EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Product Preview Dual NPN General Purpose Amplifier Transistor http://onsemi.com This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium. • • • • • DUAL NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT Reduces Board Space High hFE, 210 −460 (Typical) Low VCE(sat), < 0.5 V Available in 7 inch Tape and Reel Pb−free Solder Plating (6) (5) (4) MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc Collector Current − Continuous Tr2 Tr1 (1) (2) THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Characteristic (Both Junctions Heated) Max 357 (Note 1) 2.9 (Note 1) mW mW/°C RJA 350 (Note 1) °C/W Symbol Max Unit 500 (Note 1) 4.0 (Note 1) mW mW/°C PD Thermal Resistance − Junction-to-Ambient RJA 250 (Note 1) °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR−4 @ Minimum Pad This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2004 6 Unit PD Total Device Dissipation TA = 25°C Derate above 25°C January, 2004 − Rev. P1 MARKING DIAGRAM 6 Symbol 1 (3) 1 SOT−563 CASE 463A 3X D 1 3X = Specific Device Code D = Date Code ORDERING INFORMATION Device Package Shipping† EMX1DXV6T1 SOT−563 4 mm pitch 4000/Tape & Reel EMX1DXV6T5 SOT−563 2 mm pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: EMX1DXV6T1/D EMX1DXV6T1, EMX1DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 50 Adc, IE = 0) V(BR)CBO 60 − − Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 − − Vdc Emitter-Base Breakdown Voltage (IE = 50 Adc, IE = 0) V(BR)EBO 7.0 − − Vdc ICBO − − 0.5 A IEBO − − 0.5 Collector-Base Cutoff Current (VCB = 60 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 7.0 Vdc, IB = 0) Collector-Emitter Saturation Voltage(2) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Gain(2) DC Current (VCE = 6.0 Vdc, IC = 1.0 mAdc) − − 0.4 120 − 560 fT − 180 − MHz COB − 2.0 − pF hFE Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz) − 2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 3. Pulse Test: Pulse Width ≤ 300 s, D.C. ≤ 2%. http://onsemi.com 2 A Vdc EMX1DXV6T1, EMX1DXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS 1000 160 A TA = 25°C 50 120 A 40 100 A 30 80 A 60 A 20 TA = − 25°C 100 40 A 10 0 IB = 20 A 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) 10 0.1 8 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 2. DC Current Gain 2 900 TA = 25°C 800 COLLECTOR VOLTAGE (mV) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. IC − VCE 1.5 1 0.5 700 600 500 400 TA = 25°C VCE = 5 V 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0 0.2 100 1 5 10 20 40 60 80 100 150 200 Figure 4. On Voltage 20 7 6 Cob, CAPACITANCE (pF) 18 16 14 12 10 0.5 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Cib, INPUT CAPACITANCE (pF) VCE = 10 V TA = 25°C TA = 75°C 140 A DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 60 5 4 3 2 0 1 2 3 1 4 0 10 20 VEB (V) VCB (V) Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 3 30 40 EMX1DXV6T1, EMX1DXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE O A −X− 5 6 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C K MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 4 B −Y− 3 D G J 5 PL 6 0.08 (0.003) STYLE 1: PIN 1. 2. 3. 4. 5. 6. DIM A B C D G J K S S M X Y STYLE 2: PIN 1. 2. 3. 4. 5. 6. EMITTER 1 BASE 1 COLLECTOR 2 EMITTER 2 BASE 2 COLLECTOR 1 STYLE 3: PIN 1. 2. 3. 4. 5. 6. EMITTER 1 EMITTER2 BASE 2 COLLECTOR 2 BASE 1 COLLECTOR 1 CATHODE 1 CATHODE 1 ANODE/ANODE 2 CATHODE 2 CATHODE 2 ANODE/ANODE 1 STYLE 4: PIN 1. 2. 3. 4. 5. 6. INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 COLLECTOR COLLECTOR BASE EMITTER COLLECTOR COLLECTOR SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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