MITSUBISHI CM800E6C-66H

MITSUBISHI HVIGBT MODULES
CM800E6C-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM800E6C-66H
● IC ................................................................... 800A
● VCES ....................................................... 3300V
● Insulated Type
● 1-element in a Pack (for brake)
● AISiC Baseplate
APPLICATION
Traction drives, DC choppers, Dynamic braking choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
190 ±0.5
171 ±0.1
57 ±0.1
57 ±0.1
6 - M8 NUTS
57 ±0.1
C
C
K (C)
E
E
A (E)
20 –0.2
+0.1
C
C
CM
E
C
E
E
124 ±0.1
140 ±0.5
C
40 ±0.2
C
G
E
E
CIRCUIT DIAGRAM
G
20.25 ±0.2
8 - φ7 ±0.1 MOUNTING HOLES
41.25 ±0.3
screwing depth
min. 16.5
15 ±0.2
40 ±0.3
13 ±0.2
5.2 ±0.2
LABEL
29.5 ±0.5
61.5 ±0.3
28 +10
61.5 ±0.3
5 ±0.15
screwing depth
min. 7.7
79.4 ±0.3
38 +10
3 - M4 NUTS
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM(Note 2)
PC (Note 3)
Tj
Top
Tstg
Viso
tpsc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
Conditions
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
TC = 100°C
Pulse
(Note 1)
Pulse
TC = 25°C, IGBT part
(Note 1)
RMS, sinusoidal, f = 60Hz, t = 1min.
VCC = 2200V, VCES ≤ 3300V, VGE = 15V
Tj = 125°C
Ratings
Unit
3300
±20
800
1600
800
1600
9600
–40 ~ +150
–40 ~ +125
–40 ~ +125
6000
V
V
A
A
A
A
W
°C
°C
°C
V
10
µs
ELECTRICAL CHARACTERISTICS
Symbol
ICES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
Qg
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
V EC(Note 2) Emitter-collector voltage
td(on)
tr
Eon
td(off)
tf
Eoff
trr (Note 2)
Qrr (Note 2)
Erec (Note 2)
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
VF (Note 5) Forward voltage
trr (Note 5) Reverse recovery time
Qrr (Note 5) Reverse recovery charge
Erec (Note 5) Reverse recovery energy
Note 1.
2.
3.
4.
5.
VCE = VCES, VGE = 0V, Tj = 25°C
Min
—
Limits
Typ
—
Max
10
IC = 80mA, VCE = 10V, Tj = 25°C
5.0
6.0
7.0
V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.30
3.60
120
12.0
3.6
5.7
2.80
2.70
—
—
1.10
—
—
1.05
—
540
0.60
2.80
2.70
—
540
0.60
0.5
4.20
—
—
—
—
—
3.60
—
1.60
1.00
—
2.50
1.00
—
1.4
—
—
3.60
—
1.4
—
—
µA
Item
Conditions
VGE = VGES, VCE = 0V, Tj = 25°C
IC = 800A, VGE = 15V, Tj = 25°C
IC = 800A, VGE = 15V, Tj = 125°C
(Note 4)
(Note 4)
VCE = 10V, f = 100kHz
VGE = 0V, Tj = 25°C
VCC = 1650V, IC = 800A, VGE = 15V, Tj = 25°C
IE = 800A, VGE = 0V, Tj = 25°C
IE = 800A, VGE = 0V, Tj = 125°C
VCC = 1650V, IC = 800A, VGE = ±15V
RG(on) = 2.5Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 1650V, IC = 800A, VGE = ±15V
RG(off) = 2.5Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 1650V, IC = 800A, VGE = ±15V
RG(on) = 2.5Ω, Tj = 125°C, Ls = 100nH
Inductive load
IF = 800A, VGE = 0V, Tj = 25°C
IF = 800A, VGE = 0V, Tj = 125°C
VCC = 1650V, IC = 800A, VGE = ±15V
di/dt = 2600A/µs, Tj = 125°C, Ls = 100nH
Inductive load
(Note 4)
(Note 4)
(Note 4)
(Note 4)
Unit
mA
V
nF
nF
nF
µC
V
µs
µs
J/pulse
µs
µs
J/pulse
µs
µC
J/pulse
V
µs
µC
J/pulse
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Junction temperature (Tj) should not exceed Tjmax rating (150°C).
Pulse width and repetition rate should be such as to cause negligible temperature rise.
The symbols represent characteristics of the clamp diode (Clamp-Di).
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Item
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Junction to Case, Clamp-Di part
Case to Fin, λgrease = 1W/m·K
Min
—
—
—
—
Limits
Typ
—
—
—
8.0
Max
13.0
25.0
25.0
—
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Mounting torque
M
CTI
da
ds
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
LC-E(int)
Internal inductance
RC-E(int)
Internal lead resistance
—
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
Clamp-Di part
TC = 25°C, IGBT part
TC = 25°C, Clamp-Di part
Min
7.0
3.0
1.0
—
600
19.5
32.0
—
—
—
—
Limits
Typ
—
—
—
1.5
—
—
—
18
24
0.20
0.30
Max
13.0
6.0
2.0
—
—
—
—
—
—
—
—
Unit
N·m
kg
—
mm
mm
nH
mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
1600
1600
Tj = 125°C
VCE = 20V
1400
VGE = 20V
1200
VGE = 15V
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
1400
VGE = 12V
1000
800
VGE = 10V
600
400
1200
1000
800
600
400
VGE = 8V
200
0
1
2
3
4
5
0
6
Tj = 25°C
Tj = 125°C
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
6
12
6
VGE = 15V
EMITTER-COLLECTOR VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0
200
5
4
3
2
1
5
4
3
2
1
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
0
0
400
800
1200
1600
COLLECTOR CURRENT (A)
0
0
400
800
1200
1600
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
103
20
VGE = 0V, Tj = 25°C
f = 100kHz
7
5
VCC = 1650V, IC = 800A
Tj = 25°C
CAPACITANCE (nF)
2
GATE-EMITTER VOLTAGE (V)
3
Cies
102
7
5
3
2
101
Coes
7
5
3
16
12
8
4
Cres
2
100 -1
10
5 7 100
2 3
5 7 101
2 3
0
5 7 102
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
4
VCC = 1650V, VGE = ±15V
RG(on) = RG(off) = 2.5Ω
Tj = 125°C, Inductive load
VCC = 1650V, IC = 800A
VGE = ±15V
Tj = 125°C, Inductive load
Eon
2
1.5
Eoff
1
Erec
0.5
SWITCHING ENERGIES (J/pulse)
SWITCHING ENERGIES (J/pulse)
2.5
2 3
Eon
3
2
Eoff
1
Erec
0
0
400
800
1200
1600
COLLECTOR CURRENT (A)
0
0
5
10
15
20
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
102
7
5
102
VCC = 1650V, VGE = ±15V
RG(on) = RG(off) = 2.5Ω
Tj = 125°C, Inductive load
7
5
REVERSE RECOVERY TIME (µs)
3
SWITCHING TIMES (µs)
2
101
7
5
3
td(off)
2
td(on)
100
7
5
tr
3
tf
2
10-1 1
10
2 3
5 7 102
2 3
5 7 103
2 3
5 7 104
COLLECTOR CURRENT (A)
3
104
VCC = 1650V, VGE = ±15V
RG(on) = RG(off) = 2.5Ω
Tj = 125°C, Inductive load
7
5
3
2
2
101
103
7
5
7
5
lrr
3
3
2
2
100
102
7
5
7
5
trr
3
3
2
2
10-1 1
10
2 3
5 7 102
2 3
5 7 103
REVERSE RECOVERY CURRENT (A)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
101
2 3
5 7 104
EMITTER CURRENT (A)
NORMALIZED TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1.2
1.0
Single Pulse, TC = 25°C
Rth(j–c)Q = 13K/kW
Rth(j–c)R = 25K/kW
0.8
0.6
0.4
0.2
0 -3
10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101
TIME (s)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE
RECOVERY SAFE OPERATING AREA
(RRSOA)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
2500
2500
REVERSE RECOVERY CURRENT (A)
VCC ≤ 2200V, VGE = +/-15V
Tj = 125°C, RG(off) ≥ 2.5Ω
COLLECTOR CURRENT (A)
2000
1500
1000
500
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
VCC ≤ 2200V, di/dt ≤ 3600A/µs
Tj = 125°C
2000
1500
1000
500
0
0
1000
2000
3000
4000
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005