AP2326GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Surface Mount Device
S
▼ Halogen Free & RoHS Compliant Product
SOT-23
BVDSS
30V
RDS(ON)
42mΩ
ID
4.7A
G
D
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
S
The SOT-23 package is widely used for commercial-industrial applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
30
V
+20
V
3
4.7
A
3
3.7
A
20
A
1.38
W
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
200910061
AP2326GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=4A
-
-
42
mΩ
VGS=4.5V, ID=3A
-
-
60
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=3A
-
9
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge2
ID=3A
-
4.3
6.9
nC
Qgs
Gate-Source Charge
VDS=15V
-
1.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2.4
-
nC
VDS=15V
-
5.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
7.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
12
-
ns
tf
Fall Time
RD=15Ω
-
2.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
250
400
pF
Coss
Output Capacitance
VDS=25V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
-
Ω
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
14
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2326GN-HF
20
20
T A = 25 o C
16
ID , Drain Current (A)
ID , Drain Current (A)
16
10V
7.0V
6.0V
5.0V
V G = 4.0V
o
TA=150 C
10V
7.0V
6.0V
5.0V
V G = 4.0V
12
8
4
12
8
4
0
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
1.0
2.0
3.0
4.0
5.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
2.0
I D =3A
I D =4A
V G =10V
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
50
40
1.2
0.8
30
0.4
2
4
6
8
-50
10
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4.0
2.0
3.0
1.5
Normalized VGS(th) (V)
IS(A)
50
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
T j =150 o C
0
o
V GS , Gate-to-Source Voltage (V)
T j =25 o C
2.0
1.0
1.0
0.5
0.0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2326GN-HF
f=1.0MHz
10
400
8
300
C iss
6
C (pF)
VGS , Gate to Source Voltage (V)
I D =3A
V DS =15V
200
4
100
2
C oss
C rss
0
0
2
4
6
8
0
1
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
Operation in this
area limited by
RDS(ON)
10
100us
ID (A)
5
1
1ms
10ms
0.1
100ms
1s
DC
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
PDM
t
0.05
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.02
Rthja = 270℃/W
0.01
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Circuit
4