MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800DZ-34H ● IC ................................................................... 800A ● VCES ....................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 4 - M8 NUTS 57±0.25 C2 E1 C2 20 E1 G1 G2 E2 E2 C1 C1 E1 E2 C1 G1 C2 16 40 6 - M4 NUTS C1 140 30 CM 124±0.25 C2 E1 CIRCUIT DIAGRAM G2 18 6 - φ 7 MOUNTING HOLES 44 53 E2 57 5 55.2 35 11.85 11.5 LABEL 31.5 28 5 38 14 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Oct. 2002 MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Mass Conditions VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C, IGBT part Ratings 1700 ±20 800 1600 800 1600 5000 –40 ~ +150 –40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.0 (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Unit V V A A A A W °C °C V N·m N·m N·m kg ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. VCE = VCES, VGE = 0V Min — Limits Typ — Max 12 IC = 80mA, VCE = 10V 4.5 5.5 6.5 V VGE = VGES, VCE = 0V Tj = 25°C IC = 800A, VGE = 15V Tj = 125°C — — — — — — — — — — — — — — — — — — 2.80 3.20 72 9.0 3.6 6.6 — — — — 2.60 — 150 — — 0.020 0.5 3.64 — — — — — 1.60 2.00 2.70 0.80 3.38 2.70 — 0.025 0.043 — µA Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions (Note 4) VCE = 10V VGE = 0V VCC = 850V, IC = 800A, VGE = 15V VCC = 850V, IC = 800A VGE1 = VGE2 = 15V RG = 3.3Ω Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = –1600A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to fin, conductive grease applied (Per 1/2 module) Unit mA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (T j) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Oct. 2002 MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 1600 1600 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) Tj=25°C 1200 800 400 0 0 2 4 6 1200 800 400 Tj = 25°C Tj = 125°C 0 10 8 VCE=10V 0 4 8 12 16 20 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE=15V 4 3 2 1 Tj = 25°C Tj = 125°C 0 104 7 5 3 2 400 800 1200 8 6 4 2 0 4 8 12 16 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) Tj=25°C 102 7 5 3 2 0 Tj = 25°C COLLECTOR CURRENT IC (A) 103 7 5 3 2 101 10 0 1600 CAPACITANCE Cies, Coes, Cres (nF) 0 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE VEC (V) 103 7 5 3 2 20 VGE = 0V, Tj = 25°C Cies, Coes : f = 100kHz : f = 1MHz Cres 102 7 5 3 2 101 7 5 3 2 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Oct. 2002 MITSUBISHI HVIGBT MODULES CM800DZ-34H HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 100 7 5 3 2 10–1 7 5 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) REVERSE RECOVERY TIME trr (µs) 3 2 VCC = 850V, VGE = ±15V RG = 3.3Ω, Tj = 125°C Inductive load 5 7 102 101 7 5 3 2 2 3 5 7 103 2 3 5 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 850V, Tj = 125°C 3 3 Inductive load 2 2 VGE = ±15V, RG = 3.3Ω 101 7 5 103 7 5 3 2 100 7 5 3 2 5 7 102 2 3 5 7 103 2 3 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) Single Pulse TC = 25°C Rth(j – c) = 0.025K/W (Per 1/2 module) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) SWITCHING TIMES (µs) 5 HIGH POWER SWITCHING USE INSULATED TYPE 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) 101 7 5 3 2 5 102 7 5 REVERSE RECOVERY CURRENT Irr (A) 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Single Pulse TC = 25°C Rth(j – c) = 0.043K/W (Per 1/2 module) 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) VGE – GATE CHARGE (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 VCC = 850V IC = 800A 16 12 8 4 0 0 1000 2000 3000 4000 5000 GATE CHARGE QG (nC) Oct.2002