P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0545A ISSUE 2 MARCH 94 FEATURES * 450 Volt VDS * RDS(on)=150Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -450 V Continuous Drain Current at Tamb=25°C ID -45 mA Pulsed Drain Current IDM -400 mA Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -450 Gate-Source Threshold Voltage VGS(th) -1.5 MAX. UNIT CONDITIONS. V ID=-1mA, VGS=0V -4.5 V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -20 -2 µA mA VDS=-450 V, VGS=0 VDS=-360 V, VGS=0V, T=125°C(2) mA VDS=-25 V, VGS=-10V Ω VGS=-10V,ID=-50mA mS VDS=-25V,ID=-50mA On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) Forward Transconductance (1)(2) gfs -100 150 40 Input Capacitance (2) Ciss 120 pF Common Source Output Capacitance (2) Coss 20 pF Reverse Transfer Capacitance (2) Crss 5 pF Turn-On Delay Time (2)(3) td(on) 10 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) td(off) 15 ns Fall Time (2)(3) tf 20 ns VDS=-25 V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-50mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-413 ( 3