NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HS945 █ APPLICATIONS The H945 is designed for driver stage of AF amplifier And low speed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………250mW 1―Emitter，E 2―Base，B 3― Collector，C VCBO ——Collector-Base Voltage………………………………60V VCEO ——Collector-Emitter Voltage……………………………50V VE B O ——Emitter -Base Voltage………………………………5V I C ——Collector Current …………………………………… 150mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ６０ Ｖ IC=100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage ５０ Ｖ IC=100μA, IB=0 BVEBO Emitter-Base Breakdown Voltage ５ Ｖ DC Current Gain ７０ ７００ IE=100μA，IC=0 VCE=6V, IC=1mA VCE(sat) Collector- Emitter Saturation Voltage ０．３ Ｖ IC=100mA, IB=10mA VBE(sat) Base-Emitter Saturation Voltage １．０ Ｖ IC=100mA, IB=10mA １００ ｎＡ VCB=60V, IE=0 HFE ICBO Collector Cut-off Current IEBO Emitter Cut-off Current fT Cob Current Gain-Bandwidth Product Output Capacitance １００ ｎＡ ３００ ＭＨｚ ２．５ ｐＦ NF Noise Figure ４．０ ｄＢ VEB=5V, IC=0 VCE=6V, IC=10mA VCB=6V, IE=0，f=1ＭＨｚ ＶＣＥ＝６Ｖ，ＩＣ＝０．５ｍＡ，ｆ＝１ＫＨｚ， Ｒｓ＝５００Ω █ hFE Classification Y O ７０—１４０ １２０—２４０ GR ２００—４００ BL ３５０—７００