SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – DECEMBER 1995 FEATURES * 200 Volt VDS * RDS(on)= 25Ω ZVN3320F ✪ S D G PARTMARKING DETAIL – MU SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at T amb =25°C ID 60 mA Pulsed Drain Current I DM 1 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb =25°C P tot 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 200 Gate-Source Threshold Voltage V GS(th) 1.0 MAX. UNIT CONDITIONS. 3.0 V I D =1mA, V GS =0V V I D =1mA, V DS = V GS Gate-Body Leakage I GSS 100 nA V GS =± 20V, V DS =0V Zero Gate Voltage Drain Current I DSS 10 50 µA µA V DS =200V, V GS =0V V DS =160V, V GS =0V, T=125°C (2) mA V DS =25V, V GS =10V 25 Ω V GS =10V,I D =100mA mS V DS =25V,I D =100mA On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance(1) (2) g fs 250 75 Input Capacitance (2) C iss 45 pF Common Source Output Capacitance (2) C oss 18 pF Reverse Transfer Capacitance (2) C rss 5 pF Turn-On Delay Time (2)(3) t d(on) 5 ns Rise Time (2)(3) tr 7 ns Turn-Off Delay Time (2)(3) t d(off) 6 ns Fall Time (2)(3) tf 6 ns V DS =25V, V GS =0V, f=1MHz V DD ≈25V, I D =100mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 398