metal-2 Width/Space Gate Poly Width/Space P <100> 15 - 25 Ω-cm 5V N-well 2 2 1.2x1.2µm 1.2x1.2µm 1.4 / 1.2µm 2.5 / 1.5µm 1.5 / 2.0µm N+/P+ Width/Space N+ To P+ Space Contact To Poly Space Contact Overlap Of Diffusion Contact Overlap Of Poly Metal-1 Overlap Of Contact Metal-1 Overlap Of Via Metal-2 Overlap Of Via Minimum Pad Opening Minimum Pad-to-Pad Spacing Minimum Pad Pitch 1.6 / 1.6µm 7.0µm 1.0µm 1.0µm 0.8µm 0.8µm 0.8µm 0.8µm 65x65µm 5.0µm 80.0µm Special Feature of C1015 Process: CMOS 1.0 µm analog technology with 2 levels of metal and Poly-to-Poly capacitors for analog applications. 22 C1015