SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications 1.6±0.05 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±20 V DC ID 100 Pulse IDP 400 Drain current Power dissipation PD (Note 1) 2 5 3 4 mA 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C ES6 JEDEC 0.2±0.05 6 0.12±0.05 Characteristics 1 0.55±0.05 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 1.0±0.05 0.5 0.5 1.2±0.05 1.6±0.05 • • • Unit: mm 1.Source1 4.Source2 2.Gate1 5.Gate2 3.Drain2 6.Drain1 ― Note: Using continuously under heavy loads (e.g. the application of JEITA ― high temperature/current/voltage and the significant change in TOSHIBA 2-2N1D temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 3.0 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) 0.45 mm 0.3 mm Marking 6 Equivalent Circuit (top view) 5 4 6 DI 1 2 5 Q1 3 1 4 Q2 2 3 1 2010-11-22 SSM6N15AFE Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Drain-Source breakdown voltage Test Condition V (BR) DSS ID = 0.1 mA, VGS = 0 V V (BR) DSX ID = 0.1 mA, VGS = -10 V (Note 3) Min Typ. Max Unit 30 ⎯ ⎯ 16 ⎯ ⎯ ⎯ ⎯ 1 μA V Drain cut-off current IDSS VDS = 30 V, VGS = 0 V Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±1 μA Vth VDS = 3 V, ID = 0.1 mA 0.8 ⎯ 1.5 V Forward transfer admittance ⎪Yfs⎪ VDS = 3 V, ID = 10 mA (Note 2) 35 ⎯ ⎯ mS Drain-Source ON resistance RDS (ON) ID = 10 mA, VGS = 4 V (Note 2) ⎯ 2.3 3.6 ID = 10 mA, VGS = 2.5 V (Note 2) ⎯ 3.5 6.0 ⎯ 13.5 ⎯ ⎯ 8.0 ⎯ ⎯ 6.5 ⎯ Gate threshold voltage Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Switching time VDS = 3 V, VGS = 0 V, f = 1 MHz Turn-on time ton VDD = 5 V, ID = 10 mA, ⎯ 5.5 ⎯ Turn-off time toff VGS = 0 to 5 V, RG = 50 Ω ⎯ 35 ⎯ ⎯ -0.85 -1.2 Drain-source forward voltage VDSF ID = -100 mA, VGS = 0 V (Note 2) Ω pF ns V Note 2: Pulse test Note 3: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (b) VIN (a) Test circuit 5V OUT 5V 90% RG 0 10 μs RL IN 0V (c) VOUT VDD VDD = 5 V RG = 50 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 10% VDD VDS (ON) 90% 10% tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 0.1 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. Do not use this device under avalanche mode. It may cause the device to break down. Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration 2 2010-11-22 SSM6N15AFE ID – VDS ID – VGS 1000 Common source Ta = 25 °C Pulse test 10 V 300 ID 3.0 V 100 2.7 V 200 10 Ta = 100 °C Drain current Drain current (mA) 4.0 V ID (mA) 400 2.5 V 2.3 V 100 1 − 25 °C 25 °C 0.1 Common source VDS = 3 V Pulse test VGS = 2.1 V 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS 0.01 0 1.0 (V) 1.0 12 2.1 V 2.3 V 2.5 V Drain-source ON-resistance RDS (ON) (Ω) 3.0 V 4 4.0 V 3 2 VGS = 10 V 1 Common source Ta = 25°C Pulse test 0 100 200 Drain current 300 ID 10 8 6 25 °C 4 Ta = 100 °C 2 − 25 °C 0 400 0 4 2 RDS (ON) – Ta Gate threshold voltage 3 10 mA / 4.0 V Common source Pulse test 0 50 Ambient temperature VGS 10 (V) Common source VDS = 3 V ID = 0.1 mA Vth (V) ID = 10 mA / VGS = 2.5 V 4 1 8 Vth – Ta 2.0 5 0 −50 6 Gate-source voltage (mA) 6 2 (V) ID = 10 mA Common source Pulse test 2.7 V 5 Drain-source ON-resistance RDS (ON) (Ω) VGS 4.0 RDS (ON) – VGS RDS (ON) – ID Drain-source ON-resistance RDS (ON) (Ω) 3.0 Gate-source voltage 6 0 2.0 100 Ta 1.0 0 −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2010-11-22 1000 IDR (mA) Common source VDS = 3 V Ta=25°C Pulse test 100 Drain reverse current Forward transfer admittance IDR – VDS |Yfs| – ID 1000 ⎪Yfs⎪ (mS) SSM6N15AFE 10 1 100 10 1 Drain current ID 25 °C 10 Common source VGS = 0 V Pulse test D Ta =100 °C 1 S –0.5 –1.0 Drain-source voltage (mA) VDS –1.5 (V) t – ID 1000 Common source VDD = 5 V VGS = 0 to 5 V Ta = 25 °C RG = 50Ω (pF) (ns) toff 100 t tf 10 Switching time C Capacitance IDR G −25 °C 0.1 0 1000 C – VDS 100 100 Ciss Coss Common source Ta = 25°C f = 1 MHz VGS = 0 V 10 ton Crss tr 1 1 0.1 1 10 Drain-source voltage 100 VDS 1 (V) 10 Drain current 100 ID 1000 (mA) PD* – Ta 250 Power dissipation PD* (mW) Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm × 6) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) *:Total Rating 4 2010-11-22 SSM6N15AFE RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2010-11-22