NTR1P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are DC−DC converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. http://onsemi.com V(BR)DSS RDS(on) Max ID Max −20 V 220 mW −1.3 A P−Channel D Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Packages are Available G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage − Continuous VGS ±12 V Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 ms) ID IDM −1.3 −4.0 A A PD 400 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance − Junction−to−Ambient RqJA 300 °C/W TL 260 °C Rating Total Power Dissipation @ TA = 25°C Maximum Lead Temperature for Soldering Purposes, (1/8″ from case for 10 s) S 3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1 2 SOT−23 CASE 318 STYLE 21 P02 M G G 1 Gate 2 Source P02 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NTR1P02LT1 NTR1P02LT1G NTR1P02LT3 NTR1P02LT3G Package Shipping † SOT−23 3000 Tape & Reel SOT−23 (Pb−Free) 3000 Tape & Reel SOT−23 10,000 Tape & Reel SOT−23 (Pb−Free) 10,000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 8 1 Publication Order Number: NTR1P02LT1/D NTR1P02LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min V(BR)DSS −20 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 V, ID = −10 mA) Zero Gate Voltage Drain Current (VDS = −16 V, VGS = 0 V) (VDS = −16 V, VGS = 0 V, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 12 V, VDS = 0 V) IGSS V −1.0 −10 mA ±100 nA −1.0 −1.25 V 0.135 0.190 0.22 0.35 ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = −250 mA) VGS(th) Static Drain−to−Source On−Resistance (VGS = −4.5 V, ID = −0.75 A) (VGS = −2.5 V, ID = −0.5 A) rDS(on) −0.7 W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = −5.0 V) Ciss 225 Output Capacitance (VDS = −5.0 V) Coss 130 Transfer Capacitance (VDG = −5.0 V) Crss 55 td(on) 7.0 tr 15 td(off) 18 tf 20 QT 5500 pF SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = −5.0 V, ID = −1.0 A, RL = 5.0 W, RG = 6.0 W) Fall Time Total Gate Charge (VDS = −16 V, ID = −1.5 A, VGS = −4.0 V) ns pC SOURCE−DRAIN DIODE CHARACTERISTICS IS −0.6 Pulsed Current Continuous Current ISM −0.75 Forward Voltage (Note 2) (VGS = 0 V, IS = −0.6 A) VSD −1.0 Reverse Recovery Time trr 16 ta 11 tb 5.5 QRR 0.0085 (IS = −1.0 A, VGS = 0 V, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 A V ns mC NTR1P02LT1 1.4 VGS = −3 V −2 V −2.8 V 2 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 2.5 TJ = 25°C −2.6 V −1.8 V −2.4 V 1.5 −2.2 V 1 −1.6 V 0.5 0 −1.2 V 0 −1.4 V 1 2 3 4 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 0.8 TJ = 25°C 0.6 0.4 TJ = 100°C 0.2 0 5 VDS ≥ −10 V 1.2 TJ = −55°C 1 1.2 1.4 1.6 1.8 2 2.2 2.4 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0.04 ID = −10 A TJ = 25°C 0.03 0.02 0.01 0 0 2 4 6 8 10 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.3 TJ = 25°C VGS = −2.5 V 0.25 0.2 TJ = 100°C 0.15 TJ = 25°C 0.1 TJ = −55°C 0.05 0 0.2 0.4 0.6 0.7 0.8 0.9 Figure 4. On−Resistance versus Drain Current and Gate Voltage 1000 0.3 VGS = 0 V −IDSS, LEAKAGE (nA) ID = −0.5 A VGS = −2.5 V 0.2 0.1 TJ = 125°C 100 10 TJ = 100°C 1 0.1 0 −50 0.5 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−to−Source Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.3 −25 0 25 50 75 100 125 150 0.01 TJ = 25°C 4 8 12 16 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 1 5000 C, CAPACITANCE (pF) VGS = 0V TJ = 25°C VDS = 0V 4500 4000 3500 3000 Ciss 2500 2000 1500 Coss 1000 Crss 500 0 15 5 5 10 15 20 25 −VGS −VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 0 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTR1P02LT1 6 28 4 12 8 0 0 1 2 3 4 4 0 QG, TOTAL GATE CHARGE (nC) −IS, SOURCE CURRENT (AMPS) t, TIME (ns) tf td(off) td(on) 1 Q2 VDS = −16 V ID = −1.5 A TJ = 25°C 0.8 tr 1 Q1 2 Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge VDD = −16 V ID = −1 A 10 20 16 Figure 7. Capacitance Variation 100 24 QT 10 VGS = 0 V TJ = 25°C 0.6 0.4 0.2 0 1.00E−01 100 3.00E−01 5.00E−01 7.00E−01 9.00E−01 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTR1P02LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E 1 c 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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