A-POWER AP2306AGEN-HF

AP2306AGEN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive
D
▼ Small Outline Package
▼ Surface Mount Device
S
▼ RoHS Compliant & Halogen-Free
SOT-23
BVDSS
30V
RDS(ON)
50mΩ
ID
4.1A
G
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
The SOT-23 package is widely used for commercial-industrial applications.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
30
V
+6
V
3
4.1
A
3
3.3
A
16
A
1.38
W
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
201208081
AP2306AGEN-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=4A
-
-
50
mΩ
VGS=2.5V, ID=3A
-
-
72
mΩ
0.5
-
1.5
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=3A
-
15
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+6V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=3A
-
8.7
14
nC
Qgs
Gate-Source Charge
VDS=15V
-
1.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
65
-
ns
tr
Rise Time
ID=1A
-
130
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
470
-
ns
tf
Fall Time
VGS=5V
-
290
-
ns
Ciss
Input Capacitance
VGS=0V
-
610
1000
pF
Coss
Output Capacitance
VDS=25V
-
60
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.2A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
220
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
600
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2306AGEN-HF
20
16
T A = 25 o C
ID , Drain Current (A)
16
ID , Drain Current (A)
o
TA=150 C
5.0V
4.5V
3.5V
2.5V
12
8
V G = 2.0 V
5.0V
4.5V
3.5V
2.5V
12
8
V G = 2.0 V
4
4
0
0
0.0
2.0
4.0
6.0
8.0
10.0
0.0
2.0
8.0
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
I D =3A
I D =4A
V G =4.5V
T A =25 o C
60
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
6.0
V DS , Drain-to-Source Voltage (V)
70
50
40
1.2
0.8
0.4
30
0
2
4
6
-50
8
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
3.0
1.5
Normalized VGS(th) (V)
4.0
T j =150 o C
50
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
2.0
0
o
V GS , Gate-to-Source Voltage (V)
IS(A)
4.0
V DS , Drain-to-Source Voltage (V)
T j =25 o C
1.0
1.0
0.5
0.0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2306AGEN-HF
f=1.0MHz
8
800
6
600
V DS =15V
V DS =18V
V DS =24V
C (pF)
VGS , Gate to Source Voltage (V)
I D =3A
4
400
2
200
0
0
0.0
4.0
8.0
12.0
C iss
C oss
C rss
1
16.0
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
100us
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1
1ms
10ms
0.1
100ms
1s
DC
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
PDM
t
0.05
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.02
Rthja = 270℃/W
0.01
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Circuit
4