CHAMP CMT60N03G

CMT60N03G
N-CHANNEL Logic Level Power MOSFET
APPLICATION
FEATURES
‹
Buck Converter High Side Switch
‹
Low ON Resistance
‹
Other Applications
‹
Low Gate Charge
‹
Peak Current vs Pulse Width Curve
VDSS
RDS(ON) Typ.
ID
‹
Inductive Switching Curves
30V
10.8mΩ
50A
‹
Improved UIS Ruggedness
PIN CONFIGURATION
SYMBOL
TO-252
TO-263
Front View
Front View
D
SOURCE
DRAIN
GATE
D
G
1
2
3
S
G
1
2
S
N-Channel MOSFET
3
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDSS
30
V
ID
50
A
- Continuous Tc = 100℃, [email protected] (Note 2)
ID
Fig.3
- Pulsed Tc = 25℃, [email protected] (Note 3)
IDM
Fig.6
Gate-to-Source Voltage - Continue
VGS
±20
V
Total Power Dissipation
PD
52
W
Drain to Source Voltage (Note 1)
Drain to Current - Continuous Tc = 25℃, [email protected] (Note 2)
Derating Factor above 25℃
0.5
W/℃
dv/dt
3.0
V/ns
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
℃
Single Pulse Avalanche Energy L=1.1mH,ID=30 Amps
EAS
500
mJ
Maximum Lead Temperature for Soldering Purposes
TL
300
℃
TPKG
260
℃
IAS
Fig.8
Peak Diode Recovery dv/dt (Note 4)
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
THERMAL RESISTANCE
Symbol
RθJC
Parameter
Junction-to-case
RθJA
Junction-to-ambient
(PCB Mount)
Junction-to-ambient
RθJA
2006/10/11 Rev1.2
Min
Typ
Max
2.4
Units
℃/W
50
℃/W
62
℃/W
Test Conditions
Water cooled heatsink, PD adjusted for a peak junction
temperature of +150℃
Minimum pad area, 2-oz copper, FR-4 circuit board, double
sided
1 cubic foot chamber, free air
Champion Microelectronic Corporation
Page 1
CMT60N03G
N-CHANNEL Logic Level Power MOSFET
ORDERING INFORMATION
Part Number
Package
CMT60N03GN252
TO-252
CMT60N03GN263
TO-263
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT60N03G
Characteristic
Symbol
Min
VDSS
30
Typ
Max
Units
OFF Characteristics
Drain-to-Source Breakdown Voltage
V
(VGS = 0 V, ID = 250 μA)
Breakdown Voltage Temperature Coefficient, Fig.11
ΔVDSS/ΔTJ
27
mV/℃
(Reference to 25℃, ID = 250 μA)
Drain-to-Source Leakage Current
IDSS
μA
(VDS = 24 V, VGS = 0 V, TJ = 25℃)
1
(VDS = 24 V, VGS = 0 V, TJ = 125℃)
10
Gate-to-Source Forward Leakage
IGSS
100
nA
IGSS
-100
nA
3.0
V
(VGS = 20 V)
Gate-to-Source Reverse Leakage
(VGS = -20 V)
ON Characteristics
VGS(th)
Gate Threshold Voltage,Fig.12
1.0
(VDS = VGS, ID = 250 μA)
Static Drain-to-Source On-Resistance, Fig.9,10
(Note 5)
RDS(on)
(VGS = 10 V, ID = 15A)
mΩ
10.8
(VGS = 4.5 V, ID = 12A)
12.5
15.4
Forward Transconductance (VDS = 15 V, ID = 12A)
(Note 5)
gFS
28
S
(VDS = 15 V, VGS = 0 V,
Ciss
1520
f = 1.0 MHz)
Coss
314
pF
pF
Fig.14
Crss
152
pF
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (VGS = 10 V)
Total Gate Charge (VGS = 4.5 V)
Gate-to-Source Charge
Qg
27.9
35
(VDS = 15 V, ID = 12 A) (Note 6)
Qg
14
19
Fig.15
Qgs
4.9
nC
Qgd
4.3
nC
td(on)
10
tr
3.4
ns
ns
td(off)
36
ns
tf
6.0
ns
td(on)
16
tr
7.2
ns
ns
td(off)
34
ns
tf
14
ns
Gate-to-Drain Charge
nC
nC
Resistive Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 15 V, ID = 12 A,
VGS = 10 V,
RG = 1.0Ω) (Note 6)
(VDD = 15 V, ID = 12 A,
VGS = 4.5V,
RG = 1.0Ω) (Note 6)
Source-Drain Diode Characteristics
Continuous Source Current (Body
Diode Fig.16)
IS
50
A
ISM
Fig.6
A
Integral pn-diode in MOSFET
Pulse Source Current (Body Diode)
Forward On-Voltage
(IS = 12 A, VGS = 0 V)
VSD
1.0
V
Forward Turn-On Time
(IF = 12 A, VGS = 0 V,
trr
25
38
ns
di/dt = 100A/μs)
Qrr
31
46
nC
Reverse Recovery Charge
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 2
CMT60N03G
N-CHANNEL Logic Level Power MOSFET
Note 1: TJ = +25℃ to 150℃
Note 2: Current is calculated based upon maximum allowable junction temperature.
Package current limitation is 30A.
Note 3: Repetitive rating; pulse width limited by maximum junction temperature.
Note 4: ISD = 12.0A, di/dt ≤100A/μs, VDD ≤ BVDSS, TJ = +150℃
Note 5: Pulse width ≤ 250μs; duty cycle ≤ 2%
Note 6: Essentially independent of operating temerpature.
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 3
CMT60N03G
N-CHANNEL Logic Level Power MOSFET
PACKAGE DIMENSION
TO-252
C
B
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
E
V
R
S
A
4
2
3
U
K
1
L
J
D
H
G
TO-263
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
C
B
2
3
K
1
S
A
V
E
G
2006/10/11 Rev1.2
J
D
H
Champion Microelectronic Corporation
Page 4
CMT60N03G
N-CHANNEL Logic Level Power MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F-1, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
7F-6, No.32, Sec. 1, Chenggong Rd.,
Nangang District, Taipei City 115, Taiwan
2006/10/11 Rev1.2
T E L : +886-2-2788 0558
F A X : +886-2-2788 2985
Champion Microelectronic Corporation
Page 5