DIODES ZXTC2063E6

ZXTC2063E6
40V, SOT23-6, complementary medium power transistors
Summary
BVCEO > 40 (-40)V
BVECO > 6 (-3)V
IC(cont) = 3.5 (-3)A
VCE(sat) < 60 (-90)mV @ 1A
RCE(sat) = 38 (58)m⍀
PD = 1.1W
Description
C1
Advanced process capability has been used to achieve
this high performance device. Combining NPN and PNP
transistors in the SOT23-6 package provides a compact
solution for the intended applications.
B1
C2
B2
Features
E1
•
NPN - PNP combination
•
Very low saturation voltage
•
High gain
•
SOT23-6 package
Applications
•
MOSFET and IGBT gate driving
•
Motor drive
ZXTC2063E6TA
C1
E1
B1
B2
C2
E2
Top view
Ordering information
Device
E2
reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
8
3000
Device marking
2063
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ZXTC2063E6
Absolute maximum and thermal ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
130(-45)
V
Collector-emitter voltage
VCEO
40(-40)
V
Emitter-collector voltage (reverse blocking)
VECO
6(-3)
V
Emitter-base voltage
VEBO
7(-7)
V
IC
3.5(-3)
A
ICM
9(-9)
A
IB
1(-1)
A
0.7
W
5.6
mW/°C
0.9
W
7.2
mW/°C
1.1
W
8.8
mW/°C
1.1
W
8.8
mW/°C
1.7
W
PD
13.6
mW/°C
Operating and storage temperature range
Tj, Tstg
-55 to +150
°C
Thermal resistance junction to ambient(a)(f)
R⍜JC
179
°C/W
Thermal resistance junction to ambient(b)(f)
R⍜JA
139
°C/W
Thermal resistance junction to ambient(b)(g)
R⍜JC
113
°C/W
Thermal resistance junction to ambient(c)(f)
R⍜JC
113
°C/W
Thermal resistance junction to ambient(d)(f)
R⍜JA
73
°C/W
Continuous collector current(c)(f)
Peak pulse current
Base current
Power dissipation @ Tamb = 25°C(a)(f)
Linear derating factor
PD
Power dissipation @ Tamb = 25°C(b)(f)
Linear derating factor
PD
Power dissipation @ Tamb = 25°C(b)(g)
Linear derating factor
PD
Power dissipation @ Tamb = 25°C(c)(f)
Linear derating factor
PD
Power dissipation @ Tamb = 25°C(d)(f)
Linear derating factor
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(d) As above measured at t<5 seconds.
(e) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance
graph.
(f) For device with one active die, both collectors attached to a common sink.
(g) For device with two active dice running at equal power, split sink 50% to each collector.
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ZXTC2063E6
Thermal characteristics
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ZXTC2063E6
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Collector-base
breakdown voltage
BVCBO
Collector-emitter
breakdown voltage
(base open)
BVCEO
(-)40
Emitter-base
breakdown voltage
BVEBO
Emitter-collector
breakdown voltage
(reverse blocking)
Typ.
Max.
130(-45) 170(-80)
Unit Conditions
V
IC = (-)100␮A
63(-65)
V
IC = (-)10mA (*) *
(-)7
(-)8.3
V
IE = (-)100␮A
BVECX
(-)6
(-)7.4
V
IE = (-)100␮A, RBC < 1k⍀ or
0.25V > VBC > -0.25V
(0.25V < VBC < -0.25V)
Emitter-collector
breakdown voltage
(base open)
BVECO
6(-3)
7.4(-8.7)
V
IE = (-)100␮A
Collector-base cut-off
current
ICBO
Emitter-base cut-off
current
IEBO
Collector-emitter
saturation voltage
VCE(sat)
<1
(-)50
nA
VCB =100(-36)V
(-)20
␮A
VCB =100(-36)V, Tamb= 100°C
<1
(-)50
nA
VEB = (-)5.6V
50(-70)
60(-90)
85(-195) 110(-290)
mV IC = (-)1A, IB = (-)100mA *
mV IC = (-)1A, IB = (-)20mA *
150
220
(-175)
(-260)
mV (IC = -3A, IB = -300mA *)
135
195
mV IC = 3.5A, IB = 350mA *
Base-emitter saturation VBE(sat)
voltage
(-935)
(-1000)
mV (IC = -3A, IB = -300mA *)
960
1050
mV IC = 3.5A, IB = 350mA *
Base-emitter turn-on
voltage
VBE(on)
(-855)
860
(-950)
950
mV (IC = -3A, VCE = -2V *)
mV IC = 3.5A, VCE = 2V *
Static forward current
transfer ratio
hFE
( )450
( )900
( )300
mV IC = 2A, IB = 40mA *
IC = (-)10mA, VCE = (-)2V *
IC = (-)1A, VCE = (-)2V *
280(200) 400(280)
(20)
(50)
(IC = -3A, VCE = -2V *)
40
60
IC = 3.5A, VCE = 2V *
MHz IC = (-)50mA, VCE = (-)10V
f = 100MHz
Transition frequency
fT
190
(270)
Output capacitance
COBO
12(17)
Delay time
td
Rise time
20(25)
pF
VCB = (-)10V, f = 1MHz *
64(57)
ns
tr
108(69)
ns
VCC = (-)10V. IC = (-)1A, IB1
= IB2= (-)10mA.
Storage time
ts
428(154)
ns
Fall time
tf
130(60)
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%
( ) = PNP
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ZXTC2063E6
NPN Characteristics
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ZXTC2063E6
PNP Characteristics
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ZXTC2063E6
Package outline - SOT23-6
DIM
A
A1
A2
b
C
D
E
E1
L
e
e1
L
Millimeters
Min.
0.90
0.00
0.90
0.35
0.09
2.70
2.20
1.30
0.10
Inches
Max.
1.45
0.15
1.30
0.50
0.26
3.10
3.20
1.80
0.60
Min.
0.354
0.00
0.0354
0.0078
0.0035
0.1062
0.0866
0.0511
0.0039
0.95 REF
1.90 REF
0°
Max.
0.0570
0.0059
0.0511
0.0196
0.0102
0.1220
0.1181
0.0708
0.0236
0.0374 REF
0.0748 REF
30°
0°
30°
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTC2063E6
Definitions
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“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
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Device will be discontinued and last time buy period and delivery is in effect
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Production has been discontinued
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This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
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This term denotes an issued datasheet containing finalized specifications. However, changes to
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© 2007 Published by Zetex Semiconductors plc
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