NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H238 █ APPLICATIONS Switching and Aamplifier Applications. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………500mW VCES——Collector- Emitter Voltage………………………………30V 1―Collector，C 2―Base，B 3―Emitter，E VCEO ——Collector-Emitter Voltage……………………………25V VE B O ——Emitter -Base Voltage………………………………5V IC——Collector Current………………………………………100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO Collector-Emitter Breakdown Voltage ２５ Ｖ ＩＣ＝２ｍＡ，ＩＢ＝０ BVEBO Emitter-Base Breakdown Voltage ５ Ｖ ＩＥ＝１μＡ，ＩＣ＝０ ０．２ １５ １２０ ８００ ＶＣＥ＝５Ｖ， ＩＣ＝２ｍＡ ICES Collector Cut-off Current HFE DC Current Gain ｎＡ ＶＣＥ＝３０Ｖ，ＶＢＥ＝０ VCE(sat1) Collector- Emitter Saturatio n Voltage ０．０７ ０．２ Ｖ ＩＣ＝１０ｍＡ， ＩＢ＝０．５ｍＡ VCE(sat2) Collector- Emitter Saturation Voltage ０．２ ０．６ Ｖ ＩＣ＝１００ｍＡ， ＩＢ＝５ｍＡ VBE(sat1) Base-Emitter Saturation Voltage ０．７３ ０．８３ Ｖ ＩＣ＝１０ｍＡ， ＩＢ＝０．５ｍＡ VBE(sat2) Base-Emitter Saturation Voltage ０．８７ １．０５ Ｖ ＩＣ＝１００ｍＡ， ＩＢ＝５ｍＡ ０．５５ ０．６２ ０．７ Ｖ ＶＣＥ＝５Ｖ， ＩＣ＝２ｍＡ VBE(on) Base-Emitter On Voltage fT(1) Current Gain-Bandwidth Product ８５ ＭＨｚ ＶＣＥ＝３Ｖ，ＩＣ＝０．５ｍＡ，ｆ＝１００ＭＨｚ fT(2) Current Gain-Bandwidth Product １５０ ２５０ ＭＨｚ ＶＣＥ＝５Ｖ，ＩＣ＝１０ｍＡ，ｆ＝１００ＭＨｚ Cob Output Capacitance ３．５ ６ ｐＦ ＶＣＢ＝１０Ｖ，ＩＥ＝０，ｆ＝１ＭＨｚ NF Noise Figure ２ １０ ｄＢ ＶＣＥ＝５Ｖ，ＩＣ＝０．２ｍＡ， ｆ＝１ＫＨｚ，ＲＧ＝２ＫO █ hFE Classification Ａ 120—220 Ｂ 180—460 Ｃ 380—800 NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H238