ISC 2SB713

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SB713
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min)
·Good Linearity of hFE
·High Power Dissipation
·Complement to Type 2SD751
APPLICATIONS
·Designed for high power audio frequency amplifier use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-9
A
ICP
Collector Current-Pulse
-15
A
PC
Collector Power Dissipation
@ TC=25℃
100
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SB713
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
MAX
UNIT
IC= -5.0A; IB= -0.7A
-2.0
V
Base -Emitter On Voltage
IC= -7A; VCE= -5V
-1.8
V
ICBO
Collector Cutoff Current
VCB= -140V; IE=0
-50
μA
IEBO
Emitter Cutoff Current
VEB= -3V; IC=0
-50
μA
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
20
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
40
hFE-3
DC Current Gain
IC= -5A; VCE= -5V
15
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
fT
‹
CONDITIONS
Q
P
40-80
60-120
100-200
isc Website:www.iscsemi.cn
TYP.
B
hFE-2 Classifications
R
MIN
2
200
20
MHz