KEXIN BCX41

Transistors
SMD Type
Medium Power Transistor
BCX41
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
SOT23 NPN silicon planar
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-emitter voltage
VCES
125
V
Collector-emitter voltage
VCEO
125
V
Emitter-base voltage
VEBO
5
V
Continuous collector current
ICM
1
A
Peak pulse current
IC
800
mA
Base current
IB
100
mA
Ptot
330
mW
Tj,Tstg
-55 to +150
Power dissipation
Operating and storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-emitter cut-off current
Emitter-base current
Max
Unit
ICES
VCE=100V
VCE=100V,Tamb = 150
Testconditons
100
10
nA
ìA
ICEX
VCE=100V,VBE=0.2V, Tamb = 85
VCE=100V,VBE=0.2V, Tamb = 125
10
75
ìA
ìA
IEBO
VEB=4V
100
nA
0.9
V
1.4
V
Collector-emitter saturation voltage *
VCE(sat) IC=300mA, IB=30mA
Base-emitter saturation voltage *
VBE(sat) IC=300mA, IB=30mA
DC current gain *
hFE
Transitional frequency
fT
Output capacitance
Cobo
* Pulse test: tp = 300 ìs; d
IC=100ìA,VCE=1V
IC=100mA,VCE=1V
IC=200mA,VCE=1V
Min
Typ
25
63
40
IC=10mA, VCE=5V, f=20MHz
100
MHz
VCB=10V, f=1MHz,IE=Ie=0
12
pF
0.02.
Marking
Marking
EK
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