isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2489 DESCRIPTION ·Good Linearity of hFE ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 150V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1065 APPLICATIONS ·Designed for AF amplifier,high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage MAX n c . i m e UNIT w w w s c s .i 150 V 150 V 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 120 W Tj Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2489 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 2.0 V VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 5V 2.5 V ICBO Collector Cutoff Current VCB= 70V; IE= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2 mA hFE-1 DC Current Gain IC= 2A ; VCE= 5V hFE-2 DC Current Gain fT CONDITIONS R Q 40-80 60-120 P 90-180 O 140-280 isc Website：www.iscsemi.cn IC= 0.5A ; VCE= 10V MAX 150 n c . i m e s c s i . w w w hFE-1 Classifications TYP. UNIT V B IC= 10A ; VCE= 5V Current-Gain—Bandwidth Product MIN 40 280 30 50 MHz