DMP2004DWK DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Dual P-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage VGS(TH) <1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected "Green" Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) • • • • • • SOT-363 TOP VIEW ESD PROTECTED Maximum Ratings G1 S1 S2 G2 D1 TOP VIEW Internal Schematic @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = 25°C TA = 85°C Drain Current (Note 1) Thermal Characteristics Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Units V V ID Value -20 ±8 -430 -310 Symbol PD RθJA TJ, TSTG Value 250 500 -65 to +150 Units mW °C/W °C mA @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: D2 @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 ±1.0 V μA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) -0.5 ⎯ -1.0 V RDS (ON) ⎯ 0.7 1.1 1.7 0.9 1.4 2.0 Ω |Yfs| VSD 200 -0.5 ⎯ ⎯ ⎯ -1.2 ms V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS = 10V, ID = 0.2A VGS = 0V, IS = 115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 175 30 20 pF pF pF IDSS Test Condition VDS = -16V, VGS = 0V f = 1.0MHz 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. DMP2004DWK Document number: DS30940 Rev. 4 - 2 1 of 5 www.diodes.com May 2010 © Diodes Incorporated -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) DMP2004DWK 0 0 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics -VGS(th), GATE THRESHOLD VOLTAGE (V) -VDS, DRAIN SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics -ID, DRAIN-SOURCE CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current TA, AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMP2004DWK Document number: DS30940 Rev. 4 - 2 2 of 5 www.diodes.com -ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage May 2010 © Diodes Incorporated DMP2004DWK TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature -ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance Ordering Information (Note 5) Part Number DMP2004DWK-7 Notes: Case SOT-363 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code Month Code 2007 U Jan 1 2008 V Feb 2 DMP2004DWK Document number: DS30940 Rev. 4 - 2 2009 W Mar 3 PAB = Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) YM PAB 2010 X Apr 4 2011 Y May 5 Jun 6 3 of 5 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 2014 B Sep 9 2015 C Oct O 2016 D Nov N Dec D May 2010 © Diodes Incorporated DMP2004DWK Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D L F Suggested Pad Layout C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X DMP2004DWK Document number: DS30940 Rev. 4 - 2 4 of 5 www.diodes.com May 2010 © Diodes Incorporated DMP2004DWK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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