NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H237 █ APPLICATIONS SWITCHING AND AMPLIFIER . █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 Tstg— — Storage Temperature………………………… -55~150℃ T j— — J u n c t i o n T e m p e r a t u r e… … … … … … … … … … 15 0 ℃ P C— — Collector Dissipation…………………………500mW 1? Collector，C 2? Base，B 3? Emitter，E VCBO— — Collector-Base Voltage…………………………50V VCEO— — Collector-Emitter Voltage…………………………45V VEBO — — Emitter - Base Voltage… … … … … … ………… 6 V I C— — C o l l e c t o r C u r r e n t … … … … … … … … … … 100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO BVEBO HFE Characteristics Min Typ Emitter-Base Breakdown Voltage ４５ ６ Ｖ Ｖ IC=2mA, IB=0 IE=1μA，IC=0 DC Current Gain １２０ ８００ VCE=5V, IC=2mA Collector-Emitter Breakdown Voltage Max Unit Test Conditions VCE(sat1) Collector- Emitter Saturation Voltage ０．０７ ０．２ Ｖ IC=10mA, IB=0.5mA VCE(sat2) Collector- Emitter Saturation Voltage ０．２ ０．６ Ｖ IC=100mA, IB=5mA VBE(sat1) Base-Emitter Saturation Voltage ０．７３ ０．８３ Ｖ IC=10mA, IB=0.5mA ０．８７ １．０５ ０．５５ ０．６２ ０．７ Ｖ Ｖ IC=100mA, IB=5mA VBE(sat2) Base-Emitter Saturation Voltage VBE(ON) ICES ft（1） ft（2） Base-Emitter On Voltage ０．２ １５ １５０ ８５ ２５０ Collector Cut-off Current Current Gain-Bandwidth Product Current Gain-Bandwidth Product VCE=5V, IC=2mA ｎＡ VCE=50V, VBE =0 ＭＨｚ VCE=3V, IC=0.5mA, f=100MHz ＭＨｚ VCE=5V, IC=10mA, f=100MHz Cob Output Capacitance ３．５ ６ ｐＦ VCB=10V, IE=0，f=1MHz Ｃｉｂ Input Capacitance ８ NF Noise Figure ２ １０ ｐＦ ＶＥＢ＝０．５Ｖ，ＩＣ＝０，ｆ＝１ＭＨｚ V =5V, IC=0.2mA， ｄＢ CE f=1KHz，RG=2KΩ █ hFE Classification A １２０—２２０ B １８０—４６０ GR ３８０—８００ Shantou Huashan Electronic Devices Co.,Ltd. H237