isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB979 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse -8 A Collector Power Dissipation @ TC=25℃ 60 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 3 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB979 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(on) MAX UNIT IC= -3A; IB= -0.3A -2.0 V Base -Emitter On Voltage IC= -3A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V 20 hFE-2 DC Current Gain IC= -1A; VCE= -5V 60 hFE-3 DC Current Gain IC= -3A; VCE= -5V 20 Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz fT CONDITIONS S P 60-120 80-160 100-200 isc Website：www.iscsemi.cn TYP. B hFE-2Classifications Q MIN 2 200 20 MHz