MITSUBISHI HVIGBT MODULES CM800HA-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HA-34H ● IC ................................................................... 800A ● VCES ....................................................... 1700V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 4 - M8 NUTS 57±0.25 C C E E CM E G E 140 C 30 C 124±0.25 20 C E E CIRCUIT DIAGRAM G C 16.5 3 - M4 NUTS 2.5 6 - φ 7 MOUNTING HOLES 5 18.5 35 61.5 11 18 LABEL 31.5 28 38 5 14.5 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 MITSUBISHI HVIGBT MODULES CM800HA-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Mass Conditions Ratings Unit — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value 1700 ±20 800 1600 800 1600 8300 –40 ~ +150 –40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 V V A A A A W °C °C V N·m N·m N·m kg VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C, IGBT part (Note 1) (Note 1) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. VCE = V CES, V GE = 0V Min — Limits Typ — Max 16 IC = 80mA, VCE = 10V 4.5 5.5 6.5 V VGE = VGES , VCE = 0V Tj = 25°C IC = 800A, VGE = 15V Tj = 125°C — — — — — — — — — — — — — — — — — — 2.75 3.30 93 13.3 5.1 4.4 — — — — 2.40 — 135 — — 0.012 0.5 3.58 — — — — — 1.20 1.50 2.00 0.60 3.12 2.00 — 0.015 0.048 — µA Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = 10V VGE = 0V VCC = 850V, IC = 800A, V GE = 15V VCC = 850V, IC = 800A VGE1 = VGE2 = 15V RG = 2.5Ω Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = –1600A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Note 4) Unit mA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W Pulse width and repetition rate should be such that the device junction temp. (Tj ) does not exceed Tjmax rating. IE, VEC, t rr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj ) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 MITSUBISHI HVIGBT MODULES CM800HA-34H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1600 VGE = 12V VGE = 11V Tj = 25°C VGE = 14V VGE = 15V 1200 VGE = 20V VCE = 10V COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 1600 TRANSFER CHARACTERISTICS (TYPICAL) VGE = 13V VGE = 10V 800 VGE = 9V 400 VGE = 8V VGE = 7V 0 0 2 4 6 8 1200 800 400 Tj = 25°C Tj = 125°C 0 10 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 15V 4 3 2 1 Tj = 25°C Tj = 125°C 0 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 0 104 7 5 3 2 400 800 1200 1600 IC = 1600A 8 IC = 800A 6 4 2 IC = 320A 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) Tj = 25°C 102 7 5 3 2 0 Tj = 25°C COLLECTOR CURRENT IC (A) 103 7 5 3 2 101 10 0 CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE VEC (V) 103 7 VGE = 0V, Tj = 25°C 5 Cies, Coes : f = 100kHz 3 Cres : f = 1MHz 2 102 7 5 3 2 101 7 5 3 2 Cies Coes Cres 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2000 MITSUBISHI HVIGBT MODULES CM800HA-34H HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 100 7 5 td(off) td(on) 3 2 tr tf 10–1 7 5 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) REVERSE RECOVERY TIME trr (µs) VCC = 850V, VGE = ±15V 3 RG = 2.5Ω, Tj = 125°C 2 Inductive load 5 7 102 2 3 5 7 103 2 3 5 trr 100 7 5 103 7 5 Irr 3 2 10–1 7 5 3 2 5 7 102 2 3 5 7 103 2 3 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 101 7 Single Pulse 5 TC = 25°C 3 Rth(j – c) = 0.024°C/ W 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) SWITCHING TIMES (µs) 5 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 850V, Tj = 125°C 3 Inductive load 3 2 VGE = ±15V, RG = 2.5Ω 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) 5 102 7 5 REVERSE RECOVERY CURRENT Irr (A) HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 101 7 Single Pulse 5 TC = 25°C 3 Rth(j – c) = 0.060°C/ W 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) VGE – GATE CHARGE (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 VCC = 850V IC = 800A 16 12 8 4 0 0 2000 4000 6000 8000 10000 GATE CHARGE QG (nC) Feb. 2000