1.5V Drive Pch+Pch MOSFET TT8J21 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET TSST8 zFeatures 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (1.5 V) (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : J21 zApplications Switching Each lead has same dimensions zPackaging specifications zInner circuit Package Type (8) Taping (7) (6) (5) TR Code Basic ordering unit (pieces) 3000 TT8J21 ∗2 ∗2 ∗1 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2.> Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) ∗2 PD Total power dissipation Tch Tstg Channel temperature Range of Storage temperature Limits −20 ±10 ±2.5 ±10 −0.8 −10 1.25 1.0 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Symbol ∗ Channel to ambient Rth(ch-a) Limits Unit 100 125 °C / W / TOTAL °C / W / ELEMENT ∗ Mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.01 - Rev.A Data Sheet TT8J21 zElectrical characteristics (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.3 − Static drain-source on-state − ∗ RDS (on) resistance − − Forward transfer admittance Yfs ∗ 2.5 Input capacitance − Ciss Output capacitance Coss − Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ Typ. Max. − − − − 49 68 100 140 − 1270 100 90 9 30 120 85 12 2.5 2.0 ±10 − −1 −1.0 68 95 150 280 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −2.5A, VGS= −4.5V ID= −1.2A, VGS= −2.5V ID= −1.2A, VGS= −1.8V ID= −0.5A, VGS= −1.5V VDS= −10V, ID= −2.5A VDS= −10V VGS=0V f=1MHz VDD −10V VGS= −4.5V ID= −1.2A RL 8.3Ω RG=10Ω VDD −10V VGS= −4.5V ID= −2.5A RL 4Ω / RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. Unit VSD ∗ − − −1.2 V Conditions IS= −2.5A, VGS=0V ∗ Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/5 2009.01 - Rev.A Data Sheet TT8J21 zElectrical characteristic curves 3 DRAIN CURRENT : -ID[A] 2 VGS= -1.3V 1 VGS= -1.5V VGS= -1.3V 2 VGS= -1.2V 1 0 0 0.2 0.4 0.6 0.8 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 1 0.001 0 2 4 6 8 10 0 0.5 1 1.5 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V] Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 10 1 1000 VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 10 0.1 10 DRAIN-CURRENT : -ID[A] 1 10 100 10 1 10 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 100 10 0.1 Fig.5 Static Drain-Source On-State Resistance vs. Drain STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VGS= -1.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 10 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 3/5 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 1 10 DRAIN-CURRENT : -ID[A] 1000 1000 0.1 VGS= -2.5V Pulsed DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain VGS= -1.8V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 Ta=25°C Pulsed 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VDS= -10V Pulsed VGS= -1.1V VGS= -1.1V 1000 10 Ta=25°C Pulsed VGS= -1.4V 3 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= -10V VGS= 1.8V Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] DRAIN CURRENT : -ID[A] VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V 4 DRAIN CURRENT : -ID[A] Ta=25°C Pulsed 4 100 VDS= -10V Pulsed 10 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 1 0 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 2009.01 - Rev.A Data Sheet Ta=25°C Pulsed 250 ID= -2.5A 200 150 100 50 ID= -1.2A 0 0 2 4 6 8 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 10 0 GATE-SOURCE VOLTAGE : -VGS[V] 0.2 0.4 0.6 0.8 10000 SWITCHING TIME : t [ns] 1000 Coss Crss 100 Ta=25°C f=1MHz VGS=0V 0.1 3 2 Ta=25°C VDD= -10V ID= -2.5A RG=10Ω Pulsed 1 0 0 2 4 6 8 10 12 14 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics Ta=25°C VDD= -10V VGS=-4.5V RG=10Ω Pulsed td(off) 1000 4 tf 100 10 td(on) tr 1 10 0.01 1.2 Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage 10000 Ciss 1 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage CAPACITANCE : C [pF] 5 VGS=0V Pulsed GATE-SOURCE VOLTAGE : -VGS [V] 300 REVERSE DRAIN CURRENT : -Is [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] TT8J21 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.14 Switching Characteristics 4/5 2009.01 - Rev.A Data Sheet TT8J21 zMeasurement circuits Pulse width ID VGS VDS VGS 10% 50% RL D.U.T. RG 90% 50% 10% VDD VDS 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit 10% tf toff Fig.1-2 Switching Waveforms VG ID Qg VDS VGS RL VGS D.U.T. IG(Const.) RG Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 5/5 2009.01 - Rev.A Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. 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