KEC KMA2D3P20S

SEMICONDUCTOR
KMA2D3P20S
TECHNICAL DATA
P-Ch Trench MOSFET
General Description
It s mainly suitable for use as a load switch in battery powered applications.
E
B
FEATURES
VDSS=-20V, ID=-2.3A.
A
H
G
3
: RDS(ON)=130m (Max.) @ VGS=-4.5V.
D
2
Drain-Source ON Resistance.
1
J
K
MAXIMUM RATING (Ta=25
MILLIMETERS
_ 0.1
2.93 +
_ 0.1
1.63 +
1.25 MAX
0.40+0.1/-0.05
_ 0.15
2.80 +
_ 0.1
1.9 +
_ 0.1
0.95 +
0.15+0.1/-0.05
0.00 ~ 0.15
_ 0.08
0.45 +
_ 0.1
1.10 +
N
C
: RDS(ON)=190m (Max.) @ VGS=-2.5V.
DIM
A
B
C
D
E
G
H
J
K
M
N
M
)
CHARACTERISTIC
SYMBOL RATING
UNIT
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
10
DC
ID *
-2.3
Pulsed (Note1)
IDP*
-8
IS *
-1.25
A
PD *
1.25
W
Tj
150
Tstg
-55 150
RthJA *
100
-20
Drain Current
V
SOT-23W
V
A
Source-Drain Diode Current
Drain Power Dissipation
Ta=25
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
* : Surface Mounted on 1
1 FR4 Board
/W
SH1
PIN CONNECTION (TOP VIEW)
D
3
3
2007. 5. 30
2
1
G
S
Revision No : 2
2
1
1/5
KMA2D3P20S
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
BVDSS
ID=-250 A, VGS=0V,
-20
-
-
V
Drain Cut-off Current
IDSS
VGS=0V, VDS=-16V
-
-
-1
A
Gate Leakage Current
IGSS
VGS=
-
-
100
Gate Threshold Voltage
Vth
VDS=VGS, ID=-250 A
(Note 1)
-0.5
-0.8
-1.5
VGS=-4.5V, ID=-2.3A
(Note 1)
-
115
130
VGS=-2.5V, ID=-1.0A
(Note 1)
-
175
190
VGS=-4.5V, VDS=-5V
(Note 1)
-5
-
-
A
gfs
VDS=-5V, ID=-2.3A
(Note 1)
-
6
-
S
VSD
VGS=0V, IS=-1.25A
(Note 1)
-
-0.85
-1.2
V
-
3.2
-
-
0.7
-
Drain-Source Breakdown Voltage
10V, VDS=0V
RDS(ON)
Drain-Source ON Resistance
ID(ON)
ON State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
nA
V
m
Dynamic (Note 2)
Qg
Total Gate Charge
VDS=-10V, ID=-2.3A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
0.8
-
Turn-on Delay time
td(on)
-
9.8
-
-
10.8
-
-
79.1
-
-
41.3
-
-
290
-
-
60
-
-
45
-
VGS=-4.5V
tr
VDS=-10V, ID=-1A
td(off)
VGS=-4.5V, RG=6
Turn-on Rise time
(Fig.1)
nC
ns
Turn-off Delay time
Turn-off Fall time
tf
Input Capacitance
Ciss
Coss
Output Capacitance
VDS=-20V, VGS=0V
Note 1) Pulse test : Pulse width 300
, Duty Cycle
pF
f = 1.0MHz
Crss
Reverse Trancefer Capacitance
(Fig.2)
2%.
Note 2) Guaranteed by design. Not subject to production testing.
2007. 5. 30
Revision No : 2
2/5
KMA2D3P20S
Fig1. ID - VDS
Fig2. ID - VGS
-15
-20
VD = VG
-10V
-16
Drain Current ID (A)
Drain Current ID (A)
-4.5V
-4V
-6V
-12
-3V
-8
VGS = -2V
-4
Tj=25 C
Tj= -55 C
-9
Tj=125 C
-6
-3
0
0
-0.5
0
-1
-1.5
-2
-2.5
-3.2
-4.0
Fig4. IS - VSD
1.1
1.0
0.9
0.8
0.7
-25
0
25
50
75
100
-4.8
-20
-10
Tj=25 C
-1
-0.4
125
-0.8
-1.2
-1.6
-2.0
-2.4
Source - Drain Voltage VSD (V)
Junction Temperature Tj ( C)
Fig5. RDS(ON) - Tj
Fig6. C - VDS
2.2
500
VGS = -4.5V
IDS =-2.3A
Frequency = 1MHz
400
Capacitance (pF)
Normalized On Resistance
-2.4
Fig3. Vth - Tj
1.2
1.8
-1.6
Gate - Source Voltage VGS (V)
ID= -250µA
VDS = VGS
-50
-0.8
Drain - Source Voltage VDS (V)
1.3
0.6
-75
0
-3
Reverse Drain Current IS (A)
Normalized Threshold Voltage Vth
-12
1.4
1.0
0.6
Ciss
300
200
Coss
100
0.2
Crss
0
0
-75
-50
-25
0
25
50
75
Junction Temperture Tj ( C )
2007. 5. 30
Revision No : 2
100
125
0
-5
-10
-15
-20
-25
-30
Drain - Source Voltage VDS (V)
3/5
KMA2D3P20S
Fig7. Qg - VGS
Gate - Source Voltage VGS (V)
-5
VDS = -4.5V
ID = -2.3A
-4
-3
-2
-1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Gate - Charge Qg (nC)
Fig8. Safe Operation Area
operation in this area
is limited by RDS(ON)
Drain Current ID (A)
-101
100us
1ms
100ms
-100
10ms
1s
-10-1
DC
VGS= -4.5V
SINGLE PULSE
Ta= 25 C
-10-2
-10-1
-100
-101
-102
Drain - Source Voltage VDS (V)
Fig9. Transient Thermal Response Curve
Normalized Transient Thermal Resistance
101
100
0.5
0.2
10-1
0.1
0.05
PDM
t1
0.02
t2
0.01
Single Pluse
10-2
10-5
10-4
- Duty Factor, D= t1/t2
10-3
10-2
10-1
100
101
102
103
Square Wave Pulse Duration (sec)
2007. 5. 30
Revision No : 2
4/5
KMA2D3P20S
Fig10. Gate Charge
VGS
-4.5 V
Schottky
Diode
ID
0.5
VDSS
ID
1.0 mA
Q
VDS
Qgd
Qgs
Qg
VGS
Fig11. Resistive Load Switching
td(on)
RL
ton
tr
td(off)
toff
tf
VGS
0.5 VDSS
10%
6Ω
VDS
-4.5 V
VGS
VDS
2007. 5. 30
Revision No : 2
90%
5/5