MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DB-34N ● IC ................................................................ 1200A ● VCES ....................................................... 1700V ● Insulated Type ● 2-element in a Pack ● Cu Baseplate ● Trench Gate IGBT : CSTBT™ ● Soft Reverse Recovery Diode APPLICATION Motor control, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130±0.5 57±0.25 57±0.25 4 - M8 NUTS 2(C2) 20±0.1 4(E1) 1 G2 140±0.5 3 C2 G1 124±0.25 2 30±0.2 4 E1 C1 E2 1(E2) 3(C1) E1 CIRCUIT DIAGRAM E2 C2 6 - φ 7 MOUNTING HOLES 16±0.2 18±0.2 40±0.2 53±0.2 44±0.2 57±0.2 55.2±0.3 11.85±0.2 5±0.2 35±0.2 11.5±0.2 14±0.2 5±0.2 screwing depth min. 7.7 screwing depth min. 16.5 LABEL 29.5±0.5 6 - M4 NUTS G2 28 +1 –0 C1 38 +1 –0 G1 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width Conditions VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 80°C Pulse (Note 1) Pulse TC = 25°C, IGBT part (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1200V, VCES ≤ 1700V, VGE = 15V Tj = 125°C Ratings Unit 1700 ±20 1200 2400 1200 2400 6900 –40 ~ +150 –40 ~ +125 –40 ~ +125 4000 V V A A A A W °C °C °C V 10 µs ELECTRICAL CHARACTERISTICS Symbol Cies Coes Cres Qg Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge VEC (Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Irr (Note 2) Qrr (Note 2) Erec (Note 2) Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy ICES VGE(th) IGES VCE(sat) Note 1. 2. 3. 4. VCE = VCES, VGE = 0V, Tj = 25°C Min — Limits Typ — Max 4 IC = 120mA, VCE = 10V, Tj = 25°C 6.0 7.0 8.0 V — — — — — — — — — — — — — — — — — — — — 2.15 2.40 176 9.6 2.8 6.8 2.60 2.30 1.00 0.40 380 1.20 0.30 360 1.00 560 300 220 0.5 2.80 — — — — — 3.30 — — — — — — — — — — — µA Item Conditions VGE = VGES, VCE = 0V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 125°C (Note 4) (Note 4) VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 850V, IC = 1200A, VGE = 15V, Tj = 25°C IE = 1200A, VGE = 0V, Tj = 25°C (Note 4) IE = 1200A, VGE = 0V, Tj = 125°C (Note 4) VCC = 850V, IC = 1200A, VGE = ±15V RG(on) = 1.3Ω, Tj = 125°C, Ls = 150nH Inductive load VCC = 850V, IC = 1200A, VGE = ±15V RG(off) = 3.3Ω, Tj = 125°C, Ls = 150nH Inductive load VCC = 850V, IC = 1200A, VGE = ±15V RG(on) = 1.3Ω, Tj = 125°C, Ls = 150nH Inductive load Unit mA V nF nF nF µC V µs µs mJ/pulse µs µs mJ/pulse µs A µC mJ/pulse Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part, 1/2 module Junction to Case, FWDi part, 1/2 module Case to Fin, λgrease = 1W/m·K, 1/2 module Min — — — Limits Typ — — 16.0 Max 18.0 40.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item M Mounting torque — CTI da ds LC-E(int) RC-E(int) Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part TC = 25°C Min 7.0 3.0 1.0 — 600 9.5 15.0 — — Limits Typ — — — 1.3 — — — 30 0.28 Max 20.0 6.0 3.0 — — — — — — Unit N·m kg — mm mm nH mΩ HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200DB-34N HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 2400 2400 Tj = 125°C 2000 2000 VGE = 12V VGE = 20V COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) VCE = 20V VGE = 15V 1600 VGE = 10V 1200 800 1600 1200 800 400 400 VGE = 8V 0 1 2 3 4 5 0 6 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 12 5 VGE = 15V EMITTER-COLLECTOR VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0 Tj = 25°C Tj = 125°C 4 3 2 1 4 3 2 1 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT (A) Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 2000 2400 EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200DB-34N HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VCC = 850V, IC = 1200A Tj = 25°C 7 5 3 CAPACITANCE (nF) GATE-EMITTER VOLTAGE (V) Cies 2 102 7 5 3 2 101 Coes 7 5 16 12 8 4 3 100 -1 10 1200 SWITCHING ENERGIES (mJ/pulse) Cres VGE = 0V, Tj = 25°C f = 100kHz 5 7 100 2 3 2 3 5 7 101 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2000 VCC = 850V, VGE = ±15V RG(on) = 1.3Ω, RG(off) = 3.3Ω Tj = 125°C, Inductive load 1000 0 5 7 102 2 3 VCC = 850V, IC = 1200A VGE = ±15V Tj = 125°C, Inductive load Eon 800 Eoff 600 400 Erec 200 SWITCHING ENERGIES (mJ/pulse) 2 Eon 1600 1200 800 Eoff 400 Erec 0 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT (A) 0 0 2 4 6 8 10 12 GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200DB-34N HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 7 5 500 VCC = 850V, VGE = ±15V RG(on) = 1.3Ω, RG(off) = 3.3Ω Tj = 125°C, Inductive load REVERSE RECOVERY CHARGE (µC) 101 3 SWITCHING TIMES (µs) 2 td(off) 100 td(on) 7 5 tr tf 3 2 10-1 7 5 3 VCC = 850V, VGE = ±15V RG(on) = 1.3Ω Tj = 125°C, Inductive load 400 Qrr 300 200 100 2 2 3 5 7 103 2 3 5 0 7 104 400 800 1200 1600 2000 2400 EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1.2 1.0 0 COLLECTOR CURRENT (A) 3000 Single Pulse, TC = 25°C Rth(j–c)Q = 18K/kW Rth(j–c)R = 40K/kW 0.8 0.6 0.4 0.2 VCC ≤ 1200V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 3.3Ω 2500 COLLECTOR CURRENT (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE 10-2 2 10 2000 1500 1000 500 Module Chip 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) 0 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005