SEMICONDUCTOR KMB6D0NP40QA TECHNICAL DATA N and P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter. H T G P D L FEATURES N-Channel A : VDSS=40V, ID=6A. : RDS(ON)=31m (Max.) @ VGS=10V : RDS(ON)=45m (Max.) @ VGS=4.5V 8 5 P-Channel B1 B2 : VDSS=-40V, ID=-5A. 1 : RDS(ON)=45m (Max.) @ VGS=-10V 4 : RDS(ON)=63m (Max.) @ VGS=-4.5V DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 Super High Dense Cell Design. MAXIMUM RATING (Ta=25 FLP-8 ) CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT Drain-Source Voltage VDSS 40 -40 V Gate-Source Voltage VGSS 20 DC I D* 6 -5 Pulsed IDP* 20 -20 IS* 3.0 -3.2 2 2 1.3 1.3 Drain Current Source-Drain Diode Current Drain Power Dissipation 20 TA=25 PD* TA=70 V A Marking Type Name A W KMB6D0NP 40QA Lot No. Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Tj 150 Tstg -55 150 RthJA* 62.5 /W * : Surface Mounted on FR4 Board. PIN CONNECTION (TOP VIEW) S1 1 8 D1 1 8 G1 2 7 D1 2 7 3 6 4 5 S2 3 6 D2 G2 4 5 D2 2008. 8. 12 Revision No : 0 1/8 KMB6D0NP40QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS Drain Cut-off Current IDSS Gate Leakage Current IGSS Vth Gate Threshold Voltage RDS(ON)* Drain-Source ON Resistance gfs* Forward Transconductance ID=250 A, VGS=0V N-Ch 40 - - ID=-250 A, VGS=0V P-Ch -40 - - VDS=32V, VGS=0V N-Ch - - 1 VDS=-32V, VGS=0V P-Ch - - -1 N-Ch - - 100 P-Ch - - 100 VDS=VGS, ID=250 A N-Ch 1.0 2.3 3.0 VDS=VGS, ID=-250 A P-Ch -1.0 -2.0 -3.0 VGS=10V, ID=6A N-Ch - 19.6 31.0 VGS=-10V, ID=-5A P-Ch - 31.2 45.0 VGS=4.5V, ID=5A N-Ch - 39.9 45.0 VGS=-4.5V, ID=-2A P-Ch - 47.6 63.0 VDS=5V, ID=6A N-Ch - 2.2 - VDS=-5V, ID=-4A P-Ch - 9.5 - N-Ch - 420 - P-Ch - 850 - N-Ch - 160 - P-Ch - 220 - N-Ch - 40 - P-Ch - 82 - N-Ch - 12.0 - P-Ch - 15.0 - N-Ch - 1.6 - P-Ch - 2.0 - N-Ch - 2.6 - P-Ch - 6.5 - N-Ch - 9.0 - VGS= 20V, VDS=0V V A nA V m S Dynamic Ciss Input Capacitance Output Capacitance Coss Reverse transfer Capacitance Crss Qg* Total Gate Charge Qgs* Gate-Source Charge Qgd* Gate-Drain Charge N-Ch : VDS=20V, VGS=0V, f=1MHz P-Ch : VDS=-20V, VGS=0V, f=1MHz N-Ch : VDS=20V, ID=6A, VGS=10V P-Ch : VDS=-20V, ID=-5A, VGS=-10V N-Ch : VDS=20V, ID=6A, VGS=10V P-Ch : VDS=-20V, ID=-5A, VGS=-4.5V td(on)* Turn-on Delay time tr* Turn-on Rise time td(off)* Turn-off Delay time N-Ch : VDD=20V, ID=6A, VGS=10V, RG=3 P-Ch : VDD=-20V, VGS=-10V, RG=3 , ID=-5A - 17.0 - - 8.9 - P-Ch - 13.2 - N-Ch - 23.6 - P-Ch - 38.0 - N-Ch - 3.4 - P-Ch - 15.0 - IS=1.0A, VGS=0V N-Ch - 0.71 1.2 IS=-1.0A, VGS=0V P-Ch - -0.71 -1.2 tf* Turn-off Fall time P-Ch N-Ch pF nC ns Source-Drain Diode Ratings Source-Drain Diode Forward Voltage Note>* Pulse Test : Pulse width <300 2008. 8. 12 VSDF* V , Duty cycle < 2% Revision No : 0 2/8 KMB6D0NP40QA 2008. 8. 12 Revision No : 0 3/8 KMB6D0NP40QA 2008. 8. 12 Revision No : 0 4/8 KMB6D0NP40QA Fig11. Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 2.0 mA Q VDS Qgd Qgs Qg VGS Fig12. Resistive Load Switching RL VDS 90% 0.5 VDSS 3Ω VDS 10 V VGS VGS 10% td(on) tr ton 2008. 8. 12 Revision No : 0 td(off) tf toff 5/8 KMB6D0NP40QA 2008. 8. 12 Revision No : 0 6/8 KMB6D0NP40QA 2008. 8. 12 Revision No : 0 7/8 KMB6D0NP40QA Fig. 11 Gate Charge VGS -4.5 V Schottky Diode ID 0.5 VDSS ID 2.0 mA Q VDS Qgd Qgs Qg VGS Fig. 12 Resistive Load Switching RL td(on) VGS 0.5 VDSS ton tr td(off) toff tf 10% 3Ω VDS -10 V VGS VDS 2008. 8. 12 Revision No : 0 90% 8/8