PT8205A 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38mΩ RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications D1 S1 S1 G1 TSSOP-8 REF. A . A1 A2 Millimeter Min. Max. 1.20 MAX. 0.05 0.15 0.80 1.05 C 0.19 0.90 0.30 0.20 D 2.90 3.00 b E 1 8 2 7 3 6 4 5 Millimeter REF. E1 Min. Max. 4.30 4.50 0.65BSC e L 0.45 0.75 θ 0° 10° 6.40BSC Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 ID 6 IDM 20 Continuous Drain Current Pulsed Drain Current 1) TA = 25oC Maximum Power Dissipation o TA = 75 C PD TJ, Tstg Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) 2) RθJA Unit V A 1.6 W 1 o -55 to 150 78 C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. １ JinYu semiconductor S2 S2 G2 Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter D2 www.htsemi.com Ｄａｔｅ：２０１１／０５ PT8205A 20V Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min. Typ. 20 - Max. Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA Drain-Source On-State Resistance RDS(on) VGS = 2.5V, ID = 5.2A 30.0 38 Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 6A 21.0 28 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA 0.6 - V mΩ 1.5 V Zero Gate Voltage Drain Current 0 IDSS VDS = 20V, VGS = 0V 1 uA Gate Body Leakage IGSS VGS = ± 8V, V DS = 0V ±100 nA gfs VDS = 5V, ID =6A Forward Transconductance 22 S Dynamic 1) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10V, ID = 6A VGS = 4.5V 5 nC 1.1 2.1 10 20 VDD = 10V, RG = 6Ω 11 25 ID = 1A, VGS= 4.5V 35 70 30 VDS = 8V, VGS = 0V f = 1.0 MHz ns 60 600 pF 330 140 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage 1) IS VSD IS = 1.7A, VGS = 0V 0.72 1.7 A 1.2 V Pulse test: pulse width <= 300us, duty cycle<= 2% ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ PT8205A 20V Dual N-Channel Enhancement Mode MOSFET ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５