ransistors SMD Type Product specification FMMT625 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ■ Features 0.4 3 1 0.55 ● Power dissipation :PC=625mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector current:IC=1A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Base current IB 0.5 A Power dissipation PC 625 mW Tj,Tstg -55 to +150 ℃ Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 ransistors SMD Type Product specification FMMT625 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA 150 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 150 V Emitter-base breakdown voltage V(BR)EBO IE=100μA 5 V Collector cutoff current ICBO VCB=130V 100 nA Emitter cut-off current IEBO VEB=4V 100 nA Collector emitter cutoff current ICES VCES=130V 100 nA IC=0.1A,IB=10mA Collector-emitter saturation voltage * 26 50 mV VCE(sat) IC=0.1A,IB=1mA 110 200 mV IC=1A,IB=50mA 180 300 mV Base-Emitter Saturation Voltage * VBE(sat) IC=1A, IB=50mA* 0.85 1.0 V Base-Emitter Turn-On Voltage * VBE(on) IC=1A, VCE=10V* 0.74 1.0 V DC current gain hFE IC=10mA, VCE=10V* 200 400 IC=200mA,VCE=10V 300 450 IC=1A, VCE=10V* 30 45 IC=3A, VCE=10V* Output capacitance Cob Transition frequecy fT 15 VCB=10V,f=1MHz IC=50mA,VCE=10V,f=100MHz 6 100 135 10 pF MHz * Pulse test: tp ≤ 300 μs; d ≤ 0.02. ■ Marking Marking 625 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2