DIODES VN10LP

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
VN10LP
ISSUE 2 – NOVEMBER 2005
FEATURES
* 60 Volt VDS
* RDS(on)=5Ω
D
G
REFER TO ZVN3306A FOR GRAPHS
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DS
VALUE
60
UNIT
V
Continuous Drain Current at T amb = 25°C
ID
270
mA
Pulsed Drain Current
I DM
3
A
Gate Source Voltage
V GS
± 20
V
Power Dissipation at T amb = 25°C
P tot
625
mW
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Drain-Source
Breakdown Voltage
BV DSS
60
Gate-Source Threshold
Voltage
V GS(th)
0.8
Gate Body Leakage
I GSS
Zero Gate Voltage
Drain Current (1)
I DSS
On State Drain
Current(1)
I D(on)
Static Drain Source On
State Resistance (1)
R DS(on)
Forward
Transconductance
(1)(2)
g fs
TYP.
MAX.
UNIT
CONDITIONS.
V
I D=100µA, V GS=0V
V
ID=1mA, V DS= V GS
100
nA
V GS=± 20V, V DS=0V
10
µA
V DS=60 V, V GS=0V
mA
V DS=15 V, V GS=10V
Ω
Ω
V GS=10V,I D=500mA
V GS=5V, I D=200mA
mS
V DS=15V,I D=500mA
2.5
750
5.0
7.5
100
Input Capacitance (2)
C iss
60
pF
Common Source
Output Capacitance (2)
C oss
25
pF
Reverse Transfer
Capacitance (2)
C rss
5
pF
Turn-On Time (2)(3)
t (on)
10
ns
Turn-Off Time (2)(3)
t (off)
10
ns
3-90
V DS=25 V, V GS=0V
f=1MHz
V DD ≈15V, I D=600mA