A-POWER AP2603GY

AP2603GY
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
S
▼ Small Package Outline
D
D
▼ Surface Mount Device
G
BVDSS
-20V
RDS(ON)
65mΩ
ID
-5.0A
D
TSOP-6
D
Description
D
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
S
The TSOP-6 package is universally used for all commercial-industrial
applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
-20
V
±12
V
3
-5
A
3
-4
A
-20
A
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200129043
AP2603GY
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-20
-
-
V
-
-0.1
-
V/℃
VGS=-10V, ID=-4.5A
-
-
53
mΩ
VGS=-4.5V, ID=-4.2A
-
-
65
mΩ
VGS=-2.5V, ID=-2.0A
-
-
120
mΩ
VGS=-1.8V, ID=-1.0A
-
-
250
mΩ
VDS=VGS, ID=-250uA
-0.5
-
-1.2
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=-5V, ID=-2.8A
-
9
-
S
o
VDS=-20V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=55 C)
VDS=-16V, VGS=0V
-
-
-10
uA
Gate-Source Leakage
VGS= ±12V
-
-
±100
nA
ID=-4.2A
-
10.6
16
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
2.32
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3.68
-
nC
VDS=-15V
-
5.9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-4.2A
-
3.6
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
32.4
-
ns
tf
Fall Time
RD=3.6Ω
-
2.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
740
1200
pF
Coss
Output Capacitance
VDS=-15V
-
167
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
126
-
pF
Min.
Typ.
IS=-1.2A, VGS=0V
-
-
-1.2
V
IS=-4.2A, VGS=0V,
-
27.7
-
ns
dI/dt=100A/µs
-
22
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 156℃/W when mounted on min. copper pad.
Max. Units
AP2603GY
40
36
o
T A =25 C
-5.0V
-5.0V
TA=150oC
32
-4.0V
28
-ID , Drain Current (A)
-ID , Drain Current (A)
30
-4.0V
20
-3.0V
10
V G = -2.0V
24
65mΩ
20
-3.0V
16
12
8
V G = -2.0V
4
0
0
0
1
2
3
4
5
6
7
8
9
0
Fig 1. Typical Output Characteristics
2
3
4
5
6
7
Fig 2. Typical Output Characteristics
220
1.8
I =-4.2A
I DD=-4.2A
T A =25o o C
T A =25 C
I D = -4.2A
V GS = -4.5V
1.6
Normalized RDS(ON)
180
RDS(ON) (mΩ )
1
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
140
100
1.4
1.2
1
60
0.8
20
0.6
0
2
4
6
8
10
12
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
10
1
T j =150 o C
-VGS(th) (V)
-IS(A)
1
T j =25 o C
0.5
0.1
2.01E+08
0
0.01
0
0.4
0.8
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP2603GY
12
f=1.0MHz
1000
C iss
-VGS , Gate to Source Voltage (V)
I D = -4.2A
10
V DS = -16V
65mΩ
C (pF)
8
6
C oss
C rss
100
4
2
0
10
0
5
10
15
20
25
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
-ID (A)
1ms
1
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
DC
0.01
0.2
0.1
0.1
0.05
PDM
0.01
t
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 156℃
℃ /W
0.001
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q